2SA1252 / 2SC3134
No.1048-1/4
Features
•High VEBO.
•Wide ASO and high durability against breakdown.
Specifications ( ) : 2SA1252
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)60 V
Collector-to-Emitter Voltage VCEO (--)50 V
Emitter-to-Base Voltage VEBO (--)15 V
Collector Current IC(--)150 mA
Collector Current (Pulse) ICP (--)300 mA
Collector Dissipation PC200 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=(--)40V, IE=0A (--)0.1 µA
Emitter Cutoff Current IEBO VEB=(--)10V, IC=0A (--)0.1 µA
DC Current Gain hFE VCE=(--)6V, IC=(--)1mA 90* 600*
Gain-Bandwidth Product fTVCE=(--)6V, IC=(--)1mA 100 MHz
Output Capacitance Cob VCB=(--)6V, f=1MHz (3.5)2.2 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)50mA, IB=(--)5mA (--)0.5 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10µA, IE=0A (--)60 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, R BE=∞(--)50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10µA, IC=0A (--)15 V
Marking: 2SA1252:D
2SC3134: H
* : The 2SA1252 / 2SC3134 are classified by 1mA hFE as follws:
Rank 4 5 6 7
hFE 90 to 180 135 to 270 200 to 400 300 to 600
Ordering number : EN1048D
72606 / 31006CA MS IM 8-4698 / 70502TN (KT) / 71598HA (KT) / 3187AT / 3155MW, TS
2SA1252 / 2SC3134
PNP / NPN Epitaxial Planar Silicon Transistors
High VEBO, AF Amp Applications
SANYO Semiconductors
DATA SHEET
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
2SA1252 / 2SC3134
No.1048-2/4
Package Dimensions
unit : mm
7013A-009
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
12
3
1.5
2.5
1.1
0.3
0.05
2.9
0.95 0.4
0.1
0.5
0.5
IC -- VCE IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
IC -- VCE IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
ITR03076
0
--
0.2
--
0.4
--
0.6
--
0.8
--
1.0
0
--
10
--
20
--
30
--
40
--
50
IB=0µA
--200µA
--150µA
--100µA
--50µA
--250µA
2SA1252
From top
--500µA
--450µA
--400µA
--350µA
--300µA
ITR03078
0
--
10
--
20
--
30
--
40
--
50
0
--
4
--
8
--
12
--
16
--
20
IB=0µA
--70µA
2SA1252
ITR03077
0 0.2 0.4 0.6 0.8 1.0
0
10
20
30
40
50
IB=0µA
200µA
150µA
100µA
50µA
250µA
2SC3134
From top
500µA
450µA
400µA
350µA
300µA
--60µA
--50µA
--40µA
--30µA
--20µA
--10µA
ITR03079
01020304050
0
4
8
12
16
20
IB=0µA
70µA
2SC3134
60µA
50µA
40µA
30µA
20µA
10µA
2SA1252 / 2SC3134
No.1048-3/4
7
--
1.0 23 357
--
10 57
--
100
22
10
7
100
5
3
7
1000
5
3
2
2
ITR03084
2SA1252
VCE=
--
6V
Pulse
7
--
1.0 23 3557
--
10 57
--
100
2
1.0
7
10
5
3
3
2
2
ITR03086
2SA1252
f=
1MHz
71.0 23 3557
10 57
100
2
1.0
7
10
5
3
3
2
2
ITR03087
2SC3134
f=
1MHz
70.1 23 35710 57100
22
10
7
100
5
3
7
1000
5
3
2
2
ITR03085
2SC3134
VCE=6V
Pulse
1000
100
ITR03080
0
--
0.4
--
0.8
--
1.2
--
1.6
0
--
20
--
40
--
60
--
80
--
100 2SA1252
VCE= --6V
Pulse
ITR03082
25 25 2 25
--
0.1
--
1.0
--
10
--
100
2
3
5
7
2
3
5
72SA1252
VCE= --6V
Pulse
1000
100
ITR03083
25 25 2 25
0.1 1.0 10 100
2
3
5
7
2
3
5
7
2SC3134
VCE=6V
Pulse
ITR03081
0 0.4 0.8 1.2 1.6
0
20
40
60
80
100
2SC3134
VCE=6V
Pulse
hFE -- IChFE -- IC
IC -- VBE
IC -- VBE
Cob -- VCB
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
Collector Current, IC -- mA
DC Current Gain, hFE
Collector Current, IC -- mA
DC Current Gain, hFE
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
fT -- IC
Collector Current, IC -- mA
Gain-Bandwidth Product, fT -- MHz
Cob -- VCB
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
fT -- IC
Collector Current, IC -- mA
Gain-Bandwidth Product, fT -- MHz
2SA1252 / 2SC3134
No.1048-4/4PS
VCE(sat) -- IC
VCE(sat) -- IC
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
PC -- Ta
Ambient Temperature, Ta -- °C
Collector Dissipation, PC -- mW
0 20 40 60 80 100 120 140
0
40
80
200
120
160
240
ITR03090
ITR03088
57
--
10 2
--
1.0 23357
--
100 2
--
0.1
7
7
--
1.0
5
3
3
5
3
2
2
2SA1252
IC / IB=10
2SA1252 / 2SC3134
ITR03089
5710 2
1.0 23357
100 2
0.1
7
7
1.0
5
3
3
5
3
2
2
2SC3134
IC / IB=10
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