© 2010 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 200 V
VDGR TJ= 25°C to 175°C, RGS = 1MΩ200 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C32 A
IDM TC= 25°C, Pulse Width Limited by TJM 64 A
IATC= 25°C16 A
EAS TC= 25°C 250 mJ
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 10 V/ns
PDTC= 25°C 200 W
TJ- 55 ... +175 °C
TJM 175 °C
Tstg - 55 ... +175 °C
TL1.6mm (0.062in.) from Case for 10s 300 °C
Tsold Plastic Body for 10 Seconds 260 °C
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 200 V
VGS(th) VDS = VGS, ID = 250μA 3.0 5.0 V
IGSS VGS = ± 20V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS= 0V 3 μA
TJ = 150°C 200 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 78 mΩ
TrenchTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXTA32N20T
IXTP32N20T
VDSS = 200V
ID25 = 32A
RDS(on) ≤≤
≤≤
≤ 78mΩΩ
ΩΩ
Ω
DS99959B(10/10)
Features
zInternational Standard Packages
z175°C Operating Temperature
zAvalanche Rated
zLow RDS(on)
zFast Intrinsic Rectifier
zHigh Current Handling Capability
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zDC-DC Converters
zBattery Chargers
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC Choppers
zAC Motor Drives
zUninterruptible Power Supplies
zHigh Speed Power Switching
Applications
G = Gate D = Drain
S = Source Tab = Drain
TO-263 AA (IXTA)
GDS
TO-220AB (IXTP)
D (Tab)
G
S
D (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA32N20T
IXTP32N20T
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 18 30 S
Ciss 1760 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 212 pF
Crss 31 pF
td(on) 14 ns
tr 18 ns
td(off) 55 ns
tf 31 ns
Qg(on) 38 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 12 nC
Qgd 13 nC
RthJC 0.75 °C/W
RthCH TO-220 0.50 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
IS VGS = 0V 32 A
ISM Repetitive, Pulse Width Limited by TJM 128 A
VSD IF = IS, VGS = 0V, Note 1 1.2 V
trr 110 ns
IRM 6.90 A
QRM 0.38 nC
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact location must be
5mm or less from the package body.
Resistive Switching Times
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
IF = 0.5 • ID25, VGS = 0V
-di/dt = 100A/μs
VR = 0.5 • VDSS
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Pins: 1 - Gate 2 - Drain
3 - Source
TO-220 Outline
TO-263 Outline
© 2010 IXYS CORPORATION, All Rights Reserved
IXTA32N20T
IXTP32N20T
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
4
8
12
16
20
24
28
32
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
90
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
5V
6V
7V
Fi g . 3. Ou tp u t Ch ar acter i sti cs @ T
J
= 150ºC
0
4
8
12
16
20
24
28
32
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5
V
6
V
Fig. 4. R
DS(on)
Normalized to I
D
= 16A Value vs.
Jun cti o n Temperatu r e
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 32A
I
D
= 16A
Fig. 5. R
DS(on)
Normalized to I
D
= 16A Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 5 10 15 20 25 30 35 40 45 50 55 60
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 175ºC
T
J
= 25ºC
Fi g . 6. D r ai n Cu r r en t vs. C ase Temperatu r e
0
4
8
12
16
20
24
28
32
36
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA32N20T
IXTP32N20T
Fig. 7. Input Adm ittance
0
10
20
30
40
50
60
70
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GS
- Volts
I
D
- Amperes
T
J
= - 40ºC
25ºC
150ºC
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
45
0 5 10 15 20 25 30 35 40 45 50 55 60 65
I
D
- Amperes
g
f s - Siemens
T
J
= - 40ºC
150ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
10
20
30
40
50
60
70
80
90
100
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fi g . 10. Gate C h ar ge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 100V
I
D
= 16A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limits
10ms
© 2010 IXYS CORPORATION, All Rights Reserved
IXTA32N20T
IXTP32N20T
Fi g . 14. R esi sti ve Tur n -o n R i se Time vs.
Drain Current
8
10
12
14
16
18
20
16 18 20 22 24 26 28 30 32
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 10
V
GS
= 15V
V
DS
= 100V
T
J
= 25ºC
T
J
= 125ºC
Fi g . 15. R esi sti ve Tur n -o n Swi tch i n g Times vs.
Gate R esi sta n ce
0
5
10
15
20
25
30
35
40
45
10 14 18 22 26 30 34 38 42 46 50
R
G
- Ohms
t
r
- Nanoseconds
13
14
15
16
17
18
19
20
21
22
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 100V
I
D
= 16A
I
D
= 32A
Fi g . 16. R esi sti ve Tur n -o ff Swi tch i n g Times vs.
Junction T emperature
16
18
20
22
24
26
28
30
32
34
36
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
44
46
48
50
52
54
56
58
60
62
64
t d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10, V
GS
= 15V
V
DS
= 100V
I
D
= 16A
I
D
= 32A
Fi g . 17. R esi sti ve Tur n -o ff Swi tch i n g Times vs.
Dr ai n C urr en t
14
18
22
26
30
34
38
16 18 20 22 24 26 28 30 32
I
D
- Amperes
t
f
- Nanoseconds
46
48
50
52
54
56
58
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10, V
GS
= 15V
V
DS
= 100V
T
J
= 25ºC
T
J
= 125ºC
Fi g . 13. R esi sti ve Tur n -o n R i se Time vs.
Junction T em perature
8
10
12
14
16
18
20
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 10
V
GS
= 15V
V
DS
= 100V
16A < I
D
< 32A
Fig. 18. Resi s ti ve Tur n-o ff S wi t ch i ng Ti mes vs.
Gate Resi stan ce
0
10
20
30
40
50
60
70
80
90
100
10 14 18 22 26 30 34 38 42 46 50
R
G
- Ohms
t
f
- Nanoseconds
10
30
50
70
90
110
130
150
170
190
210
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 100V
I
D
= 32A
I
D
= 16A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA32N20T
IXTP32N20T
IXYS REF: IXT_32N20T (3G)4-14-10-A
Fi g . 19. Maxi mum Tran si en t Ther mal I mpedan ce
0.01
0.10
1.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - ºC / W
