Rev.6.00 Sep 20, 2005 page 1 of 7
HAT2165H
Silicon N Channel Power MOS FET
Power Switching REJ03G0004-0600
Rev.6.00
Sep 20, 2005
Features
• High speed switching
• Capable of 7 V gate drive
• Low drive current
• High densit y mounting
• Low on-resistance
RDS(on) = 2.5 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
1234
5
1, 2, 3 Source
4 Gate
5 Drain
G
D
SSS
4
123
5
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 30 V
Gate to source voltage VGSS ±20 V
Drain current ID 55 A
Drain peak current ID(pulse)Note1 220 A
Body-drain diode reverse drain current IDR 55 A
Avalanche current IAP Note 2 30 A
Avalanche energy EAR Note 2 90 mJ
Channel dissipation Pch Note3 30 W
Channel to Case Thermal Resistance θch-C 4.17 °C/W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
HAT2165H
Rev.6.00 Sep 20, 2005 page 2 of 7
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS — — 1 µA VDS = 30 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V VDS = 10 V, ID = 1 mA
RDS(on) — 2.5 3.3 mΩ I
D = 27.5 A, VGS = 10 V Note4
Static drain to source on state
resistance RDS(on) — 3.4 5.3 mΩ I
D = 27.5 A, VGS = 4.5 V Note4
Forward transfer admittance |yfs| 60 100 — S ID = 27.5 A, VDS = 10 V Note4
Input capacitance Ciss — 5180 — pF
Output capacitance Coss — 1200 — pF
Reverse transfer capacitance Crss — 380 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Gate Resistance Rg — 0.5 — Ω
Total gate charge Qg — 33 — nC
Gate to source charge Qgs — 15 — nC
Gate to drain charge Qgd — 7.1 — nC
VDD = 10 V, VGS = 4.5 V,
ID = 55 A
Turn-on delay time td(on) — 13 — ns
Rise time tr — 65 — ns
Turn-off delay time td(off) — 60 — ns
Fall time tf — 9.5 — ns
VGS = 10 V, ID = 27.5 A,
VDD ≅ 10 V, RL = 0.36 Ω,
Rg = 4.7 Ω
Body–drain diode forward voltage VDF — 0.81 1.06 V IF = 55 A, VGS = 0 Note4
Body–drain diode reverse recovery
time trr — 40 — ns
IF = 55 A, VGS = 0
diF/ dt = 100 A/ µs
Notes: 4. Pulse test
HAT2165H
Rev.6.00 Sep 20, 2005 page 3 of 7
Main Characteristics
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Gate to Source Voltage V
GS
(V)
Drain to Source Voltage V
DS(on)
(mV)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current I
D
(A)
Drain to Source On State Resistance
R
DS(on)
(mΩ)
Static Drain to Source on State Resistance
vs. Drain Current
100
80
60
40
20
0246810
100
80
60
40
20
01 234 5
Tc = 75°C
25°C
-25°C
40
30
20
10
050 100 150 200
V
DS
= 10 V
Pulse Test
V
GS
= 2.2 V
10 V
4.5 V
2.4 V
2.6 V
2.8 V
3.0 V
Pulse Test
100
10
1
0.1
0.01
0.1 0.3 1 3 10 30 100
500
Tc = 25°C
1 shot Pulse
PW = 10 ms
10 µs
100 µs
Operation in
this area is
limited by R
DS(on)
DC Operation
1 ms
250
200
150
100
50
04 8 12 16 20
Pulse Test
ID
= 50 A
10 A
20 A
10
2
5
1
30 300
110 100 1000
3
V
GS
= 4.5 V
10 V
Pulse Test
HAT2165H
Rev.6.00 Sep 20, 2005 page 4 of 7
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
R
DS(on)
(mΩ)
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
Drain Current I
D
(A)
Switching Time t (ns)
Switching Characteristics
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Dynamic Input Characteristics
8
6
4
2
-25 0 25 50 75 100 125 150
0
ID = 10 A, 20 A
10 A, 20 A, 50 A
VGS = 4.5 V
10 V
Pulse Test
330
0.1 1 10 100
0.3
10
1000
100
30
300
1
0.3
3
0.1
Tc = -25°C
VDS = 10 V
Pulse Test
75°C
25°C
50 A
0 5 10 15 20 25 30
10000
3000
1000
300
100
30
10
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
40
30
20
10
0
16
12
8
4
20 40 60 80 100
0
ID = 55 A VGS
VDS
VDD = 5 V
10 V
25 V
VDD = 25 V
10 V
5 V
0.1 0.3 1 3 10 30 100
100
20
50
10
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
100
300
30
10
0.1 0.2 2 10 1002010.5 5
1000
50
3VGS = 10 V, VDS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
tr
td(on)
td(off)
tf
HAT2165H
Rev.6.00 Sep 20, 2005 page 5 of 7
Source to Drain Voltage VSD (V)
Reverse Drain Current IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
D. U. T
Rg
I
AP
Monitor
V
DS
Monitor
V
DD
50 Ω
Vin
15 V
0
ID
V
DS
I
AP
V
(BR)DS
S
L
V
DD
E
AR
= L • I
AP2
•
2
1V
DSS
V
DSS
– V
DD
Avalanche Test Circuit Avalanche Waveform
Channel Temperature Tch (°C)
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γs (t)
100
80
60
40
20
25 50 75 100 125 150
0
I
AP
= 30 A
V
DD
= 15 V
duty < 0.1 %
Rg ≥ 50 Ω
100
80
60
40
20
00.4 0.8 1.2 1.6 2.0
Pulse Test
5 V V
GS
= 0
10 V
3
1
0.3
0.1
0.03
0.01
10 µ100 µ1 m 10 m 100 m 1 10
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
P
DM
PW
T
D = PW
T
θch - c(t) = γs (t) • θch - c
θch - c = 4.17°C/ W, Tc = 25°C
HAT2165H
Rev.6.00 Sep 20, 2005 page 6 of 7
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
DS
= 10 V
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor 90%
10%
tf
Switching Time Test Circuit Switching Time Waveform
Rg
HAT2165H
Rev.6.00 Sep 20, 2005 page 7 of 7
Package Dimensions
0.25
M
1.3 Max
1.0
3.95
1.1 Max
4.9
5.3 Max
4.0 ± 0.2
14
5
4.2
3.3
0° – 8°
0.07
+0.03
–0.04
0.20
+0.05
–0.03
0.6
+0.25
–0.20
0.25
+0.05
–0.03
6.1
+0.1
–0.3
Package Name
PTZZ0005DA-A LFPAK
MASS[Typ.]
0.080gSC-100
RENESAS CodeJEITA Package Code
1.27
0.40 ± 0.06
0.75 Max
0.10
(Ni/Pd/Au plating)
Unit: mm
Ordering Information
Part Name Quantity Shipping Container
HAT2165H-EL-E 2500 pcs Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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