GaN Wideband Transistor 28 V, 4 W
DC - 6 GHz
Rev. V1
MAGX-011086
1
1
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
* Restrictions on Hazardous Substances, European Union
Directive 2011/65/EU.
Ordering Information
Part Number Package
MAGX-011086 Bulk Quantity
MAGX-011086-SMBPPR Sample Board
GaN on Si HEMT D-Mode Transistor
Suitable for linear and saturated applications
Tunable from DC - 6 GHz
28 V Operation
9 dB Gain at 5.8 GHz
45% Drain Efficiency at 5.8 GHz
100% RF Tested
Thermally-Enhanced 4 mm 24-Lead QFN
RoHS* Compliant
Description
The MAGX-011086 GaN HEMT is a wideband
transistor optimized for DC - 6 GHz operation in a
user friendly package ideal for high bandwidth
applications. The device has been designed for
saturated and linear operation with output power
levels of 4 W (36 dBm) in an industry standard, low
inductance, surface mount QFN package. The pads
of the package form a coplanar launch that naturally
absorbs lead parasitics and features a small PCB
outline for space constrained applications.
The MAGX-011086 is ideally suited for Wireless
LAN, High Dynamic Range LNA’s, broadband
general purpose, land mobile radio, defense
communications, wireless infrastructure, and ISM
applications.
Built using the SIGANTIC® process - a proprietary
GaN-on-Silicon technology.
Pin Configuration1
Functional Schematic
Pin No. Pin Name Function
1 - 2 N/C No Connection
3 - 4 RFIN / VG RF Input / Gate
5 -14 N/C No Connection
15 - 16 RFOUT / VD RF Output / Drain
17 - 24 N/C No Connection
25 Paddle2 Ground / Source
1. All no connection pins may be left floating or grounded.
2. The exposed pad centered on the package bottom must be
connected to RF and DC ground and provide a low thermal
resistance heat path.
Features
N/C
Input
Match
RFIN / VG
RFIN / VG
N/C
N/C
N/C
12
11
10
9
87
6
5
4
3
2
1N/C
RFOUT / VD
RFOUT / VD
N/C
N/C
N/C
13
14
15
16
17
18
N/C N/C N/C N/C N/C N/C
19
20
21
22
2324
N/C N/C N/C N/C N/C N/C
25
Paddle
GaN Wideband Transistor 28 V, 4 W
DC - 6 GHz
Rev. V1
MAGX-011086
2
2
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
RF Electrical Specifications: TA = 25C, VDS = 28 V, IDQ = 50 mA
Parameter Test Conditions Symbol Min. Typ. Max. Units
Small Signal Gain CW, 5.8 GHz GSS - 11 - dB
Saturated Output Power CW, 5.8 GHz PSAT - 37 - dBm
Drain Efficiency at Saturation CW, 5.8 GHz hSAT - 50 - %
Power Gain 5.8 GHz, POUT = 4 W GP 8 9 - dB
Drain Efficiency 5.8 GHz, POUT = 4 W h 40 45 - %
Ruggedness: Output Mismatch All phase angles Y VSWR = 10:1, No Device Damage
DC Electrical Characteristics: TA = 25C
Parameter Test Conditions Symbol Min. Typ. Max. Units
Drain-Source Leakage Current VGS = -8 V, VDS = 100 V IDLK - - 2 mA
Gate-Source Leakage Current VGS = -8 V, VDS = 0 V IGLK - - 1 mA
Gate Threshold Voltage VDS = +28 V, ID = 2 mA VT -2.5 -1.5 -0.5 V
Gate Quiescent Voltage VDS = +28 V, ID = 50 mA VGSQ -2.1 -1.2 -0.3 V
On Resistance VDS = +2 V, ID = 15 mA RON - 2.0 - W
Saturated Drain Current VDS = 7 V, Pulse Width 300 µs ID(SAT) - 1.4 - A
GaN Wideband Transistor 28 V, 4 W
DC - 6 GHz
Rev. V1
MAGX-011086
3
3
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Parameter Absolute Max.
Drain-Source Voltage, VDS 100 V
Gate-Source Voltage, VGS -10 V to 3 V
Gate Current, IG 4 mA
Junction Temperature, TJ +200°C
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
Absolute Maximum Ratings3,4, 5
3. Exceeding any one or combination of these limits may cause permanent damage to this device.
4. MACOM does not recommend sustained operation near these survivability limits.
5. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Nitride Integrated Circuits are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these class 1A
devices.
Thermal Characteristics6, 7
Parameter Test Conditions Symbol Typ. Units
Thermal Resistance VDS = 28 V, TJ = 200°C ӨJC 12.5 °C/W
6. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple
embedded in heat-sink.
7. The thermal resistance of the mounting configuration must be added to the device ӨJC, for proper TJ calcula-
tion during operation. The recommended via pattern, shown on page 6, on a 20 mil thick, 1oz plated copper,
PCB contributes an additional 6.6 °C/W to the typical value.
GaN Wideband Transistor 28 V, 4 W
DC - 6 GHz
Rev. V1
MAGX-011086
4
4
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Load-Pull Performance: VDS = 28 V, IDQ = 50 mA, TA = 25°C
Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance
Frequency
(MHz)
ZS
(W)
ZL
(W)
PSAT
(W)
GSS
(dB)
Drain Efficiency
@ PSAT (%)
900 4.0 + j8.4 31.9 + j41.2 5.8 24.6 65
2500 4.0 - j13.1 12.5 + j18.0 5.1 19.5 63
3500 6.8 - j26.8 10.1 + j9.3 5.0 16.0 57
4000 13.4 - j37.8 9.5 + j4.7 5.0 15.3 56
5000 67.4 - j33.2 8.2 + j1.2 5.0 13.8 55
5800 19.4 + j0.5 7.7 - j8.4 5.0 12.0 55
Impedance Reference
ZSZL
ZS and ZL vs. Frequency
GaN Wideband Transistor 28 V, 4 W
DC - 6 GHz
Rev. V1
MAGX-011086
5
5
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Load-Pull Performance: VDS = 28 V, IDQ = 50 mA, TA = 25°C
Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance
Gain vs. Output Power Drain Efficiency vs. Output Power
10
15
20
25
30
20 25 30 35 40
900 MHz
2500 MHz
3500 MHz
Gain (dB)
Output Power (dBm)
0
10
20
30
40
50
60
70
20 25 30 35 40
900 MHz
2500 MHz
3500 MHz
Drain Efficiency (%)
Output Power (dBm)
Gain vs. Output Power Drain Efficiency vs. Output Power
0
10
20
30
40
50
60
70
20 25 30 35 40
4000 MHz
5000 MHz
5800 MHz
Drain Efficiency (%)
Output Power (dBm)
5
10
15
20
20 25 30 35 40
4000 MHz
5000 MHz
5800 MHz
Gain (dB)
Output Power (dBm)
GaN Wideband Transistor 28 V, 4 W
DC - 6 GHz
Rev. V1
MAGX-011086
6
6
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Evaluation Board and Recommended Tuning Solution
5.8 GHz Narrowband Circuit
Parts measured on evaluation board (20-mil thick
RO4350). The PCB’s electrical and thermal ground
is provided using a standard-plated densely packed
via hole array (see recommended via pattern).
Matching is provided using a combination of
lumped elements and transmission lines as shown
in the simplified schematic above. Recommended
tuning solution component placement, transmission
lines, and details are shown on the next page.
Description
Turning the device ON
1. Set VGS beyond pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (28 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
Bias Sequencing
Recommended Via Pattern (All dimensions shown as inches)
C15
1.2 pF
C4
1000 pF
C3
0.01 mF
C2
0.1 mF
C1
1.0 mF
VGS VDS
C16
3.3 pF
RF
Out
MAGX-011086
C5
1.0 mF
C6
0.1 mF
C7
0.01 mF
C8
1000pF
C14
0.5 pF
RF
In
C9
4.7 pF
C10
3.3 pF
C11
3.3 pF
R1
200 W
C17
0.3 pF
C12
3.3 pF
C13
0.2 pF
GaN Wideband Transistor 28 V, 4 W
DC - 6 GHz
Rev. V1
MAGX-011086
7
7
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Reference Value Tolerance Manufacturer Part Number
C1, C5 1.0 µF 10 % AVX 12101C105KAT2A
C2, C6 0.1 µF 10 % Kemet C1206C104K1RACTU
C3, C7 0.01 µF 10 % AVX 12061C103KAT2A
C4, C8 1000 pF 10 % Kemet C0805C102K1RACTU
C9 4.7 pF 0.1 pF ATC ATC800A4R7B250
C10, C11, C12, C16 3.3 pF 0.1 pF ATC ATC800A3R3B250
C13 0.2 pF 0.1 pF ATC ATC800A0R2B250
C14 0.5 pF 0.1 pF ATC ATC800A0R5B250
C15 1.2 pF 0.1 pF ATC ATC800A1R2B250
C17 0.3 pF 0.1 pF ATC ATC800A0R3B250
R1 200 Ω 1 % Panasonic ERJ-6ENF2000V
RF Connector SMA Amphenol-Connex 132150
DC Connector D-Subminiature ERNI 284525
PCB RO4350 Rogers Corp
Evaluation Board and Recommended Tuning Solution
5.8 GHz Narrowband Circuit
Parts list
GaN Wideband Transistor 28 V, 4 W
DC - 6 GHz
Rev. V1
MAGX-011086
8
8
8
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Typical Performance as measured in the 5.8 GHz evaluation board:
CW, VDS = 28 V, IDQ = 50 mA (unless noted)
Gain vs. Output Power over Temperature Drain Efficiency vs. Output Power over Temperature
Quiescent VGS vs. Temperature
2
4
6
8
10
12
14
15 20 25 30 35 40
+25°C
-40°C
+85°C
Gain (dB)
Output Power (dBm)
0
10
20
30
40
50
15 20 25 30 35 40
+25°C
-40°C
+85°C
Drain Efficiency (%)
Output Power (dBm)
-1.6
-1.5
-1.4
-1.3
-1.2
-1.1
-1.0
-50 -25 0 25 50 75 100
25 mA
50 mA
75 mA
VGSQ (V)
Temperature (°C)
GaN Wideband Transistor 28 V, 4 W
DC - 6 GHz
Rev. V1
MAGX-011086
9
9
9
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
2-Tone IMD vs. Output Power
2-Tone IMD3 vs. Output Power vs. Quiescent Current 2-Tone Gain vs. Output Power vs. Quiescent Current
Typical 2-Tone Performance as measured in the 5.8 GHz evaluation board:
1 MHz Tone Spacing, VDS = 28 V, IDQ = 50 mA, TA = 25°C (unless noted)
-60
-50
-40
-30
-20
-10
0.1 1 10
-IMD3
+IMD3
-IMD5
+IMD5
-IMD7
+IMD7
IMD (dBc)
POUT (W-PEP)
-45
-40
-35
-30
-25
-20
-15
-10
0.1 1 10
13mA
25mA
38mA
50mA
75mA
IMD (dBc)
POUT (W-PEP)
GaN Wideband Transistor 28 V, 4 W
DC - 6 GHz
Rev. V1
MAGX-011086
10
10
10
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Lead Free 4 mm 24 Lead QFN Plastic Package†
† Meets JEDEC moisture sensitivity level 3 requirements.
Plating is Matte Sn
All dimensions shown as inches [millimeters]