ST330SPbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 330 A FEATURES * Center amplifying gate * International standard case TO-209AE (TO-118) RoHS * Hermetic metal case with ceramic insulator COMPLIANT * Compression bonded encapsulation for heavy duty operations such as severe thermal cycling * Lead (Pb)-free * Designed and qualified for industrial level TO-209AE (TO-118) TYPICAL APPLICATIONS * DC motor controls PRODUCT SUMMARY * Controlled DC power supplies IT(AV) 330 A * AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC IT(RMS) VALUES UNITS 330 A 75 C 520 ITSM I2 t 50 Hz 9000 60 Hz 9420 50 Hz 405 60 Hz 370 VDRM/VRRM tq Typical TJ A kA2s 400 to 2000 V 100 s - 40 to 125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER ST330S VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK IDRM/IRRM MAXIMUM VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM AND OFF-STATE VOLTAGE V mA V 04 400 500 08 800 900 12 1200 1300 16 1600 1700 20 2000 2100 Document Number: 94409 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com 50 www.vishay.com 1 ST330SPbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 330 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at case temperature IT(AV) Maximum RMS on-state current IT(RMS) Maximum peak, one-cycle non-repetitive surge current ITSM VALUES UNITS 180 conduction, half sine wave TEST CONDITIONS 330 A 75 C DC at 75 C case temperature 520 t = 10 ms 9000 t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t No voltage reapplied 100 % VRRM reapplied No voltage reapplied 9420 Sinusoidal half wave, initial TJ = TJ maximum 7920 405 370 287 100 % VRRM reapplied 4050 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.834 VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.898 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.687 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.636 Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.52 VTM Maximum holding current IH Typical latching current IL kA2s 262 t = 0.1 to 10 ms, no voltage reapplied High level value of threshold voltage Maximum on-state voltage A 7570 600 TJ = 25 C, anode supply 12 V resistive load 1000 kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM VALUES UNITS 1000 A/s Typical delay time td Gate current A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C 1.0 Typical turn-off time tq ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s 100 SYMBOL TEST CONDITIONS VALUES UNITS s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/s Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94409 Revision: 11-Aug-08 ST330SPbF Series Phase Control Thyristors (Stud Version), 330 A Vishay High Power Products TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM VALUES TEST CONDITIONS TYP. TJ = TJ maximum, tp 5 ms 10.0 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp 5 ms 3.0 TJ = 25 C IGT TJ = - 40 C DC gate voltage required to trigger VGT TJ = 25 C TJ = 125 C DC gate current not to trigger IGD DC gate voltage not to trigger VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied TJ = TJ maximum A V 5.0 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 125 C UNITS W 20 TJ = TJ maximum, tp 5 ms TJ = - 40 C DC gate current required to trigger MAX. 200 - 100 200 50 - 2.5 - 1.8 3 1.1 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range TEST CONDITIONS TJ - 40 to 125 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, case to heatsink RthC-hs Mounting torque, 10 % DC operation 0.10 Mounting surface, smooth, flat and greased 0.03 Non-lubricated threads 48.5 (425) N*m (lbf * in) 535 g Approximate weight Case style C See dimension - link at the end of datasheet K/W TO-209AE (TO-118) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180 0.011 0.008 120 0.013 0.014 90 0.017 0.018 60 0.025 0.026 30 0.041 0.042 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94409 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 ST330SPbF Series Vishay High Power Products Phase Control Thyristors ST330S Series RthJC (DC) = 0.10 K/ W 120 110 Conduc tion Angle 100 30 90 60 90 120 80 180 70 0 50 100 150 200 250 300 130 Maximum Allowable Case Temperature (C) 130 350 ST330S Series RthJC (DC) = 0.10 K/ W 120 110 100 Conduc tion Period 90 30 80 60 90 120 70 180 DC 60 0 100 200 300 400 500 600 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 480 elt -D a 0.2 K/ W RMSLimit 280 K/ W W K/ 320 K/ W 03 0. 360 0. 08 0. 12 = 400 A 180 120 90 60 30 440 hS R t R Maximum Average On-state Power Loss(W) Maximum Allowable Case Temperature (C) (Stud Version), 330 A 240 200 Conduction Angle 160 120 ST330SSeries TJ = 125C 80 40 0.3 K/ W 0.4 K/ W 0.6 K /W 1.2 K/ W 0 0 50 100 150 200 250 300 350 25 50 75 100 125 Maximum Allowable Ambient Temperature (C) Average On-state Current (A) 650 600 550 DC 180 120 90 60 30 03 0. W K/ 0. 08 = K/ W 0.1 2K /W ta el -D R 400 350 SA th 500 450 R Maximum Average On-state Power Loss (W) Fig. 3 - On-State Power Loss Characteristics 0.2 300 RMSLimit 250 200 Conduction Period 150 ST330SSeries TJ = 125C 100 50 K/ W 0.3 K/ W 0.4 K/ W 0.6 K /W 1.2 K/ W 0 0 100 200 300 400 500 Average On-state Current (A) 600 25 50 75 100 125 Maximum Allowable Ambient Temp erature (C) Fig. 4 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94409 Revision: 11-Aug-08 ST330SPbF Series Peak Half Sine Wave On-state Current (A) 8000 Peak Half Sine Wave On-state Current (A) Phase Control Thyristors (Stud Version), 330 A At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @60 Hz 0.0083 s @50 Hz 0.0100 s 7500 7000 6500 6000 5500 5000 4500 ST330S Series 4000 3500 1 10 100 Vishay High Power Products 9000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 8000 Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapp lied 7000 Rated VRRM Reapplied 6000 5000 4000 ST330SSeries 3000 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cyc le Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 10000 1000 Tj = 25 C Tj = 125 C ST330S Series 100 0 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (K/ W) Fig. 7 - On-State Voltage Drop Characteristics 1 Steady State Value RthJC = 0.10 K/ W (DC Operation) 0.1 0.01 ST330SSeries 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Document Number: 94409 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST330SPbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 330 A Rectangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 s b) Rec ommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 s (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms (a) (b) 1 Tj=-40 C Tj=25 C Tj=125 C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 Frequency Limited by PG(AV) Device: ST330SSeries 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code ST 33 0 S 16 P 0 PbF 1 2 3 4 5 6 7 8 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - S = Compression bonding stud 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - P = Stud base 3/4"-16UNF-2A threads 7 - 0 = Eyelet terminals (gate and auxiliary cathode leads) 8 - 1 = Fast-on terminals (gate and auxiliary cathode leads) Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 6 http://www.vishay.com/doc?95080 For technical questions, contact: ind-modules@vishay.com Document Number: 94409 Revision: 11-Aug-08 Outline Dimensions Vishay Semiconductors TO-209AE (TO-118) DIMENSIONS in millimeters (inches) Ceramic housing 22 (0.87) MAX. 4.3 (0.17) DIA. White gate 10.5 (0.41) NOM. Red silicon rubber 245 (9.65) 10 (0.39) Red cathode 245 (9.65) 255 (10.04) 38 (1.50) MAX. DIA. White shrink 27.5 (1.08) MAX. 47 (1.85) MAX. 21 (0.82) MAX. Red shrink SW 45 3/4"16 UNF-2A (1) 49 (1.92) MAX. Fast-on terminals AMP. 280000-1 REF-250 22 (0. 86 )M IN . 9.5 (0. 3 7) MI N. 4.5 (0.18) MAX. Flexible leads C.S. 50 mm2 (0.078 s.i.) Note (1) For metric device: M24 x 1.5 - length 21 (0.83) maximum Document Number: 95080 Revision: 02-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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