BC 546 _ through BC 550 NPN SILICON AF SMALL SIGNAL TRANSISTORS THE BC546 THROUGH BC550 ARE NPN SILICON PLANAR CASE T0-92F EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL Ff AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. THEY ARE COMPLEMENTARY TO BC556 THROUGH BC560. THE BC549, BC550 ARE CHARACTERIZED BY LOW NOISE FIGURE. ey CEB ABSOLUTE MAXIMUM RATINGS BC546 BC547 BC548 BC549 BC550 Collector-Base Voltage VaBo 80V 50V 30V 30V 50V Collector-Emitter Voltage (VBE=0) VcRrs 80V 50V 30V 30V 50V Collector-Emitter Voltage (IB=0) VoEro 65V 45V 30 30V 45V Emitter-Base Voltage VERO 6V 6V 5V 5V 5V Collector Current . I 1O0mA Collector Peak Current Icom 200mA Total Power Dissipation (Ta<25C) Ptot 500mW ~ ~~ derate 4mW/C above 25C mt Operating Junction & Storage Temperature Tj, Tstg -55 to 150 a ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) - PARAMETER SYMBOL| MIN TYP MAX| UNIT| TEST: CONDTREONS | Collector-Base Breakdown Voltage BYcRO Ic=lOpa Ip=0 i. BC546 80 v BC547 50 v BC548 30 v BC549 30 Vv BC550 50 Vv Collector-Emitter Breakdown Voltage | BVore. | Tc=10pA VEE =0 - BC546 80 Vv BC547 50 Vv BC548 30 Vv BC549 30 Vv BC550 50 v Collector-Emitter Breakdown Voltage | LVcEo Iq=2ma(Pulsed) BC546 65 v Ip=0 BC547 45 Vv - oa, BC548 30 Vv . 3 BC549 30 Vv = BC550 45 Vv fl 38 HUNG TO ROAD, KWUN TONG, HONG KONG. TELEX 43510 MICRO ELECTRONICS LTD. (WUN TONG P. 0. BOXx68477 CABLE ADDRESS MICROTRON : FAX: 3~410324 %-~ - = Lontinued - - = PARAMETER SYMBOL MIN TYP MAX |UNIT) TEST CONDITIONS Emitter-Base Breakdown Voltage BVEBO Tg=1pA = Ic=0 ~*~! ; BC546 547 6 Vv fl BC548 , 549,550 5 Vv 1 Collector Cutoff Current IcBo 15 | nA | Vop=30V Ip=0 5 | pA | Vop=300 Ige0 | Ta=150C | Collector-Enitter Saturation Voltage| Vcn(sat) 0.07 0.25| V | Ig=lOmA Ipe0.5mA 0.22 0.6 | vy | Ic=100mA Ip=5mA(Pulsed) Collector-Emitter Knee Voltage VOEK 0.3 O. Vv Ic=l0mA, IB=value at . Lo a which Ic=llmA Von=lV Base-Enitter Saturation Voltage VBE(sat) 0.7 Vv Ig=10mA Ip=0.5mA | a 0.9 v Ig=100mA Ip=5mA( Pulsed) 4 Base-Enitter Voltage VBE 0.58 0.63 0.7 | V Ig=emA VoE=5V < 0.68 0.77 | V Ic=l0mA VcE=5V Current Gain~Bandwidth Product fm | 250 MAz | Ig=l0mA VoR=5V a Collector-Base Capacitante Cob 207 4.5 pF | Vep=lOV Ipm=0 f=iNEz Noise Figure NF Ig=0.2mA Vcog=5V BC546, 547,548 2 10 |dB | Rg=2Kn f=lkHz BC549,550 - 1.4 4 |aB | sf=200Hz Noise Figure Ce NF Ic=0.2mA Vop=5V 'e. BC549 only 1.4 4 1dB | Rq=2Ka f=30Hz-15kHz BC550 only 1.2 3 idB Flicker Noise Voltage Referred toBase| En a Ig=0.2mA VoR=5V BC549,550 only ~ - +s Owl35 [pV | Ro=2KQ f=10H2-50Hz | FLICKER NOISE MEASUREMENT _ ager , =e oe "i .| i TAF Valve Voltmeter i Transistor under test Amplifier. Band-Pass Filter AF Va FH j ae 1OHe 50 Hz 1OH2 | [50 Hz ry 4 1o* == a 2 Yu i ee ; : Ry, % MH | t : 103 gy 2, : , =H vied Feedback (Vij =const.} _ 5 ot 1 10-100" tk 10 Rb , 1 } i i r t pF i . a : i vj | J (4 fm a ee a_i <4 id 4 z ae se ann ee conn wiseD.C. CURRENT GAIN (HFE) AT VcE=5V TA=250C . \ BC546, BC547 BC546, BC5A7 ee BC548 BC548 BC548 ; > In BAI BESO ek Hre GROUP A= s| SCRE GROUP BD ERE GROUP c_ MIN -TYP MAX | ~ MIN. TYP MAX MIN TYP MAX 0.01lmA 90 . 170 . 290 "Oma . 110 170 . 220 200 300 450 420 520 800 100mA 100 . 160 270 h - PARAMETERS AT Ic=2mA VcH=5V f=lkHz Ta=25C # i Ere h - PARAMETER SYMBOL FE GROUP A FE GROUP B FE GROUP Cl mre MIN TYP MAX| MIN TYP MAX | MIN TYP MAX/~ Input Impedance hie 1.6 2.7 4.5} 3.2 4.5 8.5 6 8.7 15) Kn Voltage Feedback Ratio hre 1.5 2 3 xio~4 Small Signal Current Gain | he 125 190 260] 240 330 500/450 580 900 Output Admittance hoe 18 30 30 60 60 110) wu PY : TYPICAL CHARACTERISTICS AT Ta=25C (Pulse Test) D.C. CURRENT GAIN VBE AND VCE(sat} { vs COLLECTOR CURRENT vs COLLECTOR CURRENT | [i Hee + Vv} a Vopz5v eo 600 a 1.2 e OUP i GR 1.0 , 4 VBE i 400 0.8 @ VoE=5V o ! cROUP_B ; 0.6 4 | = ROUP A 0.4 4 20 g VCE (sat) 0.2 @ Ic=20 Ig _ 4g 0 : 0.0% 0.1 1 10 100 0.1 1 10 1000 A - Ic (ma) Ic (mA) . ns a d od i f f !|BC546 family an 2 6 1.0 0.5 200 100 'cBO (nA) 10 0.1 En (pV) 0.15 0.10 10 TYPICAL CHARACTERISTICS (Ta=25C UNLESS OTHERWISE SPECIFIED) COMMON EMITTER OUTPUT CHARACTERISTICS 1 2 3 VCE (Vv) 5yuA 4uA uA IB=1 pA COLLECTOR CUTOFF CURRENT vs AMBIENT TEMPERATURE 40 80 120 Ta (c) 160 EQUIVALENT NOISE VOLTAGE AT BASE vsCOLLECTOR CURRENT io WA) Vce=5V f=1050Hz Rg= CURRENT GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT , . (MHz) : 300 VcE=5V . B an i . 200 at / ; yn 100; 7 0 0.1 1 10 160 Ic {mA} hPARAMETERS (NORMALIZED) VS COLLECTOR CURRENT - 10 he (N)} 0.2 0.1 1 10 Ic imA} BROAD BAND NOISE FIGURE vs COLLECTOR CURRENT NF N Vce=5V NG : f=30-15K Hz'} (dB) N NY Rg=5002 J , 3 NN A a 2 PSL RgttKay NO Re=2Ksr SLL : te Rg=5Ke , 17 p BC549 ) a ll TT Rg=10Ka BC550) 0 . - - 10 100 1000 Ic WA) + 78..4500B/45: : 7 oJ