2731GN-100LV 100 Watts - 50 Volts, 3 ms, 30% S-Band Radar 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-100LV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 11 dB gain, 100 Watts of pulsed RF output power at 3ms pulse width, 30% duty factor across the 2700 to 3100 MHz band. Market Application - 2731GN-100LV is designed for S-Band Pulsed Radar ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25C Maximum Voltage and Current Drain-Source Voltage (VDSS) Gate-Source Voltage (VGS) 600 W 150 V -8 to +0 V Maximum Temperatures -55 to +125 C Storage Temperature (TSTG) Operating Junction Temperature +250 C ELECTRICAL CHARACTERISTICS @ 25C Symbol Pout Gp d Dr VSWR-T jc Characteristics Output Power Power Gain Drain Efficiency Droop Load Mismatch Tolerance Thermal Resistance Test Conditions Pin=7.95W Freq=2700,2900,3100 MHz Pin=7.95W Freq=2700,2900,3100 MHz Pin=7.95W Freq=2700,2900,3100 MHz Pin=7.95W Freq=2700,2900,3100 MHz Pout=100W, Freq= 2900MHz Min 100 11 50 Typ 107 11.29 55 Max 1.0 3:1 Pulse Width=3mS, Duty=30% 1.02 Units W dB % dB C/W Bias Condition: Vdd=+50V, Idq=70mA constant current (Vgs= -2.0 ~ -4.5V typical) FUNCTIONAL CHARACTERISTICS @ 25C ID(Off) IG(Off) BVDSS Drain leakage current Gate leakage current Drain-source breakdown voltage Export Classification: EAR-99 VgS = -8V, VD = 60V VgS = -8V, VD = 0V Vgs =-8V, ID = 30mA 10 8 150 June 2013 For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information mA mA V 2731GN-100LV 100 Watts - 50 Volts, 3 ms, 30% S-Band Radar 2700 - 3100 MHz TYPICAL BROAD BAND PERFORMACE DATA Frequency Pin (W) Pout (W) Id (A) RL (dB) Nd (%) G (dB) 2700 MHz 7.9 113.5 1.3 -11 53 11.55 Droop (dB) 0.6 2900 MHz 7.9 119 1.1 -13 65 11.75 0.5 3100 MHz 7.9 104 .97 -8 66 11.18 0.5 Pin vs Pout vs Gain 2731GN100LV: Vdd=50V, Idq=70mA, 3mS @ 30% 140 Pout(W) 100 20 80 16 60 40 Gain(dB) 24 120 12 20 8 0 2 3 4 5 6 7 8 2.7GHz Pin(W) 9 2.9GHz 3.1GHz Pin vs Efficiency 2731GN100LV: Vdd=50V, Idq=70mA, 3mS @ 30% 70% Efficiency(%) 60% 50% 40% 30% 20% 10% 0% 2.0 3.0 4.0 5.0 6.0 Pin(W) 7.0 2.7GHz 8.0 2.9GHz 9.0 3.1GHz For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information 2731GN-100LV 100 Watts - 50 Volts, 3 ms, 30% S-Band Radar 2700 - 3100 MHz TRANSISTOR IMPEDANCE INFORMATION Note: Zsource is looking into the input circuit; Z Load is looking into the output circuit. Impedance Data Freq (GHz) Zs Zl 2.7 7.29 - j10.87 3.45 - j3.90 2.9 6.52 - j10.43 3.35 - j3.07 3.1 5.78 - j9.93 3.30 - j2.26 For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information 2731GN-100LV 100 Watts - 50 Volts, 3 ms, 30% S-Band Radar 2700 - 3100 MHz TEST CIRCUIT DIAGRAM Board Material: Roger Duriod 6002 @ 20 Mil Thickness, Er=2.9 For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information 2731GN-100LV 100 Watts - 50 Volts, 3 ms, 30% S-Band Radar 2700 - 3100 MHz 55-QP PACKAGE DIMENSION Dimension A B C D E F G H I J K L Min (mil) 213 798 560 258 43 226 235 235 60 81 116 4 Min (mm) 5.41 20.26 14.22 6.55 1.09 5.74 5.96 5.96 1.52 2.06 2.94 .102 Max (mil) 217 802 564 362 47 230 239 239 62 82 118 6 Max (mm) 5.51 20.37 14.32 9.19 1.19 5.84 6.07 6.07 1.57 2.08 2.99 .152 For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information 2731GN-100LV 100 Watts - 50 Volts, 3 ms, 30% S-Band Radar 2700 - 3100 MHz The information contained in the document is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply . This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other missioncritical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. The product is subject to other terms and conditions which can be located on the Web at http://www.microsemi.com/legal/tnc.asp. Revision History Revision Level / Date 0.1 / 6 March 2013 Para. Affected - Description Initial Preliminary Release For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information