it Ww BD 175 - BD 177 - BD 179 Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: Audio-Verstarker, -Treiber und -Endstufen Allgemein im NF-Bereich Applications: Audio amplifier, driver and output stages General in AF-range Besondere Merkmale: Features: @ Hohe Spitzenleistung @ High peak power @ Verlustleistung 30 W @ Power dissipation 30 W @ Gepaart lieferbar @ Matched pairs available @ BD 175, BD 177, BD 179 sind komple- @ 8D 175, BD 177, BD 179 are comple- mentr zu BD 176, BD 178, BD 180 mentary to BD 176, BD 178, BD 180 Abmessungen in mm Dimensions inmm i 28 1 Koliektor mit metallischer Montageflache verbunden Collector connected with metallic surface Zubehr Accessories . Normgehause Isolierscheibe Case Isolating washer Best. Nr. 119880 12 A3 DIN 41869 JEDEC TO 126 (SOT 32) Unierlegscheibe Gewicht - Weight Washer 3,2 DIN 125A max. 0,8 g Absolute Grenzdaten BD 175 BD177 BD179 Absolute maximum ratings Kollektor-Basis-Sperrspannung UcsBo 45 60 80 Vv Collector-base voltage Kollektor-Emitter-Sperrspannung UcEO 45 60 80 Vv Collector-emitter voltage Emitter-Basis-Sperrspannung UVEBO 5 Vv Emitter-base voltage B 2/V.2.418/0475A1 25BD 175 - BD 177 - BD 179 Kollektorstrom Io 3 A Collector current Kollektorspitzenstrom Tom 6 A Collector peak current Basisstrom Ip 1 A Base current Gesamtverlustleistung Total power dissipation lease = 25 C Prot 30 Ww Sperrschichttemperatur 4 150 C Junction temperature Lagerungstemperaturbereich stg 55...+150 C Storage temperature range Anzugsdrehmoment M p3) 70 Ncm Tightening torque 31324 Th cane = 25 C c ease Ue 5 mit M8-Schraube und Unterlagscheibe with screw M3 and washer 3,2 DIN 1254 26BD 175 - BD 177 - BD 179 Warmewiderstande Thermal resistances Sperrschicht-Umgebung Junction ambient Sperrschicht-Gehaduse Junction case KenngrBen Characteristics lamb = 25C Kollektorreststrom Collector cut-off current Uca = 45V BD 175 UcsB = 60V BD 177 Ucs = 80V BD 179 Emitterreststrom Emitter cut-off current Kollektor-Emitter-Sperrspannung Collector-emitter sustaining voltage Ic = 100mA BD 175 BD 177 BD 179 Kollektor-Sattigungsspannung Collector saturation voltage Iq = 1A, Ip = 100mA Basis-Emitter-Spannung Base-emitter voltage Uce = 2Vi lo =1A Kollektor-Basis-Gleichstromverhaltnis DC forward current transfer ratio Uce = 2V.Io = 150mA UcE = 2 V, Ic = 1 A Fur Paare gilt das Are_Verhaltnis Are matched pair ratio UcE = 2V, Io = 150 mA}) Transitfrequenz Gain bandwidth product UceE = 10V, Io = 250 mA, f= 1 MHz h 1) + = 0,02, ty = 0,3ms Min. Rihua Rihuc TcBo IoBO TcBO TEBO UcEosus 1) 45 UcEOsus?) 60 UcEOsus 1) 80 UcEsat *) Upe*) hee?) 40 AFE*) 15 ST 3 Typ. Max. 100 4,16 100 100 100 800 1,3 236 14 C/W C/W mA <<< mV MHz 27BD 175 - BD 177 - BD 179 741870 ' "EEN he FE 5 Fen fgg (ig = 100 mA) Uge = 2 tease = 25C 1 0,5 0,1 0,05 28