N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 2N7000P ISSUE 2 - MARCH 94 FEATURES * 60 Volt VCEO * RDS(on) = 5 D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb=25C ID 200 mA Pulsed Drain Current I DM 500 mA Gate-Source Voltage V GS 40 V Power Dissipation at T amb=25C P tot 400 mW Operating and Storage Temperature Range T j:T stg -55 to +150 C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage V GS(th) 0.8 Gate-Body Leakage MAX. UNIT CONDITIONS. V I D=10A, V GS=0V 3 V ID=1mA, V DS= V GS I GSS 10 nA V GS= 15V, V DS=0V Zero Gate Voltage Drain Current I DSS 1 1 A mA V DS=48V, V GS=0 V DS=48V, V GS=0V, T=125C (2) On-State Drain Current(1) I D(on) mA V DS=10V, V GS=4.5V Static Drain-Source On-State Voltage (1) V DS(on) 2.5 0.4 V V V GS=10V,I D=500mA V GS=4.5V,I D=75mA Static Drain-Source On-State Resistance (1) R DS(on) 5 V GS=10V,I D=500mA mS V DS=10V,I D=200mA Forward Transconductance(1)(2 g fs ) 75 100 Input Capacitance (2) C iss 60 pF Common Source Output Capacitance (2) C oss 25 pF Reverse Transfer Capacitance (2) C rss 5 pF 3-13 V DS=25V, V GS=0V, f=1MHz