DPF80C200HB preliminary HiPerFRED VRRM = 200 V I FAV = 2x 40 A t rr = 55 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPF80C200HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a DPF80C200HB preliminary Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 200 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 200 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case typ. VR = 200 V TVJ = 25C 1 A VR = 200 V TVJ = 150C 0.2 mA TVJ = 25C 1.22 V 1.45 V 0.95 V IF = forward voltage drop min. 40 A IF = 80 A IF = 40 A IF = 80 A TVJ = 150 C TC = 145C rectangular 1.20 V T VJ = 175 C 40 A TVJ = 175 C 0.67 V d = 0.5 for power loss calculation only 5.8 m 0.7 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = 100 V f = 1 MHz TVJ = 25C 81 pF I RM max. reverse recovery current TVJ = 25 C 6 A t rr reverse recovery time IF = IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved K/W 0.25 TC = 25C 40 A; VR = 100 V -di F /dt = 200 A/s 215 560 W A TVJ = 125C 11 A TVJ = 25 C 55 ns TVJ = 125C 85 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a DPF80C200HB preliminary Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 175 C -55 150 C 150 C 1) Weight 6 MD mounting torque FC mounting force with clip Product Marking 0.8 1.2 Nm 20 120 N Part number D P F 80 C 200 HB IXYS Logo g = = = = = = = Diode HiPerFRED ultra fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-247AD (3) XXXXXXXXX Part No. Zyyww Assembly Line abcd Assembly Code Date Code Ordering Standard Part Number DPF80C200HB Similar Part DPF60C200HJ Equivalent Circuits for Simulation I V0 R0 Marking on Product DPF80C200HB Package ISOPLUS247 (3) * on die level Delivery Mode Tube Code No. 508214 Voltage class 200 T VJ = 175 C Fast Diode V 0 max threshold voltage 0.67 V R 0 max slope resistance * 3.2 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a DPF80C200HB preliminary Outlines TO-247 A E A2 O P1 OP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 b4 3x b C A1 2x e 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 OP Q S b b2 b4 c D1 D2 E1 O P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a