Power Module 1200V 300A IGBT Module MG12300D-BA1MM RoHS (R) Features * Ultra low loss * P ositive temperature coefficient * High ruggedness * W ith fast free-wheeling diodes * H igh short circuit capability Applications * SMPS and UPS * Converter * Induction heating * Welder Agency Approvals AGENCY * Inverter AGENCY FILE NUMBER E71639 Module Characteristics (TC = 25C, unless otherwise specified) Symbol Parameters Test Conditions Max Unit Junction-to-Case Thermal Resistance Per IGBT 0.07 K/W Per Inverse Diode 0.15 K/W Torque Module-to-Sink Recommended (M6) 3 5 N*m Torque Module Electrodes Recommended (M6) 2.5 5 N*m RthJC RthJCD Weight Min Typ 285 g Values Unit V Absolute Maximum Ratings (TC = 25C, unless otherwise specified) Symbol Parameters Test Conditions IGBT VCES Collector - Emitter Voltage 1200 VGES Gate - Emitter Voltage 20 V 450 A A IC TC=25C DC Collector Current ICpuls Pulsed Collector Current TC=80C 310 TC=25C, tp=1ms 900 TC=80C, tp=1ms 620 A Ptot Power Dissipation Per IGBT 1800 W TJ Junction Temperature Range -40 to +150 C TSTG Storage Temperature Range -40 to +125 C Visol Insulation Test Voltage 3000 V AC, t=1min Diode VRRM Repetitive Reverse Voltage IF(AV) V 380 A TC=80C 260 A 380 A TJ =45C, t=10ms, Sine 2260 TJ =45C, t=8.3ms, Sine 2560 Average Forward Current RMS Forward Current IF(RMS) IFSM 1200 TC=25C Non-Repetitive Surge Forward Current A Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG12300D-BA1MM 102 1 (c)2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:07/21/16 Power Module 1200V 300A IGBT Module Electrical and Thermal Specifications (TC = 25C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=12mA 5.0 6.2 7.0 V Collector - Emitter Saturation Voltage IC=300A, VGE=15V, TJ=25C 1.9 IC=300A, VGE=15V, TJ=125C 2.1 VCE=1200V, VGE=0V, TJ=25C 0.4 IGBT VGE(th) VCE(sat) ICES Collector Leakage Current IGES Gate Leakage Current VCE=0V,VGE=20V Qge Gate Charge VCC=600V, IC=300A , VGE=15V Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE=1200V, VGE=0V, TJ=125C tr Rise Time td(off) Turn - off Delay Time VCE=25V, VGE=0V, f =1MHz Fall Time Eon Turn - on Energy Eoff Turn - off Energy 10 -400 mA mA 400 3060 nA nC 1.42 nF 0.94 VCC=600V IC=300A RG =3.4 tf V 2 21.2 Turn - on Delay Time td(on) V VGE=15V Inductive Load TJ =25C 190 ns TJ =125C 220 ns TJ =25C 60 ns TJ =125C 60 ns TJ =25C 460 ns TJ =125C 530 ns TJ =25C 55 ns TJ =125C 75 ns TJ =25C 22.4 mJ TJ =125C 33.4 mJ TJ =25C 19.6 mJ TJ =125C 30.6 mJ Diode VF Forward Voltage trr Reverse Recovery Time IRRM Max. Reverse Recovery Current Qrr Reverse Recovery Charge MG12300D-BA1MM IF=300A , VGE=0V, TJ =25C 2.0 2.44 IF=300A , VGE=0V, TJ =125C 1.7 2.20 IF=300A , VR=800V diF/dt=-1000A/s TJ =125C 410 2 103 V V ns 120 A 25 C (c)2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:07/21/16 Power Module 1200V 300A IGBT Module Figure 1: Typical Output Characteristics Figure 2: T ypical Transfer characteristics 600 600 500 500 400 TJ =25C IC (A) IC (A) 400 300 TJ =125C 200 300 200 TJ =125C 100 0 0 1 0.5 1.5 2.5 2 VCE(sat)V 3.5 3 0 4 6 8 VGEV 10 12 14 100 VCC=600V RG=3.4ohm VGE=15V TJ =125C 80 Eon 100 VCC=600V IC=300A VGE=15V TJ =125C 60 Eon Eoff (mJ) Eon Eoff (mJ) 2 0 Figure 4: Switching Energy vs. Gate Resistor 250 150 TJ =25C 100 Figure 3: Switching Energy vs. Collector Current 200 VCE=20V Eon 40 Eoff Eoff 50 20 0 0 200 400 600 ICA 800 0 1000 Figure 5: Switching Times vs. Collector Current 0 5 15 10 RGohm 20 25 Figure 6: S witching Times vs. Gate Resistor 4 103 10 td(off) 103 102 td(off) t (ns) t (ns) td(on) tr tf 101 0 MG12300D-BA1MM 120 180 240 ICA 300 360 tf 102 VCC=600V RG=3.4ohm VGE=15V TJ =125C 60 td(on) 101 420 104 3 tr 0 VCC=600V IC=300A VGE=15V TJ =125C 5 10 15 20 25 RGohm 30 35 (c)2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:07/21/16 Power Module 1200V 300A IGBT Module Figure 7: Gate Charge characteristics Figure 8: Typical Capacitances vs. VCE 25 100 VGE =0V f=1MHz VCC=600V IC=300A TJ =25C 20 Cies 10 C (nF) VGE (V) 15 10 Coes 1 Cres 5 0 0 0.8 1.2 QgC 0.4 1.6 0.1 2.0 10 15 20 25 30 35 Figure 10: Short Circuit Safe Operating Area 6000 1000 5000 800 4000 ICsc (A) 1200 600 3000 400 2000 TJ =150C TC =25C VGE =15V 200 0 0 200 400 TJ =150C TC =25C VGE =15V tsc10s 1000 0 600 800 1000 1200 1400 VCEV Figure 11: Rated Current vs. TC 0 200 400 600 800 1000 1200 1400 VCEV Figure 12: D iode Forward Characteristics 600 600 TJ =150C VGE i15V 500 500 400 400 300 300 TJ =125C IF (A) IC(A) 5 VCEV Figure 9: Reverse Biased Safe Operating Area ICpuls (A) 0 200 200 100 100 TJ =25C 0 0 MG12300D-BA1MM 25 0 50 75 100 125 150 175 TC Case Temperature(C) 4 105 0 0.5 1.0 1.5 2.0 2.5 VFV 3 3.5 (c)2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:07/21/16 Power Module 1200V 300A IGBT Module Figure 13: Transient Thermal Impedance of IGBT Figure 14: Transient Thermal Impedance of Diode 1 1 -1 -1 10 Duty 0.5 0.2 0.1 0.05 Single Pulse -2 10 ZthJC (K/W) ZthJC (K/W) 10 Duty 0.5 0.2 0.1 0.05 Single Pulse -2 10 10-3 10-3 10-4 -4 -3 -2 -1 10 10 10 10 1 Rectangular Pulse Duration (seconds) 10-4 -4 10 10-3 10-2 10-1 1 Rectangular Pulse Duration (seconds) Dimensions-Package D Circuit Diagram 2.8x0.5 1 3 3-M6 MG12300D-BA1MM 2 4 5 106 5 6 7 (c)2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:07/21/16 Power Module 1200V 300A IGBT Module Packing Options Part Number Marking Weight Packing Mode M.O.Q MG12300D-BA1MM MG12300D-BA1MM 285g Bulk Pack 60 Part Marking System Part Numbering System MG12300 D - B A1 MM PRODUCT TYPE M: Power Module ASSEMBLY SITE 1 3 2 WAFER TYPE MODULE TYPE G: IGBT VOLTAGE RATING 12: 1200V CIRCUIT TYPE 2x(IGBT+FWD) CURRENT RATING PACKAGE TYPE 4 MG12300D-BA1MM 5 6 7 LOT NUMBER 300: 300A MG12300D-BA1MM 6 107 (c)2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:07/21/16