08/2005
PRODUCT DESCRIPTION
As with previous generations, the AWT6171R
integrated CMOS power control scheme simplifies
the design of the transmitter by eliminating the need
for external power control circuitry.
The AWT6171R input and output terminals are
internal matched to 50 ohms and DC blocked at the
AWT6171R
GSM850/GSM900/DCS/PCS
Quad Band Power Amplifier Module
With Integrated Power Control
PRELIMINARY DATA SHEET - Rev 1.0
M15 Package
18 Pin 6 mm x 6 mm x 1.3 mm
Amplifier Module
FEATURES
• Integrated Vreg (regulated supply)
• Harmonic Performance ≤ -20 dBm
• High Efficiency (PAE) at Pmax:
-GSM850, 54 %
-GSM900, 55 %
-DCS, 52 %
-PCS, 52 %
• +34.5 dBm GSM850/900 Output Power at 3.5 V
• +31.5 dBm DCS/PCS Output Power at 3.5 V
• 55 dB Dynamic Range
• GPRS Class 12 Capable
• RoHS Compliant Package, 250°C MSL-3
APPLICATIONS
• Dual/Tri/Quad Band Handsets & PDAs
CMOS BIAS/Integrated Power Control
VCC2
H(s)
VCC2
DCS/PCSIN
GSM850/900IN GSM850/900OU
T
DCS/PCSOUT
VCC_OUT
BS
TX EN
VBATT
CEXT
VRAMP
MATCH
MATCH MATCH
MATCH
RF outputs, reducing the number of external
components required in the final application. Both
PA die, GSM850/900 and DCS/PCS, are fabricated
using state of the art InGaP HBT technology, known
for it is proven reliability and temperature stability.
Figure 1: Block Diagram
AWT6171R
2PRELIMINARY DATA SHEET - Rev 1.0
08/2005
AWT6171R
Table 1: Pin Description
Figure 2: Pinout (X- ray Top View)
VCC 2
DCS/PCS_IN
BS
T _EN
X
VBATT
VRAMP
GSM_IN
DCS/PCS_OUT
GSM_OUT
VCC_OUT
18
1
98
7
2
3
4
5
6
10
16
11
13
15
12
14
17
VCC 2
CEXT
GND
GND
GND
GND
GND
GND
NIP EMAN NOITPIRCSED NIP EMAN NOITPIRCSED
1NI_SCP/SCDtupnIFRSCP/SCD01TUO_MSGtuptuOFR009/058MSG
2SBtupnIcigoLtceleSdnaB11DNGdnuorG
3NE_xTtupnIcigoLelbanEXT21DNGdnuorG
4V
TTAB
ylppuSyrettaB
noitcennoC 31V
TUO_CC
tuptuOegatloVlortnoC
detcennocebtsumhcihw
Vot
2CC
5C
TXE
ssapyB41DNGdnuorG
6V
PMAR
otdesulangiSgolanA
rewoptuptuoehtlortnoc 51DNGdnuorG
7NI_MSGtupnIFR009/058MSG61TUO_SCP/SCDtuptuOFRSCP/SCD
8V
2CC
roftupnIlortnoCCCV
009/058MSG
reifilpma-erP
71DNGdnuorG
9DNGdnuorG81V
2CC
V
CC
roftupnIlortnoC
SCP/SCD
reifilpma-erP
PRELIMINARY DATA SHEET - Rev 1.0
08/2005
AWT6171R
3
Stresses in excess of the absolute ratings may cause
permanent damage. Functional operation is not implied under
these conditions. Exposure to absolute ratings for extended
periods of time may adversely affect reliability.
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Although protection circuitry has been designed into this device, proper precau-
tions should be taken to avoid exposure to electrostatic discharge (ESD) during
handling and mounting. Human body model HBM employed is resistance = 1500 ΩΩ
ΩΩ
Ω,
capacitance = 100 pF.
Table 3: ESD Ratings
RETEMARAP NIM XAM TINU
V(egatloVylppuS
TTAB
)-7+V
FR(rewoPtupnIFR
NI
)-11mBd
V(segatloVlortnoC
PMAR
)3.0-8.1V
T(erutarepmeTegarotS
GTS
)55-051C°
Table 5: Control Logic Table
Table 4: Digital Inputs
EDOM NE_xT SB
elbanEAPHGIHX
edoM009/058MSGHGIHWOL
edoMSCP/SCDHGIHHGIH
elbasiDAPWOLX
RETEMARAP DOHTEM GNITAR TINU
)stropFR(egatlovdlohserhTDSEMBH5.2>Vk
)stupnilortnoc(egatlovdlohserhTDSEMBH5.2>Vk
RETEMARAP NIM PYT XAM TINU
V(egatloVhgiHcigoL
HI
)2.1-0.3V
V(egatloVwoLcigoL
LI
)--5.0V
I(tnerruChgiHcigoL
HI
)--03Aµ
I(tnerruCwoLcigoL
LI
)--03Aµ
4PRELIMINARY DATA SHEET - Rev 1.0
08/2005
AWT6171R
Table 6: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is
guaranteed only over the conditions defined in the electrical specifications.
RETEMARAP NIM PYT XAM TINU STNEMMOC
T(erutarepmeTesaC
C
)02--58C°
V(egatloVylppuS
TTAB
)0.35.38.4V
tnerruCegakaeLylppuSrewoP-101Aµ
V
TTAB
,V8.4=
V
PMAR
,V0=
,WOL=NE_XT
deilppaFRoN
egnaRegatloVlortnoC2.0- 6.1V
T(emitnonruT
NO
)--1µs
V
PMAR
=NE_XT,V2.0=
WOL →hgiH
P
NI
mBd5=
T(emitffonruT
FFO
)--1µs
V
PMAR
=NE_XT,V2.0=
HGIH →WOL
P
NI
mBd5=
T(emiTesiR
ESIR
)--1µsP
TUO
mBd01-= →P
XAM
)Bd2.0nihtiw(
T(emiTllaF
LLAF
)--1µsP
TUO
P=
XAM
→mBd01-
)Bd2.0nihtiw(
V
PMAR
ecnaticapaCtupnI-3-Fp
V
PMAR
tnerruCtupnI--01Aµ
elcyCytuD--05
%
PRELIMINARY DATA SHEET - Rev 1.0
08/2005
AWT6171R
5
Table 7: Electrical Characteristics for GSM850
Unless otherwise stated (VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH)
RETEMARAP NIM PYT XAM TINU STNEMMOC
F(ycneuqerFgnitarepO
o
)428-948zHM
rewoPtupnI00.35 mBd
P,rewoPtuptuO
XAM
0.438.43-mBdzHM948ot428=qerF
rewoPtuptuOdedargeD0.238.23-mBd V
TTAB
T,V0.3=
C
58=
O
,C
P
NI
mBd0=
P@EAP
XAM
8445-% zHM948ot428=qerF
1noitalosIdrawroF-34-53-mBd V,WOL=NE_XT
PMAR
V2.0=
P
NI
,mBd5=
2noitalosIdrawroF-42-71-mBd V,HGIH=NE_XT
PMAR
,V2.0=
P
NI
mBd5=
noitalosIssorC
F2(
o
F3,
o
)troPSCP/SCD@ -82-02-mBdP
TUO
[mBd0.43
scinomraH
of3,of2
F*n
o
n(,> oF,)4 [zHG57.21
-
-
72-
03-
01-
01- mBdP
TUO
[mBd0.43
ytilibatS
P,sesahPllA1:8=RWSV
TUO
[mBd0.43
-- 63-mBdF
TUO
zHG1<
-- 03-mBdF
TUO
zHG1>
ssendegguR--1:01RWSV ,sesahpdaolllA
P
TUO
[mBd0.43
rewoPesioNXR-78-38-mBd
F
XT
,zHM948=
,zHk001=WBR
F
XR
,zHM498ot968=
P
TUO
[mBd0.43
RWSVtupnI-1:5.11:5.2-P
TUO
[mBd0.43
6PRELIMINARY DATA SHEET - Rev 1.0
08/2005
AWT6171R
Table 8: Electrical Characteristics for GSM900
Unless otherwise stated (VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH)
RETEMARAP NIM PYT XAM TINU STNEMMOC
F(ycneuqerFgnitarepO
o
)088-519zHM
rewoPtupnI00.35mBd
P,rewoPtuptuO
XAM
0.436.43-mBdzHM519ot088=qerF
rewoPtuptuOdedargeD0.236.23-mBd V
TTAB
T,V0.3=
C
58=
O
,C
P
NI
mBd0=
P@EAP
XAM
0555-% zHM519ot088=qerF
1noitalosIdrawroF-04-33-mBd V,WOL=NE_XT
PMAR
V2.0=
P
NI
,mBd5=
2noitalosIdrawroF-42-71-mBd V,HGIH=NE_XT
PMAR
,V2.0=
P
NI
mBd5=
noitalosIssorC
F2(
o
F3,
o
)troPSCP/SCD@ -92-02-mBdP
TUO
[mBd0.43
scinomraH
of3,of2
F*n
o
n(,> oF,)4 [zHG57.21
-
-
22-
03-
01-
01- mBdP
TUO
[mBd0.43
ytilibatS
P,sesahPllA1:8=RWSV
TUO
[mBd0.43
-- 63-mBdF
TUO
zHG1<
-- 03-mBdF
TUO
zHG1>
ssendegguR--1:01RWSV ,sesahpdaolllA
P
TUO
[mBd0.43
rewoPesioNXR
-48-77-mBd
F
XT
,zHM519=
,zHk001=WBR
F
XR
,zHM539ot529=
P
TUO
[mBd0.43
-78-38-mBd
F
XT
,zHM519=
,zHk001=WBR
F
XR
,zHM069ot539=
P
TUO
[mBd0.43
RWSVtupnI-1:5.11:5.2-P
TUO
[mBd0.43
PRELIMINARY DATA SHEET - Rev 1.0
08/2005
AWT6171R
7
Table 9: Electrical Characteristics for DCS
Unless otherwise stated (VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH)
RETEMARAP NIM PYT XAM TINU STNEMMOC
ycneuqerFgnitarepO0171-5871zHM
rewoPtupnI00.35mBd
P,rewoPtuptuO
XAM
5.132.23-mBdzHM5871ot0171=qerF
rewoPtuptuOdedargeD5.922.03-mBd V
TTAB
T,V0.3=
C
58=
O
,C
P
NI
mBd0=
P@EAP
XAM
5425-% zHM5871ot0171=qerF
1noitalosIdrawroF-83-33-mBd V,WOL=NE_XT
PMAR
V2.0=
P
NI
,mBd5=
2noitalosIdrawroF-12-61-mBd V,HGIH=NE_XT
PMAR
,V2.0=
P
NI
mBd5=
scinomraH
of3,of2
F*n
o
n(,> oF,)4 [zHG57.21
-
-
22-
02-
01-
8- mBdP
TUO
[mBd5.13
ytilibatS
P,sesahPllA1:8=RWSV
TUO
[mBd5.13
-- 63-mBdF
TUO
zHG1<
-- 03-mBdF
TUO
zHG1>
ssendegguR--1:01RWSV ,sesahpdaolllA
P
TUO
[mBd5.13
rewoPesioNXR-68-08-mBd
F
XT
,zHM5871=
,zHk001=WBR
F
XR
,zHM0881ot5081=
P
TUO
[mBd5.13
RWSVtupnI-1:5.11:5.2-P
TUO
[mBd5.13
8PRELIMINARY DATA SHEET - Rev 1.0
08/2005
AWT6171R
Table 10: Electrical Characteristics for PCS
Unless otherwise stated (VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH)
RETEMARAP NIM PYT XAM TINU STNEMMOC
ycneuqerFgnitarepO0581-0191zHM
rewoPtupnI00.35mBd
P,rewoPtuptuO
XAM
5.130.23-mBdzHM0191ot0581=qerF
rewoPtuptuOdedargeD5.920.03-mBd V
TTAB
T,V0.3=
C
58=
O
,C
P
NI
mBd0=
P@EAP
XAM
5425-% zHM0191ot0581=qerF
1noitalosIdrawroF-83-33-mBd V,WOL=NE_XT
PMAR
V2.0=
P
NI
,mBd5=
2noitalosIdrawroF-12-61-mBd V,HGIH=NE_XT
PMAR
,V2.0=
P
NI
mBd5=
scinomraH
of3,of2
F*n
o
n(,> oF,)4 [zHG57.21
-
-
02-
02-
01-
5- mBdP
TUO
[mBd5.13
ytilibatS
P,sesahPllA1:8=RWSV
TUO
[mBd5.13
-- 63-mBdF
TUO
zHG1<
-- 03-mBdF
TUO
zHG1>
ssendegguR--1:01RWSV ,sesahpdaolllA
P
TUO
[mBd5.13
rewoPesioNXR-68-08-mBd
F
XT
,zHM0191=
,zHk001=WBR
F
XR
,zHM0991ot0391=
P
TUO
[mBd5.13
RWSVtupnI-1:5.11:5.2-P
TUO
[mBd5.13
PRELIMINARY DATA SHEET - Rev 1.0
08/2005
AWT6171R
9
Figure 3: Application Schematic
APPLICATION INFORMATION
GSM850/900 RF OUTPUT
GSM850/900 RF INPUT
1
2
3
4
5
6
7
16
15
14
13
12
11
10
89
18 17
DCS/PCS_PIN
BS
TX_EN
V
BATT
C
EXT
V
RAMP
GSM_IN
V
CC2
V
CC2
GND
GND
GND
GND
GSM_OUT
VCC_OUT
GND
GND
DCS/PCS_OUT
AWT6171R
DCS/PCS RF INPUT
BAND SELECT
TX ENABLE
DAC OUTPUT
DCS/PCS RF OUTPUT
BATTERY
VOLTAGE
10K*27pF*
* Filtering may be required to filter noise from baseband.
** This component should be placed as close to the device pin as possible.
++ These components are recommended as good design practice for improving noise
rejection characteristics. The values specified are not critical as they may not be required in the
final application.
2.7pF**
47uF++
22nF**
1nF++
1nF++
1nF**
10 PRELIMINARY DATA SHEET - Rev 1.0
08/2005
AWT6171R
PACKAGE OUTLINE
Figure 4: M15 Package Outline - 18 Pin 6 mm x 6 mm x 1.3 mm Amplifier Module
Figure 5: Branding Specification
PRELIMINARY DATA SHEET - Rev 1.0
08/2005
AWT6171R
11
NOTES
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS
product in any such application without written consent is prohibited.
IMPORTANT NOTICE
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without
notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are
subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are
assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges
customers to verify that the information they are using is current before placing orders.
PRELIMINARY DATA SHEET - Rev 1.0
08/2005
12
AWT6171R
ORDERING INFORMATION
REBMUNREDRO ERUTAREPMET
EGNAR NOITPIRCSEDEGAKCAP GNIGAKCAPTNENOPMOC
8P51MR1716TWA02-
o
58+otC
o
CniP81tnailpmoCSHoR
mm3.1xmm6xmm6 leerrep0052,leeRdnaepaT
