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DATA SH EET
Product data sheet
Supersedes data of 1999 Feb 09 2004 Jan 26
DISCRETE SEMICONDUCTORS
BAS321
General purpose diode
2004 Jan 26 2
NXP Semiconductors Product data sheet
General purpose diode BAS321
FEATURES
Small plastic SMD package
Switching speed: max. 50 ns
General application
Continuous reverse voltage: max. 200 V
Repetitive peak reverse voltage: max. 250 V
Repetitive peak forward current: max. 625 mA.
APPLICATIONS
General purpose s witc hing in e.g. surface mounte d
circuits.
DESCRIPTION
The BAS321 is a general purpose diode fabric ated in
planar technology and encaps ulated in a plastic SOD323
package.
PINNING
PIN DESCRIPTION
1cathode
2anode
Fig.1 Simplified outline (SO D3 23) and symbol.
Marking code: A7
The marking bar indicates the cathode.
handbook, halfpage
12
MAM406
ORDERING INFORMATION
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
Note
1. Device mounted on an FR4 printed circuit-boa rd.
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
BAS321 plastic surface mounted package; 2 leads SOD323
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage 250 V
VRcontinuous revers e voltage 200 V
IFcontinuous forward current see Fig.2; note 1 250 mA
IFRM repetitive peak forward current tp < 0.5 ms; δ ≤ 0.25 625 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs9 A
t = 100 µs3 A
t = 10 ms 1.7 A
Ptot total power dissipation Tamb = 25 °C; note 1 300 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
2004 Jan 26 3
NXP Semiconductors Pr oduct dat a shee t
General purpose diode BAS321
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
THERMAL CHARACTE RISTICS
Notes
1. Soldering point of cathode tab.
2. Device mounted on an FR4 printed circuit boar d.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VFforward voltage see Fig.3
IF = 100 mA 1 V
IF = 200 mA 1.25 V
IRreverse current see Fig.5
VR = 200 V 100 nA
VR = 200 V; Tj = 150 °C100 µA
Cddiode capacit an ce f = 1 MHz; VR = 0; see Fig.6 2pF
trr reverse recove ry time when switched from IF = 30 mA to
IR = 30 mA; RL = 100 ; measured at
IR = 3 mA; see Fig.8
50 ns
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-s) thermal resistance from junction to soldering point Ts = 90°C; note 1 130 K/W
Rth(j-a) thermal resistance from junction to ambient note 2 366 K/W
2004 Jan 26 4
NXP Semiconductors Pr oduct dat a shee t
General purpose diode BAS321
GRAPHICAL DATA
Fig.2 Maximum permissible continuous
forward curren t as a function of
ambient temperat ure.
Device mounted on an FR4 printed-circuit board.
handbook, halfpage
0 50 100 200
Tamb (°C)
IF
(mA)
300
0
100
200
150
MBK927
Fig.3 Forward current as a function of
forward voltage.
handbook, halfpage
02
600
IF
(mA)
0
200
400
MBG384
1VF (V)
(1) (3)(2)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of p uls e duration.
Based on square wave currents.
Tj = 25 °C prior to surge.
handbook, full pagewidth
MBG703
10 tp (µs)
1
IFSM
(A)
102
101104
102103
10
1
2004 Jan 26 5
NXP Semiconductors Pr oduct dat a shee t
General purpose diode BAS321
Fig.5 Reverse current as a fun ction of junc tion
temperature.
(1) VR = VRmax; maximum values.
(2) VR = VRmax; typical values.
handbook, halfpage
10
2
10
200
0
MBG381
100 Tj (
o
C)
IR
(µA)
1
10
2
10
1
(1) (2)
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj = 25 °C.
handbook, halfpage
04862
1.0
0.8
0.2
0.6
0.4
MBG447
VR (V)
Cd
(pF)
Fig.7 Maximum permissible continuous
reverse voltage as a function of the
ambient temperat ure.
handbook, halfpage
0 50 100 200
Tamb (°C)
VR
(V)
300
0
100
200
150
MBK926
2004 Jan 26 6
NXP Semiconductors Pr oduct dat a shee t
General purpose diode BAS321
Fig.8 Reverse recovery time and waveforms.
(1) IR = 3 mA
Input signal: reverse pulse rise time tr = 0.6 ns; revers e voltage pulse duration tp = 100 ns; duty factor δ = 0.05;
Oscilloscope: rise time tr = 0.35 ns;
Circuit capacitance C 1 pF (oscilloscope input + parasitic capacitance)
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SIF
D.U.T.
R = 50
i
SAMPLING
OSCILLOSCOPE
MGA881
2004 Jan 26 7
NXP Semiconductors Pr oduct dat a shee t
General purpose diode BAS321
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOD323 SC-76
SOD32
3
03-12-17
06-03-16
Note
1. The marking bar indicates the cathode
UNIT A
mm 0.05
1.1
0.8 0.40
0.25 0.25
0.10 1.8
1.6 1.35
1.15 2.7
2.3 0.45
0.15
A1
max
DIMENSIONS (mm are the original dimensions)
P
lastic surface-mounted package; 2 leads
01
(1)
21
2 mm
scale
bpc D E HDQ
0.25
0.15
Lpv
0.2
A
D
A
E
Lp
bp
detail X
A1c
Q
HDvA
M
X
2004 Jan 26 8
NXP Semiconductors Pr oduct dat a shee t
General purpose diode BAS321
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s ) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
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consequenc es of use of such information.
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modificat ion .
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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case of any incons istency or conflict betw een information
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described herein may be subject to export control
regulations. Export might require a prior authorization from
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this documen t d oes not form part o f an y q uot ation or co ntract, is believed to b e a ccur ate a nd reliable and may be change d
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R76/02/pp9 Date of release: 2004 Jan 26 Document orde r number: 9397 750 12589