AMERICAN POWER DEVICES SSE D Mi 0737135 0000053 Tha MBAPD 7-09 american ELI Power devices, inc. 1N6082B-1N6091B Standard tolerances are 5% 20%, 10%, 2% and 1% are available 400 mW low voltage avalanche low noise silicon zener diodes FEATURES Controlled avalanche . Voltages fropm 4.3 to 10 V Low reverse leakage Low noise Hermetically sealed glass package APD can select any voltage in tolerances 1%, 2%, 5% and 10% at your application's test current. eee @ @ e@ ese ELECTRICAL CHARACTERISTICS @ 25C MAXIMUM RATINGS Junction Temperature -65C to + 175C Storage Temperature -65C to + 200C DC Power Dissipation: 400mW @ T, = 50C Derate above 50C: 2.67mW/C Nominal Maximum Maximum Maximum | Maximum Regulation Zener Impedance (2) Reverse Leakage | Noise Density Type | vonage @! @ 250 pA th Os! & L 1, @, a Av, be Vde Q mA BA Vide pVvAz- Vde mA 4IN6082B 43 18 20 2.0 415 1 0.75 2.0 1IN6083B 47 10 410 2.0 2.0 41 0.50 1.0 1N6084B 5.1 10 5 2.0 3.0 1 9.30 0.25 iN6085B 56 49 1 2.0 45 1 0.10 0.05 IN6086B 6.2 45 1 0.5 5.6 1 0.10 0.01 1N6087B 68 50 1 0.05 6.2 1 0.70 0.01 IN608BB 75 50 1 0.04 6.8 1 0.10 0.01 1N6089B &2 60 1 0.01 75 1 0.10 0.01 4+NG60SOB 3.1 60 1 0.01 8.2 2 0.10 0.01 1N60918 10.0 60 1 0.01 9.1 2 0.10 0.01 Note 1 The JEDEC type numbers shown with a B suffix have a +5% tolerance. No suffix indicates a +20% tolerance. Suffix A denotes a +10% tolerance, suffix C denotes a +2% tolerance and suffix D denotes +1% tolerance. Note 2 The zener impedance is derived from the 60 Hz ac voltage, which results when an ac current having an rms value equal to 10% of the DC zener current {,,) is superimposed on !,,. Note 3 Measured from 1 KHz to 3 KHz in noise density measurement circuit shown on the following page. MECHANICAL CHARACTERISTICS $090 MAX | 229 (DIA 1090 MIN 0 wi 2.200 ax | BOLERO DIA 9 be BB all dimensions In INCH mm MIN FIGURE 1 CASE: Hermetically sealed glass package (DO-35) FINISH: Corrosion resistant. Leads are tin plated. THERMAL RESISTANCE: 200C/W junction to lead at 0.375-inches from body. POLARITY: Cathode banded. WEIGHT: 0.2 grams (typ). This series also available in DO-7 package. Consult factory for availability. Pg. MAXIMUM POWER DISSIPATION (mw? 25 5D oh) 100 125 150 75 200 T,, Lead temperature (C) Me" trom pody Figure 2 POWER DERATING 69 bennet sireet. lvnn. ma 01905-3067 tel.: 617 592-6090 + fax: 617 592-0677AMERICAN POWER DEVICES S9E D M@@ 0737135 0000054 4T4 MMAPD . 1N6082B-1N6091B american . Standard tolerances are 5% mahi Power devices, inc. 20%, 10%, 2% and 1% are available Noise Density A zener diode produces noise when biased in the reverse mode. The most significant portion of the noise is caused by the zener breakdown and is referred to as microplasma AMMETER LOAD AMPLIFIER . . . . RESISTOR or white noise. The higher frequencies can be +o }w FUER [TT] true eliminated by the use of a shunt capacitor. However the DC POWER - fo = 2.0 KH RMS : . . SUPPLY TEST ZENER 4 V2 tzgoun | | var} lower frequencies can not be removed without a serious -o i Bw= 2 aie |_t | METER degradation in zener performance. y, DISE DENSITY (VOLTS PER SQUARE ROOT BANDWIDTH) = = #___. . . . . NEES ES TEENS NON Sea Ga EY- Noise density (ND) in microvolts-rms per square-root-hertz Mae eee OUIEUT NOt OL aMS) decreases as zener current increases. The measurement of ND can be made with a circuit as shown in Figure 3. Measurement is performed using a 1 KHz to 3 KHz frequency bandpass filter at a constant zener test current Figure 3 NOISE DENSITY MEASUREMENT CIRCUIT (i,,) at 25C ambient temperature. 69 bennett street, lynn, ma 01905-3067 tel.: 617 592-6090 fax: 617 592-0677