MDD95-16N1B Standard Rectifier Module VRRM = 2x 1600 V I FAV = 120 A VF = 1.13 V Phase leg Part number MDD95-16N1B Backside: isolated 2 1 3 Features / Advantages: Applications: Package: TO-240AA Package with DCB ceramic Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current Diode for main rectification For single and three phase bridge configurations Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Height: 30 mm Base plate: DCB ceramic Reduced weight Advanced power cycling Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b MDD95-16N1B Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C VRRM max. repetitive reverse blocking voltage TVJ = 25C 1600 IR reverse current VF forward voltage drop min. typ. VR = 1600 V TVJ = 25C 200 A TVJ = 150C 15 mA I F = 150 A TVJ = 25C 1.20 V 1.43 V 1.13 V TVJ = 125 C I F = 150 A I F = 300 A I FAV average forward current TC = 100 C I F(RMS) RMS forward current 180 sine VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case for power loss calculation only R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved V VR = 1600 V I F = 300 A Ptot max. Unit 1700 V 1.46 V T VJ = 150 C 120 A 180 A TVJ = 150 C 0.75 V 1.95 m 0.26 K/W K/W 0.20 TC = 25C 481 W t = 10 ms; (50 Hz), sine TVJ = 45C 2.80 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 3.03 kA t = 10 ms; (50 Hz), sine TVJ = 150 C 2.38 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 2.57 kA t = 10 ms; (50 Hz), sine TVJ = 45C 39.2 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V 38.1 kAs t = 10 ms; (50 Hz), sine TVJ = 150 C 28.3 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C 27.5 kAs 116 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20161222b MDD95-16N1B Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 200 Unit A -40 150 C -40 125 C 125 C 76 Weight g MD mounting torque 2.5 4 Nm MT terminal torque 2.5 4 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL terminal to terminal 13.0 terminal to backside 16.0 t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL 1 mA 9.7 mm 16.0 mm 3600 V 3000 V Date Code + Assembly Line Circuit yywwAA Part Number Data Matrix Lot.No: xxxxxx Ordering Standard Ordering Number MDD95-16N1B Similar Part MDD95-08N1B MDD95-12N1B MDD95-14N1B MDD95-18N1B Equivalent Circuits for Simulation I V0 R0 Marking on Product MDD95-16N1B Package TO-240AA TO-240AA TO-240AA TO-240AA * on die level Delivery Mode Box Code No. 453161 Voltage class 800 1200 1400 1800 T VJ = 150 C Rectifier V 0 max threshold voltage 0.75 V R0 max slope resistance * 0.76 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Quantity 36 Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b MDD95-16N1B Outlines TO-240AA 2 IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved 1 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b MDD95-16N1B Rectifier 250 105 3000 VR = 0 V 50 Hz, 80% V RRM 2500 DC 180 sin 120 60 30 200 2000 IFSM 150 I2t TVJ = 45C IFAVM TVJ = 45C 1500 [A] [A2s] 100 [A] 1000 TVJ = 150C TVJ = 150C 50 500 0 10-3 0 104 10-2 10-1 100 1 101 2 3 6 8 0 10 t [s] Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration 50 100 150 200 TC [C] t [ms] Fig. 3 Maximum forward current at case temperature Fig. 2 I2t versus time (1-10 ms) 200 RthJA [K/W] 0.4 0.6 150 0.8 1 PT 1.2 100 1.5 [W] 2 DC 180 sin 120 60 30 50 0 0 50 100 150 3 0 50 ITAVM, IFAVM [A] 100 150 200 TA [C] Fig. 4 Power dissipation vs. onstate current and ambient temperature (per diode) 800 RthKA [K/W] 0.1 0.15 600 0.2 R L 0.3 Ptot 0.4 400 0.5 [W] 0.6 0 0.7 Circuit B2 2x MDD95 200 0 50 100 150 200 250 IdAVM [A] 0 50 100 150 200 TA [C] Fig. 6 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature; R = resistive load,L = inductive load IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b MDD95-16N1B Rectifier 1000 RthJA [KW] 0.03 0.06 800 0.08 0.12 Ptot 600 [W] 400 0.15 0.3 0.5 Circuit B6 3x MDD95 200 0 0 100 200 300 0 50 100 IDAVM [A] 150 200 TA [C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 0.4 RthJC for various conduction angles d: d RthJC [K/W] 30 60 120 0.3 180 DC ZthJC 0.2 DC 0.26 180 0.28 120 0.30 60 0.34 30 0.38 [K/W] Constants for ZthJC calculation: i Rthi [K/W] 0.1 0 10-3 10-2 10-1 100 101 102 ti [s] 1 0.013 0.0012 2 0.072 0.0470 3 0.175 0.3940 103 t [s] Fig. 7 Transient thermal impedance junction to case (per diode) RthJK for various conduction angles d: d RthJK [K/W] DC 0.46 180 0.48 120 0.50 60 0.54 30 0.58 0.6 30 0.5 60 120 180 0.4 DC ZthJK 0.3 Constants for ZthJK calculation: [K/W] i Rthi [K/W] 0.2 1 2 3 4 0.1 0 10-3 10-2 10-1 100 101 102 103 0.013 0.072 0.175 0.200 ti [s] 0.0012 0.0470 0.3940 1.3200 104 t [s] Fig. 8 Transient thermal impedance junction to heatsink (per thyristor) IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b