AONR21307 30V P-Channel MOSFET General Description Product Summary * Latest advanced trench technology * Low RDS(ON) * High Current Capability * RoHS and Halogen-Free Compliant ID (at VGS=-10V) VDS Applications -30V -24A RDS(ON) (at VGS=-10V) < 11m RDS(ON) (at VGS=-4.5V) < 18.5m 100% UIS Tested 100% Rg Tested * Notebook AC-in load switch * Battery protection charge/discharge DFN 3x3_EP Bottom View Top View Top View PIN1 D 1 8 2 7 3 6 4 5 G S Pin 1 Orderable Part Number Package Type Form Minimum Order Quantity AONR21307 DFN 3x3 EP Tape & Reel 5000 Absolute Maximum Ratings TA=25C unless otherwise noted Symbol VDS Parameter Drain-Source Voltage Gate-Source Voltage VGS TC=25C Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH TC=25C Power Dissipation B TC=100C Power Dissipation A TA=70C C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: September 2017 IAS 33 A EAS 54 mJ 28 Steady-State Steady-State W 11 5.0 RJA RJC W 3.2 TJ, TSTG Symbol t 10s A -14 PDSM Junction and Storage Temperature Range A -17 PD TA=25C V -82 IDSM TA=70C 25 -24 IDM TA=25C Units V -24 ID TC=100C Maximum -30 -55 to 150 Typ 20 45 3.7 www.aosmd.com Max 25 55 4.5 C Units C/W C/W C/W Page 1 of 6 AONR21307 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250A, VGS=0V -30 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=25V Gate Threshold Voltage VDS=VGS, ID=-250A -1 TJ=55C Static Drain-Source On-Resistance gFS Forward Transconductance VDS=-5V, ID=-17A VSD Diode Forward Voltage IS=-1A, VGS=0V IS Maximum Body-Diode Continuous Current G TJ=125C VGS=-4.5V, ID=-13A DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz f=1MHz Units A -5 -1.3 VGS=-10V, ID=-17A RDS(ON) Max V VDS=-30V, VGS=0V IDSS Coss Typ 100 nA -1.8 -2.3 V 9.2 11 12.7 15.2 14.7 18.5 43 -0.7 m m S -1 V -24 A 1995 pF 300 pF 260 pF 4.5 9 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 35 50 nC Qg(4.5V) Total Gate Charge 17 25 nC VGS=-10V, VDS=-15V, ID=-17A Qgs Gate Source Charge 5.7 nC Qgd Gate Drain Charge 8.8 nC tD(on) Turn-On DelayTime 11 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-17A, di/dt=500A/s VGS=-10V, VDS=-15V, RL=0.9, RGEN=3 Turn-Off Fall Time IF=-17A, di/dt=500A/s 7.5 ns 43.5 ns 17.5 ns 13.3 ns nC 20 A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA t 10s and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150C. D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: September 2017 www.aosmd.com Page 2 of 6 AONR21307 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 -10V VDS=-5V -4.5V 80 60 -4V -ID (A) -ID (A) 60 80 40 40 125C -3.5V 20 20 25C VGS=-3V 0 0 0 1 2 3 4 0 5 2 3 4 5 6 -VGS (Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Figure 1: On-Region Characteristics (Note E) 25 Normalized On-Resistance 1.6 20 RDS(ON) (m) 1 VGS=-4.5V 15 10 VGS=-10V 5 VGS=-10V ID=-17A 1.4 1.2 VGS=-4.5V ID=-13A 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 40 1.0E+01 ID=-17A 1.0E+00 125C 1.0E-01 -IS (A) RDS(ON) (m) 30 125C 20 1.0E-02 25C 1.0E-03 10 25C 1.0E-04 0 1.0E-05 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: September 2017 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AONR21307 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3000 VDS=-15V ID=-17A 2500 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 2 2000 1500 1000 Coss 500 Crss 0 0 0 10 20 30 40 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 400 100.0 10s 10s 100s 1ms 10ms DC 1.0 TJ(Max)=150C TC=25C 300 Power (W) RDS(ON) limited 10.0 -ID (Amps) 5 200 100 0.1 TJ(Max)=150C TC=25C 0.0 0.01 0.1 1 10 -VDS (Volts) -VGS> or equal to -4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJC=4.5C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: September 2017 www.aosmd.com Page 4 of 6 AONR21307 Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 25 25 Current rating -ID (A) 20 15 10 5 20 15 10 0 5 0 0 25 50 75 100 125 150 0 25 TCASE (C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (C) Figure 13: Current De-rating (Note F) 10000 TA=25C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=55C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: September 2017 www.aosmd.com Page 5 of 6 AONR21307 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC Qgd + + DUT Qgs Vds VDC Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs - DUT Vgs VDC td(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: September 2017 Vgs L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 6 of 6