TISP4300H3BJR-S - Bourns - Datasheet.Live

NOVEMBER 1997 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

Parameter ITSP

ITSM

di/dt

A/µs

Waveshape 2/10 1.2/50, 8/20 10/160 5/320 10/560 10/1000 1 cycle 60 Hz 2/10 Wavefront

Value 500 300 250 200 160 100 60 400

TISP4xxxH3BJ Overvoltage Protector Series

TISP4070H3BJ THRU TISP4115H3BJ,

TISP4125H3BJ THRU TISP4220H3BJ,

TISP4240H3BJ THRU TISP4400H3BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

Summary Current Ratings

Summary Electrical Characteristics

This TISP® device series protects central office, access and customer premise equipment against overvoltages on the telecom line. The

TISP4xxxH3BJ is available in a wide range of voltages and has a high current capability, allowing minimal series resistance to be used. These

protectors have been specified mindful of the following standards and recommendations: GR-1089-CORE, FCC Part 68, UL1950, EN 60950,

IEC 60950, ITU-T K.20, K.21 and K.45. The TISP4350H3BJ meets the FCC Part 68 “B” ringer voltage requirement and survives the Type A and

B impulse tests. These devices are housed in a surface mount SMB (DO-214AA) package.

TISP4xxxH3BJ Overview

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex

*RoHS COMPLIANT

Part # VDRM

V(BO)

VT @ IT

IDRM

µA

I(BO)

Co @ -2 V

Functionally

Replaces

TISP4070H3 58 70 3 5 600 5 150 120 P0640SC†

TISP4080H3 65 80 3 5 600 5 150 120 P0720SC†

TISP4095H3 75 95 3 5 600 5 150 120 P0900SC†

TISP4115H3 90 115 3 5 600 5 150 120 P1100SC†

TISP4125H3 100 125 3 5 600 5 150 65

TISP4145H3 120 145 3 5 600 5 150 65 P1300SC†

TISP4165H3 135 165 3 5 600 5 150 65

TISP4180H3 145 180 3 5 600 5 150 65 P1500SC

TISP4200H3 155 200 3 5 600 5 150 65

TISP4220H3 160 220 3 5 600 5 150 65 P1800SC

TISP4240H3 180 240 3 5 600 5 150 55

TISP4250H3 190 250 3 5 600 5 150 55 P2300SC†

TISP4265H3 200 265 3 5 600 5 150 55

TISP4290H3 220 290 3 5 600 5 150 55 P2600SC†

TISP4300H3 230 300 3 5 600 5 150 55

TISP4350H3 275 350 3 5 600 5 150 55 P3100SC

TISP4395H3 320 395 3 5 600 5 150 55 P3500SC

TISP4400H3 300 400 3 5 600 5 150 55

† Bourns part has an improved protection voltage

NOVEMBER 1997 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

SD4XAA

Terminals T and R correspond to the

alternative line designators of A and B

Device Symbol

Device VDRM

V(BO)

‘4070 58 70

‘4080 65 80

‘4095 75 95

‘4115 90 115

‘4125 100 125

‘4145 120 145

‘4165 135 165

‘4180 145 180

‘4200 155 200

‘4220 160 220

‘4240 180 240

‘4250 190 250

‘4265 200 265

‘4290 220 290

‘4300 230 300

‘4350 275 350

‘4395 320 395

‘4400 300 400

Low Differential Capacitance ...................................67 pF max.

T(A)R(B)

MDXXBG

How To Order

SMBJ Package (Top View)

Description

ITU-T K.20/21 Rating . . . . . . . . . . . . . 8 kV 10/700, 200 A 5/310

Ion-Implanted Breakdown Region

Precise and Stable Voltage

Low Voltage Overshoot under Surge

Rated for International Surge Wave Shapes

TISP4xxxH3BJ Overvoltage Protector Series

Waveshape Standard ITSP

2/10 µs GR-1089-CORE 500

8/20 µs IEC 61000-4-5 300

10/160 µs FCC Part 68 250

10/700 µs ITU-T K.20/21 200

10/560 µs FCC Part 68 160

10/1000 µs GR-1089-CORE 100

These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning

flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used

for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of

devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).

The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until

the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the

current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as

the diverted current subsides.

This TISP4xxxH3BJ range consists of eighteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are

guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices

are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and

holding current values, consult the factory. For lower rated impulse currents in the SMB package, the 50 A 10/1000 TISP4xxxM3BJ series is

available.

............................................... UL Recognized Component

Device Package Carrier Order As

TISP4xxxH3BJ BJ (J-Bend DO-214AA/SMB) Embossed Tape Reeled

Bulk Pack

Insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etc.

TISP4xxxH3BJR-S

TISP4xxxH3BJ-S

NOVEMBER 1997 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP4xxxH3BJ Overvoltage Protector Series

Rating Symbol Value Unit

Repetitive peak off-state voltage, (see Note 1)

‘4070

‘4080

‘4095

‘4115

‘4125

‘4145

‘4165

‘4180

‘4200

‘4220

‘4240

‘4250

‘4265

‘4290

‘4300

‘4350

‘4395

‘4400

VDRM

± 58

± 65

± 75

± 90

±100

±120

±135

±145

±155

±160

±180

±190

±200

±220

±230

±275

±320

±300

Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)

ITSP A

2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 500

8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator) 300

10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 250

5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 220

0.2/310 µs (I3124, 0.5/700 µs voltage wave shape) 200

5/310 µs (ITU-T K.20/21, 10/700 µs voltage wave shape) 200

5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 200

10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 160

10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) 100

Non-repetitive peak on-state current (see Notes 2, 3 and 5)

ITSM

2.1

20 ms (50 Hz) full sine wave

16.7 ms (60 Hz) full sine wave

1000 s 50 Hz/60 Hz a.c.

Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A diT/dt 400 A/µs

Junction temperature TJ-40 to +150 °C

Storage temperature range Tstg -65 to +150 °C

NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.

2. Initially, the TISP4xxxH3BJ must be in thermal equilibrium with TJ=25°C.

3. The surge may be repeated after the TISP4xxxH3BJ returns to its initial conditions.

4. See Applications Information and Figure 11 for current ratings at other temperatures.

5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring

track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient

temperatures above 25 °C.

Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)

NOVEMBER 1997 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)

TISP4xxxH3BJ Overvoltage Protector Series

Parameter Test Conditions Min. Typ. Max. Unit

IDRM Repetitive peak off-

state current VD = VDRM TA = 25 °C

TA = 85 °C

±5

±10 µA

V(BO) Breakover voltage dv/dt = ±750 V/ms, RSOURCE = 300

‘4070

‘4080

‘4095

‘4115

‘4125

‘4145

‘4165

‘4180

‘4200

‘4220

‘4240

‘4250

‘4265

‘4290

‘4300

‘4350

‘4395

‘4400

±70

±80

±95

±115

±125

±145

±165

±180

±200

±220

±240

±250

±265

±290

±300

±350

±395

±400

V(BO) Impulse breakover

voltage

dv/dt ≤ ±1000 V/µs, Linear voltage ramp,

Maximum ramp value = ±500 V

di/dt = ±20 A/µs, Linear current ramp,

Maximum ramp value = ±10 A

‘4070

‘4080

‘4095

‘4115

‘4125

‘4145

‘4165

‘4180

‘4200

‘4220

‘4240

‘4250

‘4265

‘4290

‘4300

‘4350

‘4395

‘4400

±78

±88

±103

±124

±134

±154

±174

±189

±210

±230

±250

±261

±276

±301

±311

±362

±408

±413

I(BO) Breakover current dv/dt = ±750 V/ms, RSOURCE = 300 ±0.15 ±0.6 A

VTOn-state voltage IT=±5A, t

W= 100 µs±3V

IHHolding current IT=±5A, di/dt=-/+30mA/ms ±0.15 ±0.6 A

dv/dt Critical rate of rise of

off-state voltage Linear voltage ramp, Maximum ramp value < 0.85VDRM ±5kV/µs

IDOff-state current VD=±50 V TA = 85 °C±10 µA

Ω

NOVEMBER 1997 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) (continued)

TISP4xxxH3BJ Overvoltage Protector Series

Coff Off-state capacitance

f = 100 kHz, Vd=1V rms, V

D=0,

f = 100 kHz, Vd=1V rms, V

D=-1V

f = 100 kHz, Vd=1V rms, V

D=-2V

f = 100 kHz, Vd=1V rms, V

D=-50V

f = 100 kHz, Vd=1V rms, V

D= -100 V

(see Note 6)

‘4070 thru ‘4115

‘4125 thru ‘4220

‘4240 thru ‘4400

‘4070 thru ‘4115

‘4125 thru ‘4220

‘4240 thru ‘4400

‘4070 thru ‘4115

‘4125 thru ‘4220

‘4240 thru ‘4400

‘4070 thru ‘4115

‘4125 thru ‘4220

‘4240 thru ‘4400

‘4125 thru ‘4220

‘4240 thru ‘4400

145

130

120

170

150

140

NOTE 6: To avoid possible voltage clipping, the ‘4125 is tested with VD=-98V.

Parameter Test Conditions Min. Typ. Max. Unit

Thermal Characteristics

Parameter Test Conditions Min. Typ. Max. Unit

RθJA Junction to free air thermal resistance

EIA/JESD51-3 PCB, IT = ITSM(1000),

TA = 25 °C, (see Note 7) 113

°C/W

265 mm x 210 mm populated line card,

4-layer PCB, IT = ITSM(1000), TA = 25 °C50

NOTE 7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.

NOVEMBER 1997 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

Parameter Measurement Information

TISP4xxxH3BJ Overvoltage Protector Series

Figure 1. Voltage-current Characteristic for T and R Terminals

All Measurements are Referenced to the R Terminal

-v VDRM

IDRM

ITSM

ITSP

V(BO)

I(BO)

Quadrant I

Switching

Characteristic

V(BO)

I(BO)

ITSM

ITSP

-i

Quadrant III

Switching

Characteristic PMXXAAB

VDRM

IDRM

NOVEMBER 1997 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

Typical Characteristics

TISP4xxxH3BJ Overvoltage Protector Series

Figure 2. Figure 3.

Figure 4. Figure 5.

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

|ID| - Off-State Current - µA

0·001

0·01

0·1

100 TCHAG

VD = ±50 V

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalized Breakover Voltage

0.95

1.00

1.05

1.10 TC4HAF

VT - On-State Voltage - V

0.7 1.5 2 3 4 5 7110

IT - On-State Current - A

1.5

150

200

100

TA = 25 °C

tW = 100 µs

TC4HACB

'4240

THRU

'4400

'4070

THRU

'4115

'4125

THRU

'4220

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalized Holding Current

0.4

0.5

0.6

0.7

0.8

0.9

1.5

2.0

1.0

TC4HAD

OFF-STATE CURRENT

JUNCTION TEMPERATURE

ON-STATE CURRENT

ON-STATE VOLTAGE

NORMALIZED HOLDING CURRENT

JUNCTION TEMPERATURE

NORMALIZED BREAKOVER VOLTAGE

JUNCTION TEMPERATURE

NOVEMBER 1997 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

Typical Characteristics

TISP4xxxH3BJ Overvoltage Protector Series

Figure 6. Figure 7.

VD - Off-state Voltage - V

0.5 1 2 3 5 10 20 30 50 100150

Capacitance Normalized to VD = 0

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

TJ = 25 °C

Vd = 1 Vrms

TC4HABB

'4125 THRU '4220

'4240 THRU '4400

'4070 THRU '4115

VDRM - Repetitive Peak Off-State Voltage - V

50 60 70 80 90 150 200 250 300100

C - Differential Off-State Capacitance - pF

C = Coff(-2 V) - Coff(-50 V)

'4070

'4080

'4095

'4125

'4145

'4165

'4180

'4265

'4300

'4350

'4400

'4200

'4240

'4115

'4220

'4250

'4290

'4395

TCHAEB

NORMALIZED CAPACITANCE

OFF-STATE VOLTAGE

DIFFERENTIAL OFF-STATE CAPACITANCE

RATED REPETITIVE PEAK OFF-STATE VOLTAGE

NOVEMBER 1997 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

Rating and Thermal Information

TISP4xxxH3BJ Overvoltage Protector Series

Figure 8. Figure 9.

Figure 10. Figure 11.

t - Current Duration - s

0·1 1 10 100 1000

ITSM(t) - Non-Repetitive Peak On-State Current - A

1.5

TI4HAC

VGEN = 600 Vrms, 50/60 Hz

RGEN = 1.4*VGEN/ITSM(t)

EIA/JESD51-2 ENVIRONMENT

EIA/JESD51-3 PCB

TA = 25 °C

t - Power Duration - s

0·1 1 10 100 1000

ZθJA(t) - Transient Thermal Impedance - °C/W

1.5

150

100

TI4HAE

ITSM(t) APPLIED FOR TIME t

EIA/JESD51-2 ENVIRONMENT

EIA/JESD51-3 PCB

TA = 25 °C

TAMIN - Minimum Ambient Temperature - °C

-35 -25 -15 -5 5 15 25-40 -30 -20 -10 0 10 20

Derating Factor

0.93

0.94

0.95

0.96

0.97

0.98

0.99

1.00 TI4HADB

'4240 THRU '4440

'4070 THRU '4115

'4125 THRU '4220

TA - Ambient Temperature - °C

-40-30-20-100 1020304050607080

Impulse Current - A

100

120

150

200

250

300

400

500

600

700

IEC 1.2/50, 8/20

ITU-T 10/700

FCC 10/560

BELLCORE 2/10

BELLCORE 10/1000

FCC 10/160

TC4HAA

NON-REPETITIVE PEAK ON-STATE CURRENT

CURRENT DURATION

VDRM DERATING FACTOR

MINIMUM AMBIENT TEMPERATURE

IMPULSE RATING

AMBIENT TEMPERATURE

THERMAL IMPEDANCE

POWER DURATION

NOVEMBER 1997 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

Deployment

APPLICATIONS INFORMATION

Impulse Testing

TISP4xxxH3BJ Overvoltage Protector Series

These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage between two conductors (Figure 12)

or in multiples to limit the voltage at several points in a circuit (Figure 13).

In Figure 12, protector Th1 limits the maximum voltage between the two conductors to ±V(BO). This configuration is normally used to protect

circuits without a ground reference, such as modems. In Figure 13, protectors Th2 and Th3 limit the maximum voltage between each conduc-

tor and ground to the ±V(BO) of the individual protector. Protector Th1 limits the maximum voltage between the two conductors to its ±V(BO)

value. If the equipment being protected has all its vulnerable components connected between the conductors and ground, then protector Th1

is not required.

To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms.

The table below shows some common values.

If the impulse generator current exceeds the protector’s current rating, then a series resistance can be used to reduce the current to the

protector’s rated value to prevent possible failure. The required value of series resistance for a given waveform is given by the following

calculations. First, the minimum total circuit impedance is found by dividing the impulse generator’s peak voltage by the protector’s rated

current. The impulse generator’s fictive impedance (generators peak voltage divided by peak short circuit current) is then subtracted from the

minimum total circuit impedance to give the required value of series resistance. In some cases, the equipment will require verification over a

temperature range. By using the rated waveform values from Figure 11, the appropriate series resistor value can be calculated for ambient

temperatures in the range of -40 °C to 85 °C.

Figure 12. Two Point Protection Figure 13. Multi-point Protection

Th1

Th3

Th2

Th1

Standard

Peak Voltage

Setting

Voltage

Waveform

µs

Peak Current

Value

Current

Waveform

µs

TISP4xxxH3

25 °C Rating

AΩ

Series

Resistance

GR-1089-CORE 2500 2/10 500 2/10 500 0

1000 10/1000 100 10/1000 100

FCC Part 68

(March 1998)

1500 10/160 200 10/160 250 0

800 10/560 100 10/560 160 0

1500 9/720 † 37.5 5/320 † 200 0

1000 9/720 † 25 5/320 † 200 0

I3124 1500 0.5/700 37.5 0.2/310 200 0

ITU-T K.20/K.21 1500

4000 10/700 37.5

100 5/310 200 0

† FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K.21 10/700 impulse generator

NOVEMBER 1997 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

The protector can withstand currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times must be

terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefficient) resistors and fusible resistors are overcurrent

protection devices which can be used to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere.

In some cases, it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. The current versus

time characteristic of the overcurrent protector must be below the line shown in Figure 8. In some cases, there may be a further time limit

imposed by the test standard (e.g. UL 1459 wiring simulator failure).

AC Power Testing

Capacitance

APPLICATIONS INFORMATION

Normal System Voltage Levels

TISP4xxxH3BJ Overvoltage Protector Series

The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V, -2 V and -50 V. Where possible,

values are also given for -100 V. Values for other voltages may be calculated by multiplying the VD = 0 capacitance value by the factor given in

Figure 6. Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the effective capacitance is strongly

dependent on connection inductance. In many applications, such as Figure 15 and Figure 17, the typical conductor bias voltages will be about

-2 V and -50 V. Figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at -50 V.

The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without the

line connected, some degree of clipping is permissible. Under this condition, about 10 V of clipping is normally possible without activating the

ring trip circuit.

Figure 10 allows the calculation of the protector VDRM value at temperatures below 25 °C. The calculated value should not be less than the

maximum normal system voltages. The TISP4265H3BJ, with a VDRM of 200 V, can be used for the protection of ring generators producing

100 V r.m.s. of ring on a battery voltage of -58 V (Th2 and Th3 in Figure 17). The peak ring voltage will be 58 + 1.414*100 = 199.4 V. However,

this is the open circuit voltage and the connection of the line, and its equipment will reduce the peak voltage. In the extreme case of an

unconnected line, clipping the peak voltage to 190 V should not activate the ring trip. This level of clipping would occur at the temperature

when the VDRM has reduced to 190/200 = 0.95 of its 25 °C value. Figure 10 shows that this condition will occur at an ambient temperature of

-22 °C. In this example, the TISP4265H3BJ will allow normal equipment operation provided that the minimum expected ambient temperature

does not fall below -22 °C.

JESD51 Thermal Measurement Method

To standardize thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard

(JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3) cube which contains the test PCB (Printed Circuit Board)

horizontally mounted at the center. Part 3 of the standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for

packages smaller than 27 mm (1.06 ’’) on a side and the other for packages up to 48 mm (1.89 ’’). The SMBJ measurements used the smaller

76.2 mm x 114.3 mm (3.0 ’’ x 4.5 ’’) PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal resis-

tance) and represent a worse case condition. The PCBs used in the majority of applications will achieve lower values of thermal resistance and

so can dissipate higher power levels than indicated by the JESD51 values.

NOVEMBER 1997 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

Typical Circuits

TISP4xxxH3BJ Overvoltage Protector Series

Figure 14. Modem Inter-wire Protection Figure 15. Protection Module

Figure 16. ISDN Protection

Figure 17. Line Card Ring/Test Protection

FUSE

TISP4350

AI6XBMA

RING DETECTOR

HOOK SWITCH

D.C. SINK

SIGNAL

MODEM

RING

TIP

R1a

R1b

RING

WIRE

TIP

WIRE

Th3

Th2

Th1

PROTECTED

EQUIPMENT

E.G. LINE CARD

AI6XBK

R1a

R1b

Th3

Th2

Th1

AI6XBL

SIGNAL

D.C.

TEST

RELAY RING

RELAY SLIC

RELAY

TEST

EQUIP-

MENT RING

GENERATOR

S1a

S1b

R1a

R1b

RING

WIRE

TIP

WIRE

Th3

Th2

Th1

Th4

Th5

SLIC

PROTECTION

RING/TEST

PROTECTION

OVER-

CURRENT

PROTECTION

S2a

S2b

S3a

S3b

VBAT

220 nF

AI6XBJ

TISP6xxxx,

TISPPBLx,

1/2TISP6NTP2

NOVEMBER 1997 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

Recommended Printed Wiring Footprint

Device Symbolization Code

MECHANICAL DATA

Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.

Devices are shipped in one of the carriers below. Unless a specific method of shipment is specified by the customer, devices will be shipped in

the most practical carrier. For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk

pack or embossed tape.

Carrier Information

TISP4xxxH3BJ Overvoltage Protector Series

SMB Pad Size

MDXXBI

METRIC

(INCHES)

DIMENSIONS ARE:

2.54

(0.10)

2.40

(0.09)

2.16

(0.09)

Carrier Order As

Embossed Tape Reeled

Bulk Pack

TISP4xxxH3BJR-S

TISP4xxxH3BJ-S

Device Symbolization

Code

TISP4070H3BJ 4070H3

TISP4080H3BJ 4080H3

TISP4095H3BJ 4095H3

TISP4115H3BJ 4115H3

TISP4125H3BJ 4125H3

TISP4145H3BJ 4145H3

TISP4165H3BJ 4165H3

TISP4180H3BJ 4180H3

TISP4200H3BJ 4200H3

TISP4220H3BJ 4220H3

TISP4240H3BJ 4240H3

TISP4250H3BJ 4250H3

TISP4265H3BJ 4265H3

TISP4290H3BJ 4290H3

TISP4300H3BJ 4300H3

TISP4350H3BJ 4350H3

TISP4395H3BJ 4395H3

TISP4400H3BJ 4400H3

“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.

“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.

Mouser Electronics

Authorized Distributor

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Bourns:

TISP4180H3BJR TISP4080H3BJR TISP4290H3BJR TISP4350H3BJR-S TISP4290H3BJR-S TISP4250H3BJR-S

TISP4095H3BJR-S TISP4400H3BJR-S TISP4165H3BJR-S TISP4125H3BJR-S TISP4145H3BJR-S

TISP4180H3BJR-S TISP4115H3BJR-S TISP4395H3BJR-S TISP4070H3BJR TISP4250H3BJR TISP4220H3BJR

TISP4240H3BJR TISP4200H3BJR TISP4300H3BJR TISP4400H3BJR TISP4350H3BJR TISP4265H3BJR

TISP4125H3BJR TISP4145H3BJR TISP4165H3BJR TISP4115H3BJR TISP4095H3BJR TISP4395H3BJR

TISP4080H3BJR-S TISP4070H3BJR-S TISP4200H3BJR-S TISP4240H3BJR-S TISP4265H3BJR-S

TISP4220H3BJR-S TISP4300H3BJR-S