September 1995 2
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
FEATURES
•High power gain
•Low noise figure
•High transition frequency
•Gold metallization ensures
excellent reliability
•SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is designed for wideband
applications such as satellite TV
tuners and RF portable
communications equipment up to
2 GHz.
PINNING
PIN DESCRIPTION
Code: V2
1 base
2 emitter
3 collector
Fig.1 SOT323.
handbook, 2 columns
3
12
MBC870
Top view
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Tsis the temperature at the soldering point of the collector tab.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter −−20 V
VCEO collector-emitter voltage open base −−10 V
ICDC collector current −−50 mA
Ptot total power dissipation up to Ts=118°C; note 1 −−300 mW
hFE DC current gain IC= 15 mA; VCE = 5 V; Tj=25°C 60 100 −
fTtransition frequency IC= 15 mA; VCE = 8 V; f = 2 GHz;
Tamb =25°C−8−GHz
GUM maximum unilateral power gain Ic= 15 mA; VCE = 8 V; f = 1 GHz;
Tamb =25°C−13 −dB
F noise figure Ic= 5 mA; VCE = 8 V; f = 1 GHz −1.3 −dB
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −20 V
VCEO collector-emitter voltage open base −10 V
VEBO emitter-base voltage open collector −2.5 V
ICDC collector current −50 mA
Ptot total power dissipation up to Ts=118°C; note 1 −300 mW
Tstg storage temperature −65 150 °C
Tjjunction temperature −175 °C