DISCRETE SEMICONDUCTORS DATA SHEET BFQ67W NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 8 GHz wideband transistor FEATURES BFQ67W PINNING * High power gain PIN * Low noise figure DESCRIPTION Code: V2 * High transition frequency 1 base * Gold metallization ensures excellent reliability 2 emitter 3 collector * SOT323 envelope. handbook, 2 columns DESCRIPTION NPN transistor in a plastic SOT323 envelope. 3 1 2 Top view MBC870 It is designed for wideband applications such as satellite TV tuners and RF portable communications equipment up to 2 GHz. Fig.1 SOT323. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter - - 20 V VCEO collector-emitter voltage open base - - 10 V IC DC collector current - - 50 mA Ptot total power dissipation up to Ts = 118 C; note 1 - - 300 mW hFE DC current gain IC = 15 mA; VCE = 5 V; Tj = 25 C 60 100 - fT transition frequency IC = 15 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C - 8 - GHz GUM maximum unilateral power gain Ic = 15 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C - 13 - dB F noise figure Ic = 5 mA; VCE = 8 V; f = 1 GHz - 1.3 - dB LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 20 V VCEO collector-emitter voltage open base - 10 V VEBO emitter-base voltage open collector - 2.5 V IC DC collector current - 50 mA Ptot total power dissipation - 300 mW Tstg storage temperature -65 150 C Tj junction temperature - 175 C up to Ts = 118 C; note 1 Note 1. Ts is the temperature at the soldering point of the collector tab. September 1995 2 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67W THERMAL RESISTANCE SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point THERMAL RESISTANCE up to Ts = 118 C; note 1 190 K/W Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C, unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. - - 50 UNIT ICBO collector cut-off current hFE DC current gain IC = 15 mA; VCE = 5 V 60 100 - Cc collector capacitance IE = ie = 0; VCB = 8 V; f = 1 MHz - 0.7 - pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz - 1.3 - pF IE = 0; VCB = 5 V nA Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz - 0.5 - pF fT transition frequency IC = 15 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C - 8 - GHz GUM maximum unilateral power gain (note 1) IC = 15 mA; VCE = 8 V; f = 1 GHz Tamb = 25 C - 13 - dB IC = 15 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C - 8 - dB s = opt; IC = 5 mA; VCE = 8 V; f = 1 GHz - 1.3 - dB s = opt; IC = 15 mA; VCE = 8 V; f = 1 GHz - 2 - dB s = opt; IC = 5 mA; VCE = 8 V; f = 2 GHz - 2.2 - dB IC = 5 mA; VCE = 8 V; f = 2 GHz; Zs = 60 - 2.5 - dB s = opt; IC = 15 mA; VCE = 8 V; f = 2 GHz - 2.7 - dB IC = 5 mA; VCE = 8 V; f = 2 GHz; Zs = 60 - 3 - dB F noise figure Note 1. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 S 21 - dB. G UM = 10 log ------------------------------------------------------------2 2 1 - S 11 1 - S 22 September 1995 3 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67W MRC045- 1 MBB301 400 handbook, halfpage 120 handbook, halfpage P tot (mW) h FE 300 80 200 40 100 0 0 50 100 150 0 200 0 T ( o C) 20 40 s I C (mA) 60 VCE = 5 V; Tj = 25 C. Fig.2 Power derating curve. Fig.3 MRC039 0.8 DC current gain as a function of collector current. MBB303 10 handbook, halfpage handbook, halfpage fT Cre (GHz) (pF) 8 0.6 6 0.4 4 0.2 0 2 0 0 4 8 VCB (V) 0 12 10 20 40 I C (mA) IC = 0; f = 1 MHz. VCE = 8 V; f = 2 GHz; Tamb = 25 C. Fig.4 Fig.5 Feedback capacitance as a function of collector-base voltage. September 1995 30 4 Transition frequency as a function of collector current. Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67W In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. MRC042 handbook,20 halfpage MRC040 50 handbook, halfpage gain (dB) gain (dB) 40 MSG 15 G max G UM G UM 30 10 MSG 20 5 G max 10 0 0 5 10 15 20 25 30 35 I C (mA) 0 10-2 VCE = 8 V; f = 1 GHz; Tamb = 25 C. 1 10 f (GHz) IC = 5 mA; VCE = 8 V; Tamb = 25 C. Fig.6 Gain as a function of collector current. Fig.7 Gain as a function of frequency. MRC041 50 gain MRC043 50 handbook, halfpage handbook, halfpage gain (dB) (dB) G UM 40 10-1 40 G UM 30 30 MSG MSG 20 20 G max 10 G max 10 0 10-2 10-1 1 f (GHz) 0 10-2 10 IC = 15 mA; VCE = 8 V; Tamb = 25 C. 1 f (GHz) 10 IC = 30 mA; VCE = 8 V; Tamb = 25 C. Fig.8 Gain as a function of frequency. September 1995 10-1 Fig.9 Gain as a function of frequency. 5 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67W MRC044 4 handbook, halfpage F (dB) 3 2 1 0 1 10 102 I C (mA) VCE = 8 V; f = 1 GHz. Fig.10 Minimum noise figure as a function of collector current. 90 handbook, full pagewidth 1.0 1 135 0.8 45 2 0.5 0.6 Fmin = 1.5 dB 0.2 0.4 5 opt 180 0.2 0 0.5 1 0.2 2 5 0 F = 2 dB 0 F = 2.5 dB F = 3 dB 0.2 5 0.5 2 -135 -45 1 MRC046 -90 IC = 5 mA; VCE = 8 V; f = 1 GHz; Zo = 50 . Fig.11 Noise circle. September 1995 6 1.0 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67W 90 handbook, full pagewidth 1.0 1 135 0.8 45 2 0.5 0.6 0.2 0.4 5 0.2 3 GHz 0.2 0 180 0.5 1 2 5 0 0 40 MHz 5 0.2 0.5 2 -135 -45 1 MRA047 1.0 -90 IC = 15 mA; VCE = 8 V; Zo = 50 . Fig.12 Common emitter input reflection coefficient (S11). 90 handbook, full pagewidth 135 45 40 MHz 180 3 GHz 50 40 30 20 0 10 -45 -135 -90 MRC048 IC = 15 mA; VCE = 8 V. Fig.13 Common emitter forward transmission coefficient (S21). September 1995 7 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67W 90 handbook, full pagewidth 135 45 3 GHz 40 MHz 180 0 0.5 0.4 0.3 0.2 0.1 -45 -135 -90 MRC049 IC = 15 mA; VCE = 8 V. Fig.14 Common emitter reverse transmission coefficient (S12). 90 handbook, full pagewidth 1.0 1 135 0.8 45 2 0.5 0.6 0.2 0.4 5 0.2 180 0.2 0 0.5 1 2 5 0 0 40 MHz 3 GHz 5 0.2 0.5 2 -135 -45 1 MRC050 -90 IC = 15 mA; VCE = 8 V; Zo = 50 . Fig.15 Common emitter output reflection coefficient (S22). September 1995 8 1.0 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67W PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 September 1995 REFERENCES IEC JEDEC EIAJ SC-70 9 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67W DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 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