Rev.2.00 Aug 10, 2005 page 1 of 5
2SD667, 2SD667A
Silicon NPN Epitaxial REJ03G0769-0200
(Previous ADE-208-1137)
Rev.2.00
Aug.10.2005
Application
• Low frequency power amplifier
• Complementary pair with 2SB647/A
Outline
1. Emitter
2. Collecto
r
3. Base
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
3
21
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol 2SD667 2SD667A Unit
Collector to base voltage VCBO 120 120 V
Collector to emitter voltage VCEO 80 100 V
Emitter to base voltage VEBO 5 5 V
Collector current IC 1 1 A
Collector peak current iC(peak) 2 2 A
Collector power dissipation PC 0.9 0.9 W
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –50 to +150 °C
2SD667, 2SD667A
Rev.2.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
2SD667 2SD667A
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage V(BR)CBO 120 — — 120 — — V IC = 10 µA, IE = 0
Collector to emitter
breakdown voltage V(BR)CEO 80 — — 100 — — V IC = 1 mA, RBE = ∞
Emitter to base
breakdown voltage V(BR)EBO 5 — — 5 — — V IE = 10 µA, IC = 0
Collector cutoff current ICBO — — 10 — — 10 µA VCB = 100 V, IE = 0
DC current transfer ratio hFE1*1 60 — 320 60 — 200
VCE = 5 V,
IC = 150 mA*2
h
FE2 30 — — 30 — —
VCE = 5 V,
IC = 500 mA*2
Collector to emitter
saturation voltage VCE(sat) — — 1 — — 1 V
IC = 500 mA,
IB = 50 mA*2
Base to emitter voltage VBE — — 1.5 — — 1.5 V
VCE = 5 V,
IC = 150 mA*2
Gain bandwidth product fT — 140 — — 140 — MHz
VCE = 5 V,
IC = 150 mA*2
Collector output
capacitance Cob — 12 — — 12 — pF
VCB = 10 V, IE = 0,
f = 1 MHz
Notes: 1. The 2SD667 and 2SD667A are grouped by hFE1 as follo ws.
2. Pulse test
B C D
2SD667 60 to 120 100 to 200 160 to 320
2SD667A 60 to 120 100 to 200
2SD667, 2SD667A
Rev.2.00 Aug 10, 2005 page 3 of 5
Main Characteristics
Maximum Collector Dissipation Curve
Ambient Temperature Ta (°C)
Collector Power Dissipation PC (W)
0.8
1.2
0.4
050 100 150
Typical Output Characteristics
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
1.0
0.8
0.6
0.4
0.2
02 6 1048
I
B
= 0
0.5mA
1
2
5
10
15
20
25
30
35
P
C
= 0.9 W
Typical Transfer Characteristics
Base to Emitter Voltage VBE (V)
Collector Current IC (mA)
V
CE
= 5 V
500
200
100
50
20
10
5
2
1
0 0.2 0.6 1.00.4 0.8
Ta = 75°C
25
–25
DC Current Transfer Ratio
vs. Collector Current
Collector Current IC (mA)
DC Current Transfer Ratio hFE
300
V
CE
= 5 V
Ta = 75
°
C
25
–25
250
200
150
100
50
0
1 10 100 1,000330
300
Collector Current IC (mA)
Base to Emitter Saturation Voltage VBE(sat) (V)
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
1.2
I
C
= 10 I
B
Pulse
Ta = –25°C
Ta = –25
°
C
25
25
75
75
1.0
0.8
0.6
0.4
0.2
0
0.6
0.5
0.4
0.3
0.2
0.1
0
1 10 100 1,000330
300
V
BE(sat)
V
CE(sat)
Saturation Voltage
vs. Collector Current
Collector Current IC (mA)
Gain Bandwidth Product
vs. Collector Current
Gain Bandwidth Product fT (MHz)
240
200
160
120
80
40
0
10 30 100 300 1,000
V
CE
= 5 V
2SD667, 2SD667A
Rev.2.00 Aug 10, 2005 page 4 of 5
Collector Output Capacitance vs.
Collector to Base Voltage
Collector to Base Voltage VCB (V)
Collector Output Capacitance Cob (pF)
f = 1 MHz
I
E
= 0
200
100
50
20
10
5
2
1 5 20 100210
50
2SD667, 2SD667A
Rev.2.00 Aug 10, 2005 page 5 of 5
Package Dimensions
0.60 Max
0.55 Max
4.8 ± 0.4 3.8 ± 0.4
8.0 ± 0.5
0.7
2.3 Max
10.1 Min
0.5 Max
1.27
2.54
0.65 ± 0.1
0.75 Max
Package Name
PRSS0003DC-A TO-92 Mod / TO-92 ModV
MASS[Typ.]
0.35gSC-51
RENESAS CodeJEITA Package Code
Unit: mm
Ordering Information
Part Name Quantity Shipping Container
2SD667BTZ-E
2SD667CTZ-E
2SD667DTZ-E
2SD667ABTZ-E
2SD667ACTZ-E
2500 Hold Box, Radial Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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