NES130/5 G B PNEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL : 8 AMPERE REPETITIVE AVALANCHE RATINGS 100 VOLTS LOW Rps(on) 0 18 Q e =LOW DRIVE REQUIREMENT DYNAMIC dv/dt RATING ABSOLUTE MAXIMUM RATINGS (T; = 25C unless otherwise noted) PARAMETERS / TEST CONDITIONS SYMBOL VALUE UNITS Drain-Source Voltage Vos 100 Vv Gate-Source Voltage Ves +20 Vv Continuous Drain Current | To = 25C Ip 8.0 A Pulsed Drain Current (1) Ipw 32 A Power Dissipation | To = 25C Pp 25 Ww Operating Junction & Storage Temperature Range Ty Top -55 to + 150 "C Lead Temperature (1/16" from case for 10 secs.) T;, 300 "C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYP. MAX. UNITS Junction-to-Case Ryuc 5.0 K/W Junction-to-Ambient Raya 175 K/W (1)Pulse width linited by maximum junction temperature. MECHANICAL OUTLINE eee 1S" nn PIN OUT: 0.250 tr S PIN 1: SOURCE 00.335" #0.30S* |g PIN 2: GATE nin. min. PIN 3: DRAIN None 0.100" 90021 "YP 3 noige O16 0.016 0.050" max. 0.100 typ. 0.200 typ. 6 Lake Street Lawrence,MA 01841 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 T4-4.8860-918 REV:-- NEW ENGLAND SEMICONDUCTORNES130/5 u B FNEW ENGLAND SEMICONDUCTOR ELECTRICAL CHARACTERISTICS (T, = 25'C unless otherwise noted) PARAMETERS / TEST CONDITIONS SYMBOL MIN. TYP. MAX. | UNITS Drain-Source Breakdown Voltage Vos = OV, Ip = 250 LA Vierypss 100 Vv Gate Threshold Voltage Vps_ = Ves Ip = 250 nA Vesam 2.0 4.0 Vv Gate-Body Leakage Vog = At Rated Vex loss +100 nA Zero Gate Voltage Drain Current Vps = 0.8 max Rating Ves = 0V pss 250 HA Zero Gate Voltage Drain Current Vps = 80% Vepeypss, Vos = 0V, Ty = 125C Ipss 1000 HA Drain-Source On-State Resistance (2) - Vos = 10 V, Ip = 60% Rated Ip Ds(on) 0.18 Q Forward Transconductance (2) Vps = 15 V, Ip = 60% A (Vps 2 Ipen X Roscony Max) ote 46 (Q) Input Capacitance Veg = OV Ciss 650 Output Capacitance Vps = 25 V Coss 240 pF Reverse Transfer Capacitance f = 1.0 MHz C 44 TSS Total Gate Charge Vos = 80 %Vigpynss Q, 26 Ves = 10V, Gate-Source Charge (Gate charge is essentially Qs 5.5 nC independent of operating Gate -Drain Charge temperature.) Qua ia g Tum-On Delay Time Vag = S0%V, Ip = 50%A, d(on) 14 Rise Time Rg = 122 ' ns r 63 Turn-Off Delay Time (Switching time is 'd(off) 33 essentially independent of Fall Time operating temperature.) 38 SOURCE-DRAIN DIODE RATINGS & CHARACTERISTICS (T, = 25C _ unless otherwise noted) PARAMETERS / TEST CONDITIONS SYMBOL | MIN. TYP. MAX | UNITS Continuous Current Is 8.0 A Pulsed Current (1) Iso 32 A Forward Voltage (2) I; = Is, Vos = OV Vsp 2.5 Vv Reverse Recovery Time Ip = Is, dI/dt = 100 A/uS, Vpp = 50 v tr 250 ns Reverse Recovered Charge I; = Is, dI/dt = 100 A/uS, Vpp = 50 v Qn 1.3 uc (1)Pulsed width limited by maximum junction temperature. (2)Pulse Test: Pulse width < 300 usec. Duty cycel < 2%. 6 Lake Street Lawrence,MA 01841 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 T4-4.8860-918 REV:-- NEW ENGLAND SEMICONDUCTOR