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© 2000 IXYS All rights reserved
IGBT
Combi Pack
Preliminary Data Sheet
95592A (3/97)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVCES IC= 3 mA, VGE = 0 V 1000 V
VGE(th) IC= 250 mA, VGE = VGE 2.5 5.5 V
ICES VCE = 0.8, VCES TJ = 25°C 300 mA
VGE= 0 V TJ = 125°C3mA
IGES VCE= 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= ICE90, VGE = 15 12N100 3. 5 V
12N100A 4.0 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1000 V
VCGR TJ= 25°C to 150°C; RGE = 1 MW1000 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C24A
IC90 TC= 90°C12A
ICM TC= 25°C, 1 ms 4 8 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 150 W ICM = 24 A
(RBSOA) Clamped inductive load, L = 300 mH @ 0.8 VCES
PCTC= 25°C 100 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque with screw M3 0.45/4 Nm/lb.in.
Mounting torque with screw M3.5 0.55/5 Nm/lb.in.
Weight 4g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
VCES IC25 VCE(sat)
IXGA/IXGP12N100U1 1000 V 24 A 3.5 V
IXGA/IXGP12N100AU1 1000 V 24 A 4.0 V
Features
• International standard packages
JEDEC TO-220AB and TO-263AA
• IGBT with antiparallel FRED in one
package
• Second generation HDMOSTM process
• Low VCE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
• Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low IRM
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Easy to mount with one screw
• Space savings (two devices in one
package)
• Reduces assembly time and cost
• High power density
TO-263 AA (IXGA)
GCE
TO-220AB(IXGP)
GEC (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
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© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs IC= IC90; VCE = 10 V, 6 1 0 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Qg65 90 nC
Qge IC= IC90, VGE = 15 V, VCE = 0.5 VCES 820nC
Qgc 24 45 nC
td(on) 100 ns
tri 200 ns
td(off) 850 1000 ns
tfi 12N100A 500 700 ns
12N100 800 1000 ns
Eoff 12N100A 4 6 mJ
td(on) 100 ns
tri 200 ns
Eon 1.1 mJ
td(off) 900 ns
tfi 12N100A 950 ns
12N100 1250 ns
Eoff 12N100A 8 mJ
12N100 10 mJ
RthJC 1.25 K/W
RthCK 0.25 K/W
Inductive load, TJ = 25°C
IC= IC90, VGE = 15 V, L = 300 mH
VCE = 800 V, RG = Roff = 120 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
Inductive load, TJ = 125°C
IC= IC90, VGE = 15 V, L = 300 mH
VCE = 800 V, RG = Roff = 120 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
VFIF=8A, VGE = 0 V, 2.75 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IRM IF= IC90, VGE = 0 V, -diF/dt = 100 A/ms 6.5 A
trr VR= 100 V, TJ = 125°C 140 ns
IF= 1 A, -di/dt = 50 A/ms, VR = 30 V TJ = 25°C5060ns
RthJC 2.5 K/W
TO-263 AA (IXGA) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
TO-220 AB (IXGP) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.35 0.56 0.014 0.022
R 2.29 2.79 0.090 0.110
IXGA12N100U1 IXGP12N100U1
IXGA12N100AU1 IXGP12N100AU1
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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© 2000 IXYS All rights reserved
VGE - Volts
24681012
I
C
- Amperes
0
10
20
30
40
50
VCE - Volts
0246810
I
C
- Amperes
0
10
20
30
40
50
VCE-Volts
0 5 10 15 20 25 30 35 40
Capacitance - pF
10
100
1000
TJ - Degrees C
25 50 75 100 125 150
V
CE (sat)
- Normalized
0.6
0.8
1.0
1.2
1.4
1.6
VCE - Volts
0 4 8 12 16 20
I
C
- Amp e re s
0
20
40
60
80
100
13V
11V
9V
7V
VCE = 10V
TJ = 25°CVGE = 15V
TJ = 25°C
IC = 6A
IC = 12A
IC = 24A
f = 1Mhz
7V
VGE = 15V
TJ = 25°C
VCE - Volts
0246810
I
C
- Amperes
0
10
20
30
40
50
TJ = 125°C
Ciss
Coss
VGE = 15V
13V
11V
VGE = 15V
13V
11V
9V
7V
9V
Crss
TJ = 125°C
IXGA12N100U1 IXGP12N100U1
IXGA12N100AU1 IXGP12N100AU1
Figure 4. Temperature Dependence of VCE(sat)
Figure 2. Extended Output CharacteristicsFigure 1. Saturation Voltage Characteristics
Figure 6. Capacitance CurvesFigure 5. Admittance Curves
Figure 3. Saturation Voltage Characteristics
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© 2000 IXYS All rights reserved
IXGA12N100U1 IXGP12N100U1
IXGA12N100AU1 IXGP12N100AU1
Figure 7. Dependence of tfi and EOFF on IC.
Figure 11. Transient Thermal Resistance
Figure 8. Dependence of tfi and EOFF on RG.
Figure 9. Gate Charge Figure 10. Turn-off Safe Operating Area
Pulse Width - Seconds
0.00001 0.0001 0.001 0.01 0.1 1
Z
thJC
(K/W)
0.001
0.01
0.1
1
VCE - Volts
0 200 400 600 800 1000
I
C
- Amperes
0.1
1
10
100
Qg - nanocoulombs
0 1530456075
V
GE
- Volts
0
3
6
9
12
15
RG - Ohms
0 306090120150
E
(OFF)
- millijoules
0
1
2
3
4
5
t fi
- nanoseconds
0
200
400
600
800
1000
IC - Amperes
0 5 10 15 20
E
(OFF)
- milliJoules
1
2
3
4
5
t fi - nanoseconds
800
900
1000
1100
1200
VCE = 150V
IC = 30A
t fi
E(OFF)
TJ = 125°C
RG = 4.7
dV/dt < 5V/ns
D=0.5
D=0.1
D=0.05
D=0.01
Single pulse D = Duty Cycle
RG = 120
TJ = 125°C
24
TJ = 125°C
E(OFF)
D=0.2
D=0.02
IC = 12A
tfi
