MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54516P 5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54516P is five-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION NC INPUT FEATURES Medium breakdown voltage (BVCEO 25V) High-current driving (Ic(max) = 500mA) Driving available with PMOS IC output Wide operating temperature range (Ta = -20 to +75C) 1 14 NC IN1 2 13 O1 IN2 3 12 O2 IN3 4 11 O3 OUTPUT IN4 5 10 O4 IN5 6 9 O5 GND 7 8 Package type 14P4(P) NC NC : No connection CIRCUIT DIAGRAM APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces OUTPUT INPUT 20K 20K 2K GND FUNCTION The M54516P has five circuits consisting of NPN Darlington transistors. These ICs have resistance of 20k between input transistor bases and input pins. The output transistor emitters are all connected to the GND pin (pin 7). Collector current is 500mA maximum. Collector-emitter supply voltage is 25V maximum. ABSOLUTE MAXIMUM RATINGS Symbol Conditions Ratings Unit Current per circuit output, L -0.5 ~ +25 500 V mA Ta = 25C, when mounted on board -0.5 ~ +25 1.47 V W -20 ~ +75 -55 ~ +125 C Collector-emitter voltage Output, H IC VI Collector current Input voltage Pd Topr Power dissipation Operating temperature Storage temperature Unit : (Unless otherwise noted, Ta = -20 ~ +75 C) Parameter VCEO Tstg The five circuits share the GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. C Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54516P 5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY RECOMMENDED OPERATING CONDITIONS Symbol (Unless otherwise noted, Ta = -20 ~ +75C) Limits Parameter VO Output voltage IC Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) VIH "H" input voltage VIL "L" input voltage min 0 typ -- max 25 Duty Cycle no more than 10% 0 -- 400 Duty Cycle no more than 55% 0 -- 200 IC 400mA IC 200mA 8 -- 5 -- -- Unit V mA 0 ELECTRICAL CHARACTERISTICS 20 V 0.5 V (Unless otherwise noted, Ta = -20 ~ +75C) Symbol Parameter V (BR) CEO Collector-emitter breakdown voltage VCE (sat) Collector-emitter saturation voltage II h FE Limits Test conditions Unit min typ* max ICEO = 100A VI = 8V, I C = 400mA 25 -- -- 1.15 -- 2.2 -- 0.9 1.4 Input current VI = 5V, I C = 200mA VI = 17V 0.3 0.8 1.8 mA DC amplification factor VCE = 4V, IC = 400mA, Ta = 25C 1000 4000 -- -- V V * : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) min -- typ 40 max -- -- 500 -- Unit ns ns TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT Limits Test conditions VO Measured device 50% 50% INPUT RL OUTPUT PG OUTPUT 50 CL 50% ton 50% toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VP = 8VP-P (2) Input-output conditions : RL = 25, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54516P 5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 500 Collector current Ic (mA) Power dissipation Pd (W) 2.0 1.5 1.0 0.5 0 25 0 50 75 400 300 Ta = 75C Ta = 25C Ta = -20C 100 0 100 VI = 5V 200 0 Duty-Cycle-Collector Characteristics *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 100 0 0 20 40 60 80 300 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C 100 0 20 40 80 100 Grounded Emitter Transfer Characteristics 500 104 VCE = 4V Collector current Ic (mA) DC amplification factor hFE 60 Duty cycle (%) DC Amplification Factor Collector Current Characteristics Ta = 75C Ta = 25C Ta = -20C 3 103 7 5 3 102 1 10 200 0 100 400 Duty cycle (%) 7 5 2.0 500 Collector current Ic (mA) Collector current Ic (mA) 400 200 1.5 Duty-Cycle-Collector Characteristics 300 1.0 Output saturation voltage VCE (sat) (V) Ambient temperature Ta (C) 500 0.5 3 5 7 102 3 Collector current Ic (mA) 5 7 103 VCE = 4V 400 Ta = 75C Ta = 25C Ta = -20C 300 200 100 0 0 1 2 3 4 5 Input voltage VI (V) Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54516P 5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY Input Characteristics Input current II (mA) 2.0 Ta = 75C Ta = 25C Ta = -20C 1.5 1.0 0.5 0 0 5 10 15 20 Input voltage VI (V) Jan. 2000