DATA SH EET
Product specification
File under Discrete Semiconductors, SC14 September 1995
DISCRETE SEMICONDUCTORS
BFQ67W
NPN 8 GHz wideband transistor
September 1995 2
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
FEATURES
•High power gain
•Low noise figure
•High transition frequency
•Gold metallization ensures
excellent reliability
•SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is designed for wideband
applications such as satellite TV
tuners and RF portable
communications equipment up to
2 GHz.
PINNING
PIN DESCRIPTION
Code: V2
1 base
2 emitter
3 collector
Fig.1 SOT323.
handbook, 2 columns
3
12
MBC870
Top view
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Tsis the temperature at the soldering point of the collector tab.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter −−20 V
VCEO collector-emitter voltage open base −−10 V
ICDC collector current −−50 mA
Ptot total power dissipation up to Ts=118°C; note 1 −−300 mW
hFE DC current gain IC= 15 mA; VCE = 5 V; Tj=25°C 60 100 −
fTtransition frequency IC= 15 mA; VCE = 8 V; f = 2 GHz;
Tamb =25°C−8−GHz
GUM maximum unilateral power gain Ic= 15 mA; VCE = 8 V; f = 1 GHz;
Tamb =25°C−13 −dB
F noise figure Ic= 5 mA; VCE = 8 V; f = 1 GHz −1.3 −dB
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −20 V
VCEO collector-emitter voltage open base −10 V
VEBO emitter-base voltage open collector −2.5 V
ICDC collector current −50 mA
Ptot total power dissipation up to Ts=118°C; note 1 −300 mW
Tstg storage temperature −65 150 °C
Tjjunction temperature −175 °C
September 1995 3
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
THERMAL RESISTANCE
Note
1. Tsis the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj=25°C, unless otherwise specified.
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
Rth j-s thermal resistance from junction to
soldering point up to Ts=118°C; note 1 190 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE= 0; VCB =5 V −−50 nA
hFE DC current gain IC= 15 mA; VCE = 5 V 60 100 −
Cccollector capacitance IE=i
e= 0; VCB = 8 V; f = 1 MHz −0.7 −pF
Ceemitter capacitance IC=i
c= 0; VEB = 0.5 V; f = 1 MHz −1.3 −pF
Cre feedback capacitance IC= 0; VCB = 8 V; f = 1 MHz −0.5 −pF
fTtransition frequency IC= 15 mA; VCE = 8 V; f = 2 GHz;
Tamb =25°C−8−GHz
GUM maximum unilateral power gain
(note 1) IC= 15 mA; VCE = 8 V; f = 1 GHz
Tamb =25°C−13 −dB
IC= 15 mA; VCE = 8 V; f = 2 GHz;
Tamb =25°C−8−dB
F noise figure Γs=Γopt;I
C= 5 mA; VCE =8 V;
f=1GHz −1.3 −dB
Γs=Γopt;I
C= 15 mA; VCE =8 V;
f=1GHz −2−dB
Γs=Γopt;I
C= 5 mA; VCE =8 V;
f=2GHz −2.2 −dB
IC= 5 mA; VCE =8 V;
f = 2 GHz; Zs=60Ω−2.5 −dB
Γs=Γopt;I
C= 15 mA; VCE =8 V;
f=2GHz −2.7 −dB
IC= 5 mA; VCE =8 V;
f = 2 GHz; Zs=60Ω−3−dB
GUM 10 log S21 2
1S
11 2
–
1S
22 2
–
-------------------------------------------------------------- dB.=
September 1995 4
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
Fig.2 Power derating curve.
handbook, halfpage
0 50 100 200
400
300
100
0
200
MRC045- 1
150
Ptot
(mW)
Ts(oC)
Fig.3 DC current gain as a function of collector
current.
VCE = 5 V; Tj=25°C.
handbook, halfpage
0
120
80
40
020 40
MBB301
60
I (mA)
C
FE
h
Fig.4 Feedback capacitance as a function of
collector-base voltage.
IC= 0; f = 1 MHz.
handbook, halfpage
0
0.2
0.4
0.6
0.8
04812
MRC039
(pF)
V (V)
CB
Cre
Fig.5 Transition frequency as a function of
collector current.
VCE = 8 V; f = 2 GHz; Tamb =25°C.
handbook, halfpage
01020 40
8
6
2
0
4
MBB303
30 I (mA)
C
(GHz)
T
f10
September 1995 5
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
Fig.6 Gain as a function of collector current.
VCE = 8 V; f = 1 GHz; Tamb =25°C.
handbook, halfpage
MRC042
0
5
10
15
20
0 5 10 15 20 25 30 35
MSG
Gmax
gain
(dB)
IC(mA)
GUM
Fig.7 Gain as a function of frequency.
IC= 5 mA; VCE = 8 V; Tamb =25°C.
handbook, halfpage
0
10
20
30
40
50
10−210−1110
f (GHz)
MRC040
MSG
GUM
Gmax
gain
(dB)
Fig.8 Gain as a function of frequency.
IC= 15 mA; VCE = 8 V; Tamb =25°C.
handbook, halfpage
MRC041
0
10
20
30
40
50
10−210−1110
f (GHz)
MSG
GUM
Gmax
gain
(dB)
Fig.9 Gain as a function of frequency.
IC= 30 mA; VCE = 8 V; Tamb =25°C.
handbook, halfpage
MRC043
0
10
20
30
40
50
10−210−1110
f (GHz)
MSG
GUM
Gmax
gain
(dB)
September 1995 6
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
Fig.10 Minimum noise figure as a function of
collector current.
VCE = 8 V; f = 1 GHz.
handbook, halfpage
MRC044
0
1
2
3
4
11010
2
I
C
(mA)
F
(dB)
handbook, full pagewidth
MRC046
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 1 2 5
180°
135°
90°
45°
0°
−45°
−90°
−135°
Fmin = 1.5 dB
F = 2 dB
F = 2.5 dB
F = 3 dB
opt
Fig.11 Noise circle.
IC= 5 mA; VCE = 8 V;
f = 1 GHz; Zo=50Ω.
September 1995 7
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
Fig.12 Common emitter input reflection coefficient (S11).
IC= 15 mA; VCE = 8 V; Zo=50Ω.
handbook, full pagewidth
MRA047
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2
3 GHz
0.5 1 2 5
180°
135°
90°
45°
0°
−45°
−90°
−135°
40 MHz
Fig.13 Common emitter forward transmission coefficient (S21).
IC= 15 mA; VCE = 8 V.
handbook, full pagewidth
MRC048
180°
135°
90°
45°
0°
−45°
−90°
−135°
50 40 30 20 10 3 GHz
40 MHz
September 1995 8
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
Fig.14 Common emitter reverse transmission coefficient (S12).
IC= 15 mA; VCE = 8 V.
handbook, full pagewidth
MRC049
180°
135°
90°
45°
0°
−45°
−90°
−135°
0.5 0.4 0.3 0.2 0.1
3 GHz
40 MHz
Fig.15 Common emitter output reflection coefficient (S22).
IC= 15 mA; VCE = 8 V; Zo=50Ω.
handbook, full pagewidth
MRC050
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 1 2 5
180°
135°
90°
45°
0°
−45°
−90°
−135°
3 GHz
40 MHz
September 1995 9
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
PACKAGE OUTLINE
UNIT A1
max bpcD Ee
1
H
E
L
pQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface mounted package; 3 leads SOT323
97-02-28
September 1995 10
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
