APT6013JVR 40A 0.130 600V POWER MOS V (R) S S Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. 27 2 T- D G SO "UL Recognized" * Faster Switching * 100% Avalanche Tested * Lower Leakage * Popular SOT-227 Package ISOTOP (R) D G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter Drain-Source Voltage APT6013JVR UNIT 600 Volts 40 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 500 Watts 4 W/C VGSM PD TJ,TSTG 160 Linear Derating Factor -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 30 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 600 Volts 40 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) MAX 0.130 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 50 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Ohms A 100 nA 4 Volts 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com UNIT 500 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) TYP 050-5619 Rev A 6-2006 Symbol DYNAMIC CHARACTERISTICS Symbol APT6013JVR Characteristic Test Conditions MIN TYP MAX Ciss Input Capacitance VGS = 0V 8800 10560 Coss Output Capacitance VDS = 25V 1050 1470 Reverse Transfer Capacitance f = 1 MHz 420 630 Crss Qg Total Gate Charge Qgs 3 VGS = 10V 360 540 VDD = 0.5 VDSS 42 65 ID = ID[Cont.] @ 25C 160 240 Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr VGS = 15V 14 28 VDD = 0.5 VDSS 14 28 ID = ID[Cont.] @ 25C 50 75 RG = 0.6 7 14 TYP MAX Rise Time td(off) Turn-off Delay Time tf Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Symbol IS ISM VSD MIN 40 Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) 160 Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) 1.3 t rr Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Q rr Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s) UNIT Amps Volts 730 ns 19 C THERMAL / PACKAGE CHARACTERISTICS Symbol Characteristic MIN RJC Junction to Case RJA Junction to Ambient VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. 1 Repetitive Rating: Pulse width limited by maximum junction temperature. TYP MAX UNIT 0.25 40 C/W 2500 Volts 13 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.89mH, R = 25, Peak I = 30A j G L 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% Microsemi reserves the right to change, without notice, the specifications and information contained herein. D=0.5 0.1 0.2 0.05 0.1 0.05 0.01 0.005 Note: PDM Z JC, THERMAL IMPEDANCE (C/W) 050-5619 Rev A 6-2006 0.3 0.02 0.01 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION lb*in APT6013JVR 100 VGS=6V, 7V, 10V & 15V 6V 80 5.5V 60 40 5V 20 4.5V ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 80 60 40 TJ = +125C 20 TJ = +25C TJ = -55C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 40 32 24 16 8 0 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 25 40 5V 20 4.5V 1.20 V GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 1.15 1.10 VGS=10V 1.05 VGS=20V 1.00 0.95 0 15 30 45 60 75 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -50 1.2 2.5 I = 0.5 I [Cont.] D D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 5.5V 60 0 3 6 9 12 15 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 50 100 150 200 250 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 80 0 0 100 VGS=7V, 10V & 15V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5619 Rev A 6-2006 ID, DRAIN CURRENT (AMPERES) 100 APT6013JVR ID, DRAIN CURRENT (AMPERES) 30,000 Ciss C, CAPACITANCE (pF) 10,000 Graph removed 5,000 Coss Crss 1,000 500 100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 20 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I = I [Cont.] D D VDS=120V 16 VDS=300V 12 VDS=480V 8 4 0 0 150 300 450 600 750 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 200 100 TJ =+150C 50 TJ =+25C 10 5 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) 050-5619 Rev A 6-2006 Drain * Source Gate Dimensions in Millimeters and (Inches) VIsolation, RMS Voltage (50-60 Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Minute) = 2500 Volts Minimum "UL Recognized" File No. E145592 ISOTOP(R) is a Registered Trademark of SGS Thomson. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.