BFR94AW - NXP - Datasheet.Live

1. Product profile

1.1 General description

Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. The

BFR94AW uses the same crys tal as the SOT23 versio n , BFR94 A .

1.2 Features and benefits

High power gain

Gold metallization ensures excellent reliability

AEC-Q101 qualified

1.3 Applications

RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz

1.4 Quick reference data

BFR94AW

NPN 5 GHz wideband transistor

Rev. 1 — 29 October 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCBO collector-base vo ltage open emitter - - 20 V

VCEO collector-emitter voltage open base - - 15 V

ICcollector current - - 25 mA

Ptot total power dissipation Tsp ≤93 °C - - 300 mW

hFE DC current gain IC=15mA; V

CE = 10 V 65 90 135

Cre feedback capacitance IC=0mA; V

CE =10V;

f=1MHz; T

amb =25°C-0.35- pF

fTtransition frequency IC=15mA; V

CE =10V;

f=500MHz 3.5 5 - GHz

GUM unilateral power gain IC=15mA; V

CE =10V;

Tamb =25°C

f=1GHz - 14 - dB

f=2GHz - 8 - dB

NF noise figure IC=5mA; V

CE =10V;

f=1GHz; ΓS=Γopt

-2- dB

Tjjunction temperature - - 150 °C

Product data sheet Rev. 1 — 29 October 2010 2 of 15

NXP Semiconductors BFR94AW

NPN 5 GHz wideband transistor

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

[1] Tsp is the temperature at the solder point of the collector pin.

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1base

2emitter

3 collector

sym02

Table 3. Orderin g i nformation

Type number Package

Name Description Version

BFR94AW - plastic surface-mounted package; 3 leads SOT323

Table 4. Marking

Type number Marking code Description

BFR94AW XG* * = p : made in Hong Kong

* = t : made in Malaysia

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 20 V

VCEO collector-emitter voltage open base - 15 V

VEBO emitter-base voltage open collector - 2 V

ICcollector current - 25 mA

Ptot total power dissipation Tsp ≤93 °C; see Figure 1 [1] -300mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature - +150 °C

Product data sheet Rev. 1 — 29 October 2010 3 of 15

NXP Semiconductors BFR94AW

NPN 5 GHz wideband transistor

6. Thermal characteristics

[1] Tsp is the temperature at the solder point of the collector pin.

7. Characteristics

[1] GUM is the maximum unilateral power gain, assuming S12 is zero and

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-sp) thermal resistance from junction to

solder point Tsp ≤93 °C[1] 190 K/W

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base cut-off current IE=0A; V

CB =10V --50nA

hFE DC current gain IC=15mA; V

CE = 10 V 65 90 135

Cccollector capacitance IE=i

e=0A; V

CB =10V; f=1MHz - 0.6 - pF

Ceemitter capacitance IC=i

c=0A; V

EB = 0.5 V; f = 1 MHz - 0.9 - pF

Cre feedback capacitance IC=0mA; V

CE =10V; f= 1MHz;

Tamb =25°C-0.35-pF

fTtransition frequency IC=15mA; V

CE = 10 V; f = 500 MHz 3.5 5 - GHz

GUM unilateral power gain IC=15mA; V

CE =10V; T

amb =25°C[1]

f=1GHz - 14 - dB

f=2GHz - 8 - dB

NF noise figure IC=5mA; V

CE =10V; ΓS=Γopt

f=1GHz - 2 - dB

f=2GHz - 3 - dB

GUM 10 S21 2

11 2)1S

22 2)–(–(

-------------------------------------------------------- dB.log=

Product data sheet Rev. 1 — 29 October 2010 4 of 15

NXP Semiconductors BFR94AW

NPN 5 GHz wideband transistor

VCE =10V.

Fig 1. Power derating curve Fig 2. DC current gain as a function of collector

current; typical values

IC=0mA; f=1MHz. V

CE = 5 V; f = 500 MHz; Tamb =25°C.

Fig 3. Feedback capacitance as a function of

collector-base voltage; typical values Fig 4. Transition frequency as a function of collector

current; typical values

Tsp (°C)

0 20015050 100

001aam902

200

100

300

400

Ptot

(mW)

001aam903

IC (mA)

0302010

120

hFE

VCB (V)

020168124

001aam904

0.4

0.6

0.2

0.8

1.0

Cre

(pF)

001aam905

(GHz)

IC (mA)

110

Product data sheet Rev. 1 — 29 October 2010 5 of 15

NXP Semiconductors BFR94AW

NPN 5 GHz wideband transistor

VCE = 10 V; f = 500 MHz. VCE =10V; f=1GHz.

Fig 5. Gain as a function of colle c tor cu rre nt; typical

values Fig 6. Gain as a function of collector current; typical

values

VCE =10V; I

C=5mA. V

CE =10V; I

C=5mA.

Fig 7. Gain as a function of frequency; typical values Fig 8. Minimum noise figure as a function of

frequency; typical values

IC (mA)

02015510

001aam906

gain

(dB)

MSG

GUM

IC (mA)

02015510

001aam907

gain

(dB)

MSG

GUM

f (MHz)

10 104

103

102

001aam908

gain

(dB)

MSG

GUM

Gmax

f (MHz)

10 104

103

102

001aam909

gain

(dB)

MSG

GUM

Gmax

Product data sheet Rev. 1 — 29 October 2010 6 of 15

NXP Semiconductors BFR94AW

NPN 5 GHz wideband transistor

VCE =10V. V

CE =10V.

Fig 9. Minimum noise figure as a func tio n of

collector current; typical values Fig 10. Minimum noise figure as a function of

frequency; typical values

001aam910

(dB)

IC (mA)

110

f = 2 GHz

1 GHz

500 MHz

001aam911

(dB)

f (MHz)

102104

103

IC = 15 mA

10 mA

5 mA

f = 500 MHz; VCE = 10 V; IC= 5 mA; ZO=50Ω.

Fig 11. Common emitter noise figure circles; typica l values

001aam912

90°

−90°

0.50.2

+0.2

−5

−2

−0.2

+0.5

−0.5

−1

110 0

0.2

0.6

0.4

0.8

1.0

−45°−135°

45°135°

180°0°

NFmin = 1.6 dB

Γopt

NF = 4 dB

NF = 3 dB

NF = 2 dB

Product data sheet Rev. 1 — 29 October 2010 7 of 15

NXP Semiconductors BFR94AW

NPN 5 GHz wideband transistor

f=1GHz; V

CE = 10 V; IC= 5 mA; ZO= 50 Ω.

(1) Γopt; NFmin =2.1dB

(2) NF = 2.5 dB

(3) NF = 3 dB

(4) NF = 4 dB

(5) Γms; Gmax = 15.7 dB

(6) G = 15 dB

(7) G = 14 dB

(8) G = 13 dB

Fig 12. Common emitter no ise figure circles; typical values

001aam913

90°

−90°

0.2

−5

−2

−0.2

+0.5

−0.5

−1

110 0

0.2

0.6

0.4

0.8

1.0

−45°−135°

45°135°

180°0°

(8)

(7)

(6)

(5)

(4)

(3)

(2)

(1)

+0.2

0.5

Product data sheet Rev. 1 — 29 October 2010 8 of 15

NXP Semiconductors BFR94AW

NPN 5 GHz wideband transistor

f=2GHz; V

CE = 10 V; IC= 5 mA; ZO=50Ω.

(1) Γopt; NFmin =3dB

(2) NF = 3.5 dB

(3) NF = 4 dB

(4) NF = 5 dB

(5) Γms; Gmax =9.1dB

(6) G = 8 dB

(7) G = 7 dB

(8) G = 6 dB

Fig 13. Common emitter no ise figure circles; typical values

001aam914

90°

−90°

0.5

−5

−2

+0.5

−0.5

−1

110 0

0.2

0.6

0.4

0.8

1.0

−45°−135°

45°135°

180°0°

(8)

(7)

(6)

(5)

(4)

(3)

(2)

(1)

+0.2

−0.2

0.2

Product data sheet Rev. 1 — 29 October 2010 9 of 15

NXP Semiconductors BFR94AW

NPN 5 GHz wideband transistor

VCE = 10 V; IC= 15 mA; ZO=50Ω.

Fig 14. Common emitter input reflection coefficient (S11); typical values

VCE = 10 V; IC= 15 mA.

Fig 15. Common emitter forward transmission coefficient (S21); typical values

001aam915

90°

−90°

0.50.2

+0.2

−5

−2

−0.2

+0.5

−0.5

−1

110 0

0.2

0.6

0.4

0.8

1.0

−45°−135°

45°135°

180°0°

3 GHz

40 MHz

001aam916

90°

−90°

−45°−135°

45°135°

0°

180°50 40 30 20 10 0

3 GHz

40 MHz

Product data sheet Rev. 1 — 29 October 2010 10 of 15

NXP Semiconductors BFR94AW

NPN 5 GHz wideband transistor

VCE = 10 V; IC= 15 mA.

Fig 16. Common emitter reverse tran smission coefficient (S12); typical values

VCE = 10 V; IC= 15 mA.

Fig 17. Common emitter output reflection coefficient (S22); typical values

001aam917

90°

−90°

−45°−135°

45°135°

0°

180°0.25 0.20 0.15 0.10 0.05 0

3 GHz

40 MHz

001aam918

90°

−90°

0.50.2

+0.2

−5

−2

−0.2

+0.5

−0.5

−1

110 0

0.2

0.6

0.4

0.8

1.0

−45°−135°

45°135°

180°0°

3 GHz

40 MHz

Product data sheet Rev. 1 — 29 October 2010 11 of 15

NXP Semiconductors BFR94AW

NPN 5 GHz wideband transistor

8. Package outline

Fig 18. Package outline SOT323

UNIT A1

max bpcD Ee1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.1

1.1

0.8

0.4

0.3

0.25

0.10

2.2

1.8

1.35

1.15 0.65

1.3 2.2

2.0

0.23

0.13 0.20.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT323 SC-70

detail X

vMA

0 1 2 mm

scale

Plastic surface-mounted package; 3 leads SOT32

04-11-04

06-03-16

Product data sheet Rev. 1 — 29 October 2010 12 of 15

NXP Semiconductors BFR94AW

NPN 5 GHz wideband transistor

9. Abbreviations

10. Revision history

Table 8. Abbreviations

Acronym Description

MSG Maximum Stable Gain

NPN Negative Positive Negative

RF Radio Frequency

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BFR94AW v.1 20101029 Product data sheet - -

Product data sheet Rev. 1 — 29 October 2010 13 of 15

NXP Semiconductors BFR94AW

NPN 5 GHz wideband transistor

11. Legal information

11.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product st atus of de vice(s) d escribed in th is docume nt may have cha nged since thi s docume nt was publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

11.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

Product specificat io n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

11.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidenta l ,

punitive, special or consequ ential damages (including - wit hout limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

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Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconduct ors’ aggregate and cumulat ive liability toward s

customer for the products described herein shall be limited in accordance

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Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

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safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Custo mers should provide appropriate

design and operating safeguards to minimize the risks associated with t heir

applications and products.

NXP Semiconductors does not accept any liabil i ty related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party custo m er(s). Customer is responsible for doing all necessa ry

testing for the customer’s applications and pro ducts using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress rating s only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter m s and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or inte llectual property right s.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specificat ion.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 1 — 29 October 2010 14 of 15

NXP Semiconductors BFR94AW

NPN 5 GHz wideband transistor

Quick reference data — The Quick reference dat a is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It i s neit her qualif ied nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standards, custome r

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconduct ors for an y

liability, damages or failed product claims resulting from customer design an d

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

11.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

12. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BFR94AW

NPN 5 GHz wideband transistor

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 29 October 2010

Document identifier: BFR94AW

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

13. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11

9 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

12 Contact information. . . . . . . . . . . . . . . . . . . . . 14

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15