5962-8759101LA - Maxim Integrated Products, Inc.

SCOPE: CMOS, COMPLETE, HIGH-SPEED, 12 -BIT A/D CONVERTER

Device Type Generic Number

01 MX7572S(x)12/883B

02 MX7572S(x)05/883B

Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows:

Outline Letter Mil-Std-1835 Case Outline Package Code

Q GDIP1-T24 or CDIP2-T24 24 LEAD CERDIP J24

E CQCC1-N28 28 LCC L28

A bsolute Maximum Ratings :

VDD to DGND .................................................................................................. -0.3V to 7V

VSS to DGND .............................................................................................. +0.3V to -17V

AGND to DGND ................................................................................... -0.3V, (VDD+0.3V)

AIN to AGND ............................................................................................... -15V to +15V

Digital Input Voltage to DGND ............................................................. -0.3V, (VDD+0.3V)

Digital Output Voltage to DGND .......................................................... -0.3V, (VDD+0.3V)

Lead Temperature (soldering, 10 seconds) ................................................................... +300°C

Storage Temperature ...................................................................................... -65°C to +150°C

Continuous Power Dissipation .........................................................................…... TA=+70°C

24 pin CERDIP(derate 12.5mW/°C above +70°C) ................................................…. 1000mW

28 pin LCC(derate 10.2mW/°C above +70°C) ............................................................. 816mW

Junct ion Temperat ure TJ .....................................................................................…... +150°C

Thermal Resista nce, J unction to Case, ΘJC

24 pin CERDIP...............................................................................................…..... 40°C/W

28 pin LCC ....................................................................................................…….. 15°C/W

Thermal Resistance, Junction to Ambient, ΘJA:

24 pin CERDIP................................................................................................……. 80°C/W

28 pin LCC ....................................................................................................……... 98°C/W

Recommended Operating Co ndit ions

Ambient Operating Range (TA) .........................................................…….. -55°C to +125°C

Positive Supply Voltage (VDD) .................................................……. +4.75V dc to +5.25V dc

Negative Supply Voltage (VSS) .............................................…..... -14.25V dc to +15.75V dc

Clock Freque ncy (fCLK) device 01 .....................................................................…….. 1.0MHz

Clock Freque ncy (fCLK) device 02 .....................................................................…….. 2.5MHz

Analog Input Voltage Range (AIN)

(specifications apply to slow memory mode) ..................................................…….. 0 to 5.0V

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those indicated in the operational section s of the sp ecifica tions is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

---------------------------- Electrical Characteristics of MX7572/883B 19-0274 Rev. B

for SMD 5962-87591 Page 2 of 8

TABLE 1. ELECTRICAL TESTS:

TEST Symbol

CONDITIONS

-55 °C ≤TA≤ +125°C 1/

VDD=+5V, VSS=-15V

Unless otherwise specified

Group A

Subgroup Device

type Limits

Min Limits

Max Units

Resolution NOTE 2 RES All 12 Bits

Integral Nonlinearity INL 1,2,3 All ±1.0 LSB

Differential Nonlinearity DNL 1,2,3 All ±1.0 LSB

Offset Error VOS 1

2,3 All ±4

±6LSB

Full Scale Error AE Full Scale = 5V, including internal

voltage reference error, (Ideal last

code transition=FS-3/2LSB’s)

1All ±15 LSB

Full Scale Temperature

Coefficient ∆AE/∆TGuaranteed by internal reference

temperature coefficient tests;

includes internal voltage reference

drift.

2,3 All 45 ppm/°C

Analog Input Current IIN AIN=5V 1,2,3 All 3.5 mA

Internal Reference

Voltage Output VREF 1 All -5.3 -5.2 V

Internal Reference Output

Current Sink Capab ility Constant external load during

conversion 13,14,15 All 550 µA

Digital Input Low

Voltage VINL VDD=4.75V, VSS=-15V, __ ___

HBEN, CLK IN, CS, RD 1,2,3 All 0.8 V

Digital Input High

Voltage VINH VDD=4.75V, VSS=-15V, __ ___

HBEN, CLK IN, CS, RD 1,2,3 All 2.4 V

Digital Input Capacitance CIN VDD=4.75V, VSS=-15V, __ ___

HBEN, CLK IN, CS, RD 13 All 10 pF

Digital Input Current IIN VDD=5.25V, VSS=-15V, __ ___

HBEN, CLK IN, CS, RD

AIN =0 V to VDD

CLK IN, VDD=5.25V, VSS=-15V,

AIN =0 V to VDD

1,2,3 All

-10

-20

20 µA

Digital Output Low

Voltage VOL ISINK=1.6mA, BUSY, CLK OUT,

VDD=4.75V, VSS=-15V, D11-D0/8 1,2,3 All 0.4 V

Digital Output High

Voltage VOH ISOURCE=200µA, BUSY, CLK OUT,

VDD=4.75V, VSS=-15V, D11-D0/8 1,2,3 All 4.0 V

Floating State Leakage

Current ILKG D11-D0/8, VDD=5.25V, VSS=-15V 1,2,3 All -10 10 µA

Floating State Output

Capacitance NOTE 2 COUT 13,14,15 All 15 pF

Conversion Time Using

Synchr o no us Clo c k tCONV 13,14,15 01

02 12.5

5.0 µs

Conversion Time Using

Asynchronous Clock tCONV 9,10,11 01

02 12.0

4.8 13.0

5.2 µs

Positive Suppl y Current IDD VDD=5.25V, VSS=-15. 7 5V,

__ __ _____ ____

CS=RD=BUSY=HIGH, AIN=5V

1,2,3 All 7.0 mA

---------------------------- Electrical Characteristics of MX7572/883B 19-0274 Rev. B

for SMD 5962-87591 Page 3 of 8

TEST Symbol

CONDITIONS

-55 °C ≤TA≤ +125°C 1/

VDD=+5V, VSS=-15V

Unless otherwise specified

Group A

Subgroup Device

type Limits

Min Limits

Max Units

Negat ive Supply Current ISS VDD=5.25V, VSS=-15.75V,

__ __ _____ ____

CS=RD=BUSY=HIGH, AIN=5V

1,2,3 All 12.0 mA

__ ___

CS to RD Setup Time t1NOTE 3 9,14,15 All 0ns

__ _____

RD to BUSY Propagation

Delay

t2NOTE 3 9

14,15 All 190

270 ns

Data-Access Time __

after RD

t3CL=60pF, NOTE 3, 4, 5

CL=100pF, NOTE 3, 5

14,15

All

110

150

125

170

RD Pulse Width t4NOTE 3 9,14,15 All t3ns

__ ___

CS to RD Hold Time t5NOTE 3 9,14,15 All 0ns

Data-Setup Time _____

after BUSY t6CL=60pF, NOTE 3, 5 9

14,15 All 70

100 ns

Bus-Re linq uish Time t7NOTE 3, 6 9

14,15 All 35

20 90

90 ns

HBEN to RD Setup T ime t8NOTE 3 9,14,15 All 0ns

HBEN to RD Hold T ime t9NOTE 3 9,14,15 All 0ns

Delay Between

Successive Read

Operations

t10 NOTE 3 9,14,15 All 500 ns

NOTE 1: VDD=+5V, VSS=-15V, AIN=0V to +5V, slow-memory mode, fCLK=1.0MHz for -01 and

fCLK=2.5MHz for -02, unless otherwise specified.

NOTE 2: Characteristics supplied for u se as a typical design limit but not production tested.

NOTE 3: All input control signals are specified with tr=tf=5ns (10% to 90% of +5V) and timed from a

1.6V voltage level. Times t6 and t10 are measured only for the initial test and a fter process or

design changes which may affect switching parameters.

NOTE 4: If not tested, shall be guaranteed to the limits sp ecified in Table 1, herein.

NOTE 5: Times t3 and t6 are measured with the load circuits of Figure 2 in the commercial datasheet

and defined as the time required for an output to cross 0.8V or 2.4V.

NOTE 6: Time t7 is defined as the time required for the data lines to change 0.5V when loaded with the

circuits of Figure 3 in the commercial datasheet.

---------------------------- Electrical Characteristics of MX7572/883B 19-0274 Rev. B

for 5962-87591 Page 4 of 8

ORDERING INFORMATION:

Package Pkg. Code MAXIM PART # SMD Number

01 24 pin CERDIP J24 MX7572SQ12/883B 5962-8759101LA

01 28 pin LCC L28 MX7572SE12/883B 5962-87591013C

02 24 pin CERDIP J24 MX7572SQ05/883B 5962-8759104LA

02 28 pin LCC L28 MX7572SE05/883B 5962-87591043C

TERMINAL CONNECTIONS:

J24 L28

1AIN NC

2VREF AIN

3AGND VREF

4D11 AGND

5D10 D11

6D9 D10

7D8 D9

8D7 NC

9D6 D8

10 D5 D7

11 D4 D6

12 DGND D5

13 D3/11 D4

14 D2/10 DGND

15 D1/9 NC

16 D0/8 D3/11

17 CLK IN D2/10

18 CLK OUT D1/9

19 HBEN D0/8

20 ___

RD CLK IN

21 ___

CS CLK OUT

22 _____

BUSY NC

23 VSS HBEN

24 VDD ___

25 ___

26 _____

BUSY

27 VSS

28 VDD

---------------------------- Electrical Characteristics of MX7572/883B 19-0274 Rev. B

for SMD 5962-87591 Page 5 of 8

SLOW MEMORY MODE

PARALLEL READ DATA-BUS STATUS TWO-BYTE READ DATA-BUS STA TUS

DATA OUTPUTS READ DATA OUTPUTS FIRST READ SECOND READ

D11 DB11 D7 DB7 LOW

D10 DB10 D6 DB6 LOW

D9 DB9 D5 DB5 LOW

D8 DB8 D4 DB4 LOW

D7 DB7 D3/D11 DB3 DB11

D6 DB6 D2/D10 DB2 DB10

D5 DB5 D1/D9 DB1 DB9

D4 DB4 D0/D8 DB0 DB8

D3/D11 DB3

D2/D10 DB2

D1/D9 DB1

D0/D8 DB0

ROM MODE

PARALLEL RE AD DATA BUS STATUS TWO-BYTE READ DATA BUS STATUS

DATA

OUTPUTS FIRST READ

(OLD DATA) SECOND

READ DATA

OUTPUTS FIRST READ

(OLD DATA) SECOND

READ THIRD

READ

D11 DB11 DB11 D7 DB7 LOW DB7

D10 DB10 DB10 D6 DB6 LOW DB6

D9 DB9 DB9 D5 DB5 LOW DB5

D8 DB8 DB8 D4 DB4 LOW DB4

D7 DB7 DB7 D3/D11 DB3 DB11 DB3

D6 DB6 DB6 D2/D10 DB2 DB10 DB2

D5 DB5 DB5 D1/D9 DB1 DB9 DB1

D4 DB4 DB4 D0/D8 DB0 DB8 DB0

D3/D11 DB3 DB3

D2/D10 DB2 DB2

D1/D9 DB1 DB1

D0/D8 DB0 DB0

---------------------------- Electrical Characteristics of MX7572/883B 19-0274 Rev. B

for SMD 5962-87591 Page 6 of 8

QUALITY ASSURAN CE

Sampling and inspection procedures shall be in accordance with MIL-Prf-38535, Appendix A as specified in Mil-

Std-883.

Screening shall be in accordance with Method 5004 of Mil-Std-883. Burn-in test Method 1015:

1. Test Condition, A, B, C, or D.

2. TA = +125°C minimum.

3. Interim and final electrical test requirements shall be specified in Table 2.

Quality conformance inspection shall be in accordance with Method 5005 of Mil-Std-883, including Groups A, B,

C, and D inspection.

Group A inspection:

1. Tests as specified in Table 2.

2. Selected subgroups in Table 1, Method 5005 of Mil-Std-883 shall be omitted.

Group C and D inspections:

a. End-point electrical parameters shall be specified in Table 1.

b. Steady-state life test, Method 1005 of Mil-Std-883:

1. Test condition A, B, C, D.

2. TA = +125°C, minimum.

3. Test duration, 1000 hours, except as permitted by Method 1005 of Mil-Std-883.

TABLE 2. ELECTRICAL TEST REQUIREM ENTS

Mil-Std-883 Test Requirements Subgroups

per Method 5005, Table 1

Interim Electric Parameters

Method 5004 1

Final Electrical Parameters

Method 5005 1*, 2, 3, 9, 10, 11

Group A Test Requirements

Method 5005 1, 2, 3, 4**, 5, 6 , 9, 10, 11, 13**, 14, 15

Group C and D End-Point Electrical Parameters

Method 5005 1

* PDA applies to Subgroup 1 only.

** Special subgroups 13, 14, 15 shall be measured only for initial test and after pr ocess or design

changes and shall be guaranteed to the limits specified in Table 1. Subgroup 13 is +25°C,

Subgroup 14 is +125°C and Subgroup 15 is -55°C.

---------------------------- Electrical Characteristics of MX7572/883B 19-0274 Rev. B

for SMD 5962-87591 Page 7 of 8