AP850 850nm Single-Mode VCSEL Arrays 125 m 200 m 175 m Preliminary datasheet - not released for production 125 m 500 m 250 m 125 m 250 m Features 2.5 mm 100 m * 1D VCSEL ARRAYS * 850nm WAVELENGTH 250 m RANGE * SINGLE-MODE EMISSION WAVELENGTH * HIGH UNIFORMITY CONFIGURA* VARIOUS TIONS AVAILABLE ON REQUEST SIDE MODE * >20dB SUPPRESSION * Ordering information Part Number APA1301020000 APA1301100000 Description 850nm singlemode array 1x2 850nm singlemode array 1x10 500 m AP850 Electro-optical characteristics Parameter Symbol Conditions 850nm SingleMode VCSEL Arrays (for individual lasers) Ratings Units Min Typ Max Threshold current Ith Threshold voltage Vth Operating current I op Operating voltage V op Emission wavelength* Wavelength uniformity* Optical output power (MM) 2.0 2.5 1.8 Pout = 0.5 mW 3 4 l op = 1.5 x I th I op = 10mA mA V 5 2 mA V 840 850 860 nm 2 nm P max 3.5 1.5 2 4 mW Slope efficiency l op = 1.5 x I th 0.3 mW/mA Beam divergence FWHM 12 >3 GHz Bandwidth f 3dB MM = multi-mode; FWHM = full width half-maximum *Tighter wavelength specifications available on request (T=25C) Thermal characteristics Parameter Symbol Ratings Units Min Typ Max Temperature tuning coefficient /T 0.06 nm/K Threshold current variation 0 to +70C Ith 1.8 mA /I 0.3 nm/mA Current tuning coefficient Absolute maximum ratings Parameter Symbol Rating Units Optical output power P max 4 mW Peak forward current I max 10 mA Electrical power dissipation P tot 30 mW/laser Reverse voltage VR 11 V Operating temperature T op 0 to +70 C Storage temperature T stg -40 to +100 C (T=25C) The above specifications are subject to change without notice INVISIBLE LASER RADIATION - AVOID DIRECT EXPOSURE PEAK POWER : 3 mW WAVELENGTH : 850 nm CLASS IIIb LASER PRODUCT Avalon Photonics Ltd, Badenerstrasse 569 8048 Zurich, Switzerland Tel: +41 1 498 1411 Fax: +41 1 498 1412 Email: vcsel@avap.ch Internet: www.avalon-photonics.com