N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 60 Volt VCEO
*R
DS(on) = 5 Ω
ABSOLUTE MAXI MUM RATI NGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 60 V
Continuous D rain Current at Tamb=25°C ID200 mA
Pulsed Drain Current IDM 500 mA
Gate-Source Voltage VGS ± 40 V
Power Dissipa tion at Tamb=25°C Ptot 400 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRIC AL CH AR ACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BVDSS 60 V ID=10µA, VGS=0V
Gate-Source Threshold
Voltage VGS(th) 0.8 3 V ID=1mA, VDS= VGS
Gate-Body Leakage IGSS 10 nA VGS=± 15V, VDS=0V
Zero Ga te Voltage Drain
Current IDSS 1
1µA
mA VDS=48V, VGS=0
VDS=48V, VGS=0V, T=125°C(2)
On-State Drain Current(1) ID(on) 75 mA VDS=10V, VGS=4.5V
Static Drain-Source On-State
Voltage (1) VDS(on) 2.5
0.4 V
VVGS=10V,ID=500mA
VGS=4.5V,ID=75mA
Static Drain-Source On-State
Resistance (1) RDS(on) 5ΩVGS=10V,ID=500mA
Forward Transconductance(1)(2
)gfs 100 mS VDS=10V,ID=200mA
Input Capacitance (2) Ciss 60 pF
Common Source O utput
Capacitance (2) Coss 25 pF VDS=25V, VGS=0 V, f= 1MHz
Reverse Transfer Capacitance
(2) Crss 5pF
E-Line
TO92 Compatible
2N7000P
3-13
D
G
S
