SCHOTTKY DIE SPECIFICATION TYPE: MBR8100
100 V 8 A ( Low Ir) Single Anode
SYM Die Sort UNIT
DC Blocking Voltage: Ir=1mA(for wafer form) VRRM 105 Volt
Ir=0.5mA (for dice form) IFAV Amp
VF MAX 0.88 Volt
IR MAX 0.09 mA
Cj MAX pF
IFSM Amp
Tj °C
TSTG °C
Specification apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjecedt to change without notice.
DIM um2Mil2
A2220 87.40
B2120 83.5
C2140 84.3
D254 10
305 12
Micro-Electro-Magnetical Tech Co.
Spec. Limit
100
8
Thickness (Max)
0.1
Top Metal Pad Size
Passivation Seal
Thickness (Min)
PS:
(1)Cutting street width is around 80um(3.14mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
General Description:
150
-65 to +125
-65 to +125
0.89 @ 8 Amperes, Ta=25°C
Maximum Instantaneous Reverse Voltage
VR= 100 Volt, Ta=25°C
ELECTRICAL CHARACTERISTICS
Average Rectified Forward Current
Maximum Instantaneous Forward Voltage
Maximum Junction Capacitance @ 0V, 1MHZ
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current
Operating Junction Temperature
Storage Temperatures
ITEM
Die Size
DICE OUTLINE DRAWING
B
C
A
Top-side Metal
DSiO2 Passivation
P+ Guard Ring
Back-side Metal
