AONR21307
General Description Product Summary
V
DS
I
D
(at V
GS
=-10V) -24A
R
DS(ON)
(at V
GS
=-10V) < 11mΩ
R
DS(ON)
(at V
GS
=-4.5V) < 18.5mΩ
Applications
100% UIS Tested
100% Rg Tested
Symbol
V
DS
V
GS
I
DM
I
AS
Avalanche energy L=0.1mH
C
E
AS
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
• Notebook AC-in load switch
• Battery protection charge/discharge
Power Dissipation
B
11
T
C
=100°C P
D
-30
28
Gate-Source Voltage
Pulsed Drain Current
C
-24
Parameter
Drain-Source Voltage
Continuous Drain
Current
G
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
3.7
55
4.5
V
A
Absolute Maximum Ratings T
A
±25
V
Maximum Units
AONR21307 DFN 3x3 EP Tape & Reel 5000
W
I
D
A33
A
-82
I
DSM
-14
mJ54
-17
-24
Maximum Junction-to-Ambient
A
°C/W
R
θJA
20
45
25
Thermal Characteristics
Parameter Max
T
A
=70°C 3.2
°C
Units
Junction and Storage Temperature Range -55 to 150
Typ
P
DSM
W
T
A
=25°C 5.0
Power Dissipation
A
T
A
=25°C
T
A
=70°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
Avalanche Current
C
Continuous Drain
Current
30V P-Channel MOSFET
Orderable Part Number Package Type Form Minimum Order Quantity
-30V
• Latest advanced trench technology
• Low R
DS(ON)
• High Current Capability
• RoHS and Halogen-Free Compliant
G
D
S
Top View
1
2
3
4
8
7
6
5
DFN 3x3_EP
Top View Bottom View
Pin 1
PIN1
Rev.1.0: September 2017
www.aosmd.com Page 1 of 6
AONR21307
Symbol Min Typ Max Units
BV
DSS
-30 V
V
DS
=-30V, V
GS
=0V -1
T
J
=55°C -5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage -1.3 -1.8 -2.3 V
9.2 11
T
J
=125°C 12.7 15.2
14.7 18.5 mΩ
g
FS
43 S
V
SD
-0.7 -1 V
I
S
-24 A
C
iss
1995 pF
C
oss
300 pF
C
rss
260 pF
R
g
4.5 9 Ω
Q
g
(10V) 35 50 nC
Q
g
(4.5V) 17 25 nC
Q
gs
5.7 nC
Q
gd
8.8 nC
t
D(on)
11 ns
t
r
7.5 ns
t
D(off)
43.5 ns
t
f
17.5 ns
t
rr
13.3 ns
Q
rr
20 nC
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=-15V, f=1MHz
V
DS
=V
GS,
I
D
=-250µA
Output Capacitance
Forward Transconductance
I
S
=-1A, V
GS
=0V
V
DS
=-5V, I
D
=-17A
V
GS
=-10V, I
D
=-17A
V
DS
=0V, V
GS
=±25V
Maximum Body-Diode Continuous Current
G
Input Capacitance
Gate-Body leakage current
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
I
F
=-17A, di/dt=500A/µs
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-15V, R
L
=0.9Ω,
R
GEN
=3Ω
Diode Forward Voltage
DYNAMIC PARAMETERS
V
GS
=-4.5V, I
D
=-13A
I
F
=-17A, di/dt=500A/µs
Turn-On Rise Time
Gate Source Charge
Gate Drain Charge
Total Gate Charge
SWITCHING PARAMETERS
Turn-On DelayTime
mΩ
V
GS
=-10V, V
DS
=-15V, I
D
=-17A
Total Gate Charge
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Gate resistance f=1MHz
I
DSS
µAZero Gate Voltage Drain Current
Drain-Source Breakdown Voltage I
D
=-250µA, V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev.1.0: September 2017 www.aosmd.com Page 2 of 6
AONR21307
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
100
0123456
-ID (A)
-VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
0
5
10
15
20
25
0 5 10 15 20 25 30
RDS(ON) (mΩ)
-ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
-IS(A)
-VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
25°C
125°C
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=-4.5V
ID=-13A
VGS=-10V
ID=-17A
0
10
20
30
40
2 4 6 8 10
RDS(ON) (mΩ)
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
VDS=-5V
VGS=-4.5V
VGS=-10V
ID=-17A
25°C
125°C
0
20
40
60
80
100
012345
-ID(A)
-VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
VGS=-3V
-3.5V
-4.5V
-10V
-4V
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AONR21307
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
100
200
300
400
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0
2
4
6
8
10
0 10 20 30 40
-VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
500
1000
1500
2000
2500
3000
0 5 10 15 20 25 30
Capacitance (pF)
-VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Coss
C
rss
VDS=-15V
ID=-17A
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
DM
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
-ID(Amps)
-VDS (Volts)
-VGS> or equal to -4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10µs
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100µs
10ms
RθJC=4.5°C/W
Rev.1.0: September 2017 www.aosmd.com Page 4 of 6
AONR21307
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
DM
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
5
10
15
20
25
30
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°C)
Figure 12: Power De-rating (Note F)
0
5
10
15
20
25
30
0 25 50 75 100 125 150
Current rating -ID (A)
TCASE (°C)
Figure 13: Current De-rating (Note F)
1
10
100
1000
10000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
TA=25°C
RθJA=55°C/W
Rev.1.0: September 2017 www.aosmd.com Page 5 of 6
AONR21307
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
Vdd
Vgs
Id
Vgs
Rg
DUT
VDC
Vgs
Vds
Id
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
L
-
+
2
E = 1/2 LI
AR
AR
BV
DSS
I
AR
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
-Isd
-Vds
F
-I
-I
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
tt
t
90%
10%
r
on
d(off)
f
off
d(on)
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