For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
2731GN-100LV
100 Watts - 50 Volts, 3 ms, 30%
S-Band Radar 2700 - 3100 MHz
GENERAL DESCRIPTION
The 2731GN-100LV is an internally matched, COMMON SOURCE,
class AB, GaN on SiC HEMT transistor capable of providing over 11 dB
gain, 100 Watts of pulsed RF output power at 3ms pulse width, 30% duty
factor across the 2700 to 3100 MHz band.
Market Application – 2731GN-100LV is designed for S-Band Pulsed
Radar
CASE OUTLINE
55-QP
Common Source
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25C 600 W
Maximum Voltage and Current
Drain-Source Voltage (VDSS) 150 V
Gate-Source Voltage (VGS) -8 to +0 V
Maximum Temperatures
Storage Temperature (TSTG) -55 to +125 C
Operating Junction Temperature +250 C
ELECTRICAL CHARACTERISTICS @ 25C
Symbol Characteristics Test Conditions Min Typ Max Units
Pout Output Power Pin=7.95W Freq=2700,2900,3100 MHz 100 107 W
Gp Power Gain Pin=7.95W Freq=2700,2900,3100 MHz 11 11.29 dB
d Drain Efficiency Pin=7.95W Freq=2700,2900,3100 MHz 50 55 %
Dr Droop Pin=7.95W Freq=2700,2900,3100 MHz 1.0 dB
VSWR-T Load Mismatch
Tolerance
Pout=100W, Freq= 2900MHz 3:1
Өjc Thermal Resistance Pulse Width=3mS, Duty=30% 1.02 °C/W
Bias Condition: Vdd=+50V, Idq=70mA constant current (V gs= -2.0 ~ -4.5V typical)
FUNCTIONAL CHARACTERISTICS @ 25C
ID(Off) Drain leakage current VgS = -8V, VD = 60V 10 mA
IG(Off) Gate leakage current VgS = -8V, VD = 0V 8 mA
BVDSS Drain-source breakdown
voltage
Vgs =-8V, ID = 30mA 150 V
Export Classification: EAR-99 June 2013
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
2731GN-100LV
100 Watts - 50 Volts, 3 ms, 30%
S-Band Radar 2700 - 3100 MHz
TYPICAL BROAD BAND PERFORMACE DATA
Frequency Pin (W) Pout (W) Id (A) RL (dB) Nd (%) G (dB) Droop
(dB)
2700 MHz 7.9 113.5 1.3 -11 53 11.55 0.6
2900 MHz 7.9 119 1.1 -13 65 11.75 0.5
3100 MHz 7.9 104 .97 -8 66 11.18 0.5
PinvsPoutvsGain
2731GN‐100LV:Vdd=50V,Idq=70mA,3mS@30%
0
20
40
60
80
100
120
140
2345 6789
Pin(W)
Pout(W)
8
12
16
20
24
Gain(dB)
2.7GHz 2.9GHz 3.1GHz
0%
10%
20%
30%
40%
50%
60%
70%
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
Efficiency(%)
Pin(W)
PinvsEfficiency
2731GN‐100LV:Vdd=50V,Idq=70mA,3mS@30%
2.7GHz 2.9GHz 3.1GHz
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
2731GN-100LV
100 Watts - 50 Volts, 3 ms, 30%
S-Band Radar 2700 - 3100 MHz
TRANSISTOR IMPEDANCE INFORMATION
Note: Zsource is looking into the input circuit;
Load
Z is looking into the output circuit.
Impedance Data
Freq (GHz) Zs Zl
2.7 7.29 – j10.87 3.45 – j3.90
2.9 6.52 – j10.43 3.35 – j3.07
3.1 5.78 – j9.93 3.30 – j2.26
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
2731GN-100LV
100 Watts - 50 Volts, 3 ms, 30%
S-Band Radar 2700 - 3100 MHz
TEST CIRCUIT DIAGRAM
Board Material: Roger Duriod 6002 @ 20 Mil Thickness, Er=2.9
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
2731GN-100LV
100 Watts - 50 Volts, 3 ms, 30%
S-Band Radar 2700 - 3100 MHz
55-QP PACKAGE DIMENSION
Dimension Min (mil) Min (mm) Max (mil) Max (mm)
A 213 5.41 217 5.51
B 798 20.26 802 20.37
C 560 14.22 564 14.32
D 258 6.55 362 9.19
E 43 1.09 47 1.19
F 226 5.74 230 5.84
G 235 5.96 239 6.07
H 235 5.96 239 6.07
I 60 1.52 62 1.57
J 81 2.06 82 2.08
K 116 2.94 118 2.99
L 4 .102 6 .152
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
2731GN-100LV
100 Watts - 50 Volts, 3 ms, 30%
S-Band Radar 2700 - 3100 MHz
The information contained in the document is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be
copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of
Microsemi If the recipient of this document has entered into a disclosure agreement with Microsemi, t hen the terms of such
Agreement will also apply . This document and the information contained herein may not be modified, by any person other than
authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is
granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels
or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of
Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any
notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other mission-
critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied
warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright or other intellectual property right. The product is subject to other terms and
conditions which can be located on the Web at http://www.microsemi.com/legal/tnc.asp.
Revision History
Revision Lev el / Date Para. Affected Description
0.1 / 6 March 2013 - Initial Preliminary Release
