SILICON HOMETAXIAL* NPN 2N 3442/BDX Tl 2N 4347/BDX 12 HIGH POWER HIGH VOLTAGE APPLICATIONS The 2N 3442/BDX 11 and 2N 4347/BDX 12 are high voltage, hometaxial NPN tran- sistors in Jedec TO-3 metal case. They are intended for use as power switches, re- gulators, de-de converters, inverters and audio amplifiers. * Hometaxial types employ a structure in which the base region has homogeneous resistivity silicon material in the axial direction (emitter-to-collector). ABSOLUTE MAXIMUM RATINGS 2N 4347 | 2N 3442 Veso Collector-base voltage (I, = 0) 140 V 160 V Veev(sus) Collector-emitter voltage (Vae = -1.5 V) 140 V 160 V > Vcer(sus) Collector-emitter voltage (Rp. < 100 92) 130 V 150 V Veeo(sus) Collector-emitter voltage (!, = 0) 120 V 140 V Vepo Emitter-base voltage (I, = 0) 7V le Collector current 10A lem Collector peak current (repetitive) 15A Ig Base current 7A Prot Total power dissipation atT,< 25C for 2N 3442 117W for 2N 4347 100 W Tytg Storage temperature -65 to 200 C T; Junction temperature 200 C MECHANICAL DATA Dimensions in mm Collector connected to case 10.9 gm 1 $ | c bp J. e = ty 3 5 at | ba 3 t in EFF S gS] o \ . 4.2 _ |_ _4.0 26.23 10m -o0008/1 (sim. to TO-3) Supersedes issue dated 2/73 157 3/752N 3442/BDX fl 2N 4347/BDX 12 THERMAL DATA R Thermal resistance junction-case for 2N 3442 max 15 oC/W for 2N 4347 max 1.75 C/W th jr ELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise specified) Parameter Test conditions Min. Typ. Max. |Unit lego Collector cutoff current (l_ = 0) Veg = 140V 1; mA (for 2N 3442 only) leey Collector cutoff for 2N 3442 current (Vee = -1.5V) | Veg = 140 V 1) mA Veep = 140V TT. = 150C 10|mA for 2N 4347 Vee = 120V 2|mA Veg = 120V T. = 150C 10} mA leso Emitter cutoff current (I, = 0) Veg = 7V 5)mA Veey (sus) Collector-emitter voltage (Vp- =-1.5V) ||, = 100mA for 2N 3442 | 160 Vv for 2N 4347 | 140 V Ver (sus) Collector-emitter voltage (Ra, = 1002) jl, = 100mA for 2N 3442 | 150 V for 2N 4347 | 130 Vv Veeo(susy Collector-emitter voltage (I, = 0) Ic = 200mA for 2N 3442 | 140 V for 2N 4347 | 120 V ! Veecsaty Collector-emitter for 2N 3442 saturation voltage Il =3A lz =O03A 1| Vv for 2N 4347 Ik =2A Ip =O02A 1] Vv 1582N 3442/BDX fl ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions Min. Typ. Max. |Unit Vee" Base-emitter voltage for 2N 3442 IL =3A Vee = 4V 17) Vv for 2N 4347 IL =2A Vee = 4V 2/ Vv hee DC current gain for 2N 3442 Gr 44 lk =O05A VaE=4V 20 50 | Gr. 5) l- =O5A Ve =4V 35 75 | Gr. 6) - =O05A VeE=4V 60 145 | Gr. 7) lp =O5A Voge =4V_ | 120 250 | lc =3A Vee = 4V 20 70 | for 2N 4347 IL =2A Vee = AV 20 70) bre Neem Matched pair le =0.5A Moe =4V 16 | (for 2N 3442 only) Ijo* Second breakdown collector current Vee = 78V_ for 2N 3442 1.5 A Vce = 67V_ for 2N 4347 1.5 A * * Pulsed: 1s, non repetitive pulse Pulsed: pulse duration = 30 ps, duty factor = 1.5 %/o 1592N 3442/BDX fl 2N 4347/BDX 12 Safe operating areas (for 2N 3442 only) I G-0283/1 c *FOR SINGLE NON (A) REPETITIVE PULSE I MAX (PULSED) *PULSE OPERATION 10 Ic MAX(CONTIN TI ims 100y 50u 30 10 ys 1 Is/p LIMITED o MAX=140 10" 1 10 10? Vee (Vv) 1602N 3442/BDX fl 2N 4347/BDX 12 Typical DC transconductance Reverse-bias second breakdown characteristics INDUCTANCE (L)=200 21009) aye, Ree, (Ree? m (Rge=100 MIN. (Rge=10 0 02 04 O06 O8 1 1.20 160 46) Vge () Vee (VY) -4 -3 -2 =1 0 Typical DC current gain Collector-emitter breakdown voltage G-1524 Veer W) 150 130 120 102 10 10 ie (A) 2 4 66 2 468 2 4 68 2 4 68 10 10? 10 10 Ree (a) 161