Product Data Sheet
1
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-networks@tqs.com
January 2013 © Rev B
Product Description
The TriQuint TGA2503-SM is a Ku-Band
Packaged Power Amplifier. The TGA2503-
SM operates from 12.5-16 GHz and is
designed using TriQuint’s proven standard
0.5-um power pHEMT production process.
The TGA2503-SM typically provides
32 dBm of saturated output power with
small signal gain of 32 dB.
The TGA2503-SM is ideally suited for the
VSAT ground terminal market and Point-to-
Point Radio.
Evaluation Boards are available upon
request.
Lead-free and RoHS compliant
Primary Applications
•Ku-Band VSAT
•Point-to-Point Radio
32 dBm Ku-Band Amplifier TGA2503-SM
Measured Performance
Bias Conditions: Vd = 6 V, Idq = 600 mA
Key Features
•Typical Frequency Range: 12.5 - 16 GHz
•32 dBm Nominal Psat
•32 dB Nominal Gain
•37 dBm Output TOI @ Pin = -20dBm
•8 dB Typical Return Loss
•Bias Conditions: Vd = 6V, Idq = 600 mA
(Id = 1200mA under RF drive)
•Package Dimensions: 4.0 x 4.0 x 0.9 mm
Datasheet is subject to change without notice.
Product Data Sheet
2
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-networks@tqs.com
January 2013 © Rev B
TGA2503-SM
Symbol Parameter Value Notes
Vd-Vg Drain to Gate Voltage 13 V
Vd Drain Voltage 8 V 2/
Vg Gate Voltage Range -5 to 0 V
Id Drain Current 1300 mA 2/
Ig Gate Current Range -18 to 18 mA
Pin Input Continuous Wave Power 21 dBm 2/
Tchannel Channel Temperature 200 °C
Table I
Absolute Maximum Ratings 1/
1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed
under “Absolute Maximum Ratings” may cause permanent damage to the device and/or affect device
lifetime. These are stress ratings only, and functional operation of the device at these conditions is
not implied.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the
maximum power dissipation listed in Table IV.
Symbol Parameter Value
Vd Drain Voltage 6 V
Idq Drain Current 600 mA
Id_Drive Drain Current under RF Drive 1200 mA
Vg Gate Voltage -0.6 V
Table II
Recommended Operating Conditions
Product Data Sheet
3
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-networks@tqs.com
January 2013 © Rev B
TABLE III
RF CHARACTERIZATION TABLE
(T
A
= 25°C, Nominal)
Bias Conditions: Vd = 6V, Idq = 600mA
SYMBOL PARAMETER TEST CONDITION NOMINAL * UNITS
Gain Small Signal Gain f = 12.5 – 16 GHz 32 dB
IRL
Input Return Loss f = 12.5 – 16 GHz 10 dB
ORL
Output Return Loss f = 12.5 – 16 GHz 8 dB
NF Noise Figure f = 12.5 – 16 GHz 9
dB
Psat Saturated Output Power f = 12.5 – 16 GHz
f = 13.75 – 14.5 GHz
31
32 dBm
TOI Third Order Intercept @
Pin = -20dBm f = 12.5 – 16 GHz 36 dBm
* Note:
All measured data is taken using connectorized evaluation boards. The reference
plane is at RF connectors, and hence connector and board loss has not been de-
embedded.
TGA2503-SM
Product Data Sheet
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TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-networks@tqs.com
January 2013 © Rev B
Table IV
Power Dissipation and Thermal Properties
Parameter Test Conditions Value
Maximum Power Dissipation Tbaseplate = 85 ºC Pd = 8.1 W
Tchannel = 200 ºC
Thermal Resistance, θjc Vd = 6 V
Id = 600 mA
Pd = 3.6 W
Tbaseplate = 85 ºC
θjc = 14.2 (ºC/W)
Tchannel = 136 ºC
Tm = 3.4E+6 Hrs
Thermal Resistance, θjc
Under RF Drive
Vd = 6 V
Id = 1200 mA
Pout = 32 dBm
Pd = 5.6 W
Tbaseplate = 85 ºC
θjc = 14.2 (ºC/W)
Tchannel = 165 ºC
Tm = 3.0E+5 Hrs
Mounting Temperature 30 Seconds 260 °C
Storage Temperature -65 to 150 ºC
Median Lifetime (Tm) vs. Channel Temperature
TGA2503-SM
Product Data Sheet
5
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-networks@tqs.com
January 2013 © Rev B
Measured Performance*
Bias Conditions: Vd = 6 V, Idq =600 mA
* Note:
All measured data is taken using connectorized evaluation boards. The reference
plane is at RF connectors, and hence connector and board loss has not been de-
embedded.
TGA2503-SM
Product Data Sheet
6
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-networks@tqs.com
January 2013 © Rev B
Measured Performance
Bias Conditions: Vd = 6 V, Idq =600 mA
* Note:
All measured data is taken using connectorized evaluation boards. The reference
plane is at RF connectors, and hence connector and board loss has not been de-
embedded.
TGA2503-SM
Product Data Sheet
7
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-networks@tqs.com
January 2013 © Rev B
Measured Performance
Bias Conditions: Vd = 6 V, Idq = 600 mA
* Note:
All measured data is taken using connectorized evaluation boards. The reference
plane is at RF connectors, and hence connector and board loss has not been de-
embedded.
TGA2503-SM
Product Data Sheet
8
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-networks@tqs.com
January 2013 © Rev B
Measured Performance
Bias Conditions: Vd = 6 V, Idq =600 mA
* Note:
All measured data is taken using connectorized evaluation boards. The reference
plane is at RF connectors, and hence connector and board loss has not been de-
embedded.
TGA2503-SM
Product Data Sheet
9
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-networks@tqs.com
January 2013 © Rev B
Pin Description
1, 2, 4, 5, 6, 7, 9, 11, 13, 14,
15, 17, 18, 20, 22, 24
N/C
3RF Input
8Vg1
10 Vg2
12 Power Ref
16 RF Output
19 Vd2
21 Vd1
23 Ref
25 Gnd
Bottom ViewTop View
Dot indicates Pin 1
Package Pinout Diagram
13
12 11 910 8
18
14
15
16
17
19 20
25
2221 23
6
7
1
5
4
3
2
24
2503
Date Code
Lot Code
Parts manufactured after date code 0637 will use the marking plan shown.
Parts manufactured prior to this date use the marking plan shown in the
prior revision of this data sheet (May 2006)
TGA2503-SM
Product Data Sheet
10
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-networks@tqs.com
January 2013 © Rev B
Mechanical Drawing
Units: Millimeters
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA2503-SM
Product Data Sheet
11
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-networks@tqs.com
January 2013 © Rev B
Vd = 6V
4700 pF
100 pF
Vg = ~-0.6V to obtain
600mA drain current
4700 pF
100 pF
Tuning Stub
0
29
54
43
26
18
3
0
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
* This layout shows the tuning configuration used to obtain the measured data. The layout
configuration may vary depending on the specific application.
PCB is RO4003 8 mil thickness, 0.5 oz standard copper cladding, with Er = 3.38.
Recommended Board Layout Assembly *
Units: mils
T
u
0
29
54
43
26
18
3
0
TGA2503-SM
Product Data Sheet
12
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-networks@tqs.com
January 2013 © Rev B
Ordering Information
Part Package Style
TGA2503-SM QFN 24L 4x4 Surface Mount
Recommended Surface Mount Package Assembly
Proper ESD precautions must be followed while handling packages.
Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry.
TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven
vendors’ recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed
in the table below.
Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement.
The volume of solder paste depends on PCB and component layout and should be well controlled to
ensure consistent mechanical and electrical performance.
Clean the assembly with alcohol.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Typical Solder Reflow Profiles
Reflow Profile SnPb Pb Free
Ramp-up Rate 3 °C/sec 3 °C/sec
Activation Time and
Temperature 60 – 120 sec @ 140 – 160 °C 60 – 180 sec @ 150 – 200 °C
Time above Melting Point 60 – 150 sec 60 – 150 sec
Max Peak Temperature 240 °C 260 °C
Time within 5 °C of Peak
Temperature 10 – 20 sec 10 – 20 sec
Ramp-down Rate 4 – 6 °C/sec 4 – 6 °C/sec
TGA2503-SM
