
NPN EPITAXIAL SILICON POWER TRANSISTOR BD237-S
TO126
Plastic Package
Intended for use in Medium Power Linear Switching Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION SYMBOL UNIT
Collector Base Voltage VCBO V
Collector Emitter Voltage VCEO V
Emitter Base Voltage VEBO V
Collector Current ICA
Collector Peak Current ICM A
Total Dissipation @ Ta=25ºC PDW
Storage Temperature Tstg ºC
Operating Junction Temperature Tj ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector Base Voltage VCBO IC=10µA, IE=0 120 V
Collector Emitter Voltage VCEO IC=1mA, IB=0 95 V
Collector Emitter Saturation Voltage *VCE (sat) IC=2A, IB=200mA 0.15 0.4 V
Base Emitter Saturation Voltage *VBE (sat) IC=2A, IB=200mA 0.9 1.2 V
Collector Cut Off Current ICBO VCB=100V, IE=0 1.0 µA
Emitter Cut Off Current IEBO VEB=4V, IC=0 1.0 µA
DC Current Gain *hFE IC=1A, VCE=2V 90 260
IC=2A, VCE=2V 35
IC=3A, VCE=2V 18
Current Gain Bandwidth Product fTIC=250mA, VCE=10V 3MHz
*Pulsed Pulse Duration=300µµs, Duty Cycle=1.5%
BD237S Rev_1 111204E
- 65 to +150
150
VALUE
120
95
6.0
2.0
8.0
1.30
C
E
Continental Device India Limited Data Sheet Page 1 of 3
Continental Device India Limited
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