KAF-0402 IMAGE SENSOR
768 (H) X 512 (V) FULL FRAME CCD IMAGE SENSOR
JULY 20, 2012
DEVICE PERFORMANCE SPECIFICATION
REVISION 1.0 PS-0028
KAF-0402 Image Sensor
www.truesenseimaging.com Revision 1.0 PS-0028 Pg 2
TABLE OF CONTENTS
Summary Specification ......................................................................................................................................................................................... 4
Description .................................................................................................................................................................................................. 4
Applications ................................................................................................................................................................................................. 4
Ordering Information ............................................................................................................................................................................................ 5
Device Description ................................................................................................................................................................................................. 6
Architecture ................................................................................................................................................................................................. 6
Microlenses .................................................................................................................................................................................................. 7
Output Structure ..................................................................................................................................................................................... 7
Dark Reference Pixels ............................................................................................................................................................................ 8
Dummy Pixels ........................................................................................................................................................................................... 8
Image Acquisition ....................................................................................................................................................................................... 8
Charge Transport ....................................................................................................................................................................................... 8
Physical Description .................................................................................................................................................................................. 9
Pin Description and Device Orientation ............................................................................................................................................ 9
Imaging Performance .......................................................................................................................................................................................... 10
Specifications ........................................................................................................................................................................................... 10
Electro-Optical ...................................................................................................................................................................................... 10
Typical Performance Curves ............................................................................................................................................................................ 11
Defect Definitions ................................................................................................................................................................................................ 12
Specifications ........................................................................................................................................................................................... 12
Operation .................................................................................................................................................................................................................. 13
Absolute Maximum Ratings .................................................................................................................................................................. 13
DC Bias Operating Conditions ............................................................................................................................................................. 13
AC Operating Conditions ...................................................................................................................................................................... 14
Clock Levels ........................................................................................................................................................................................... 14
Timing ......................................................................................................................................................................................................................... 15
Requirements and Characteristics ...................................................................................................................................................... 15
Frame Timing............................................................................................................................................................................................ 16
Line Timing and Pixel Timing ................................................................................................................................................................ 16
Storage and Handling .......................................................................................................................................................................................... 17
Storage Conditions ................................................................................................................................................................................. 17
ESD .............................................................................................................................................................................................................. 17
Cover Glass Care and Cleanliness........................................................................................................................................................ 17
Environmental Exposure ....................................................................................................................................................................... 17
Soldering Recommendations ............................................................................................................................................................... 17
Mechanical Information ..................................................................................................................................................................................... 18
Completed Assembly ............................................................................................................................................................................. 18
Quality Assurance and Reliability .................................................................................................................................................................. 20
Quality and Reliability ............................................................................................................................................................................ 20
Replacement ............................................................................................................................................................................................ 20
Liability of the Supplier ......................................................................................................................................................................... 20
Liability of the Customer ....................................................................................................................................................................... 20
Test Data Retention ............................................................................................................................................................................... 20
Mechanical ................................................................................................................................................................................................ 20
Life Support Applications Policy .................................................................................................................................................................... 20
Revision Changes................................................................................................................................................................................................... 21
MTD/PS-0509 ........................................................................................................................................................................................... 21
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PS-0028 ...................................................................................................................................................................................................... 21
TABLE OF FIGURES
Figure 1: Block Diagram ................................................................................................................................................................................ 6
Figure 2: Microlens ......................................................................................................................................................................................... 7
Figure 3: Output Schematic ......................................................................................................................................................................... 7
Figure 4: Pinout Diagram .............................................................................................................................................................................. 9
Figure 5: Typical Spectral Response ......................................................................................................................................................... 11
Figure 6: Active Pixel Region ..................................................................................................................................................................... 12
Figure 7: Example Output Structure Load Diagram ............................................................................................................................. 13
Figure 8: Frame Timing Diagram ............................................................................................................................................................... 16
Figure 9: Line and Pixel Timing Diagrams ............................................................................................................................................... 16
Figure 10: Completed Assembly (1 of 2) ................................................................................................................................................. 18
Figure 11: Completed Assembly (2 of 2) ................................................................................................................................................. 19
KAF-0402 Image Sensor
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Summary Specification
KAF-0402 Image Sensor
DESCRIPTION
The KAF-0402 Image Sensor is a high performance area
CCD (charge-coupled device) image sensor with 768H x
512V photoactive pixels designed for a wide range of
image sensing applications.
The sensor incorporates true two-phase CCD technology,
simplifying the support circuits required to drive the
sensor as well as reducing dark current without
compromising charge capacity. The sensor also utilizes
the TRUESENSE Transparent Gate Electrode to improve
sensitivity compared to the use of a standard front side
illuminated polysilicon electrode.
Optional microlenses focus the majority of the light
through the transparent gate, increasing the optical
response further.
APPLICATIONS
Digitization
Medical
Scientific
Parameter
Typical Value
Architecture
Full Frame CCD; Enhanced
Response
Total Number of Pixels
784 (H) x 520 (V)
Number of Active Pixels
768 (H) x 512 (V) = approx. 0.4M
Pixel Size
9.0 µm (H) x 9.0 µm (V)
Imager Size
6.91(H) mm x 4.6 (V) mm
Die Size
8.4 mm (H) x 5.5 mm (V)
Aspect Ratio
3:2
Saturation Signal
100,000 electrons
Quantum Efficiency
(with microlens)
Peak: 77%
400 nm: 45%
Quantum Efficiency
(no microlens)
Peak: 65%
400 nm: 30%
Output Sensitivity
10 µV/e-
Read Noise
15 electrons
Dark Current
<10 pA/cm2 at 25 °C
Dark Current Doubling
Temperature
6.3 °C
Dynamic Range
76 dB
Charge Transfer Efficiency
>0.99999
Blooming Suppression
None
Maximum Data Rate
10 MHz
Package
CERDIP Package (sidebrazed)
Cover Glass
Clear or AR coated, 2 sides
Parameters above are specified at 25 °C, unless otherwise noted.
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Ordering Information
Catalog
Number
Product Name
Description
Marking Code
KAF- 0402-AAA-CB-B1
Monochrome, No Microlens, CERDIP Package (sidebrazed), Clear
Cover Glass (no coatings), Grade 1
KAF- 0402-AAA
S/N
KAF- 0402-AAA-CB-AE
Monochrome, No Microlens, CERDIP Package (sidebrazed), Clear
Cover Glass (no coatings), Engineering Sample
KAF- 0402-AAA-CP-B1
Monochrome, No Microlens, CERDIP Package (sidebrazed), Taped
Clear Cover Glass, no coatings, Grade 1
KAF- 0402-AAA-CP-B2
Monochrome, No Microlens, CERDIP Package (sidebrazed), Taped
Clear Cover Glass, no coatings, Grade 2
KAF- 0402-AAA-CP-AE
Monochrome, No Microlens, CERDIP Package (sidebrazed), Taped
Clear Cover Glass, no coatings, Engineering Sample
KAF- 0402-ABA-CD-B1
Monochrome, Telecentric Microlens, CERDIP Package (sidebrazed),
Clear Cover Glass with AR coating (both sides), Grade 1
KAF- 0402-ABA
S/N
KAF- 0402-ABA-CD-B2
Monochrome, Telecentric Microlens, CERDIP Package (sidebrazed),
Clear Cover Glass with AR coating (both sides), Grade 2
KAF- 0402-ABA-CD-AE
Monochrome, Telecentric Microlens, CERDIP Package (sidebrazed),
Clear Cover Glass with AR coating (both sides), Engineering Sample
KAF- 0402-ABA-CP-B1
Monochrome, Telecentric Microlens, CERDIP Package (sidebrazed),
Taped Clear Cover Glass, no coatings, Grade 1
KAF- 0402-ABA-CP-B2
Monochrome, Telecentric Microlens, CERDIP Package (sidebrazed),
Taped Clear Cover Glass, no coatings, Grade 2
KAF- 0402-ABA-CP-AE
Monochrome, Telecentric Microlens, CERDIP Package (sidebrazed),
Taped Clear Cover Glass, no coatings, Engineering Sample
KEK-4H0077-KAF-0402-12-5
Evaluation Board (Complete Kit)
N/A
See Application Note Product Naming Convention for a full description of the naming convention used for Truesense
Imaging image sensors. For reference documentation, including information on evaluation kits, please visit our web
site at www.truesenseimaging.com.
Please address all inquiries and purchase orders to:
Truesense Imaging, Inc.
1964 Lake Avenue
Rochester, New York 14615
Phone: (585) 784-5500
E-mail: info@truesenseimaging.com
Truesense Imaging reserves the right to change any information contained herein without notice. All information
furnished by Truesense Imaging is believed to be accurate.
KAF-0402 Image Sensor
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Device Description
ARCHITECTURE
KAF – 0402
Usable Active Image Area
768 (H) x 512 (V)
9 x 9 µm pixels
3:2 aspect ratio
768 Active Pixels/Line
4 Dark
10 Inactive
Vrd
R
Vdd
Vout
Vss
Sub
Vog
H1
H2
V1
V2
Guard
2 Inactive
12 Dark
4 Dark lines
4 Dark lines
Figure 1: Block Diagram
The sensor consists of 784 parallel (vertical) CCD shift registers each 520 elements long. These registers act as both
the photosensitive elements and as the transport circuits that allow the image to be sequentially read out of the
sensor. The parallel (vertical) CCD registers transfer the image one line at a time into a single 796-element (horizontal)
CCD shift register. The horizontal register transfers the charge to a single output amplifier. The output amplifier is a
two-stage source follower that converts the photo-generated charge to a voltage for each pixel.
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MICROLENSES
Microlenses are formed along each row. They are effectively half of a cylinder centered on the transparent gates,
extending continuously in the row direction. They act to direct the photons away from the polysilicon gate and through
the transparent gate. This increases the response, especially at the shorter wavelengths (< 600 nm).
Figure 2: Microlens
Floating
Diffusion
HCCD
Charge
Transfer
Source
Follower
#1
Source
Follower
#2
Vrd
R
Vog
H2
H2
H1
VDD
Vout
H1
Figure 3: Output Schematic
Output Structure
Charge presented to the floating diffusion is converted into a voltage and current amplified in order to drive off-chip
loads. The resulting voltage change seen at the output is linearly related to the amount of charge placed on the
floating diffusion. Once the signal has been sampled by the system electronics, the reset gate (R) is clocked to
remove the signal and the floating diffusion is reset to the potential applied by Vrd (see Figure 3). More signal at the
floating diffusion reduces the voltage seen at the output pin. In order to activate the output structure, an off-chip load
must be added to the Vout pin of the device such as shown in Figure 4.
V1
electrode
V2
electrode
Microlens
Silicon
KAF-0402 Image Sensor
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Dark Reference Pixels
There are 4 light shielded pixels at the beginning of each line, and 12 at the end. There are 4 dark lines at the start of
every frame and 4 dark lines at the end of each frame. Under normal circumstances, these pixels do not respond to
light. However, dark reference pixels in close proximity to an active pixel can scavenge signal depending on light
intensity and wavelength and therefore will not represent the true dark signal.
Dummy Pixels
Within the horizontal shift register are 10 leading additional pixels that are not associated with a column of pixels
within the vertical register. These pixels contain only horizontal shift register dark current signal and do not respond
to light. A few leading dummy pixels may scavenge false signal depending on operating conditions. There are two
more dummy pixels at the end of each line.
IMAGE ACQUISITION
An electronic representation of an image is formed when incident photons falling on the sensor plane create electron-
hole pairs within the sensor. These photon induced electrons are collected locally by the formation of potential wells
at each photogate or pixel site. The number of electrons collected is linearly dependent on light level and exposure
time and non-linearly dependent on wavelength. When the pixel's capacity is reached, excess electrons will leak into
the adjacent pixels within the same column. This is termed blooming. During the integration period, the V1 and V2
register clocks are held at a constant (low) level. See Figure 9.
CHARGE TRANSPORT
Referring again to Figure 9, the integrated charge from each photogate is transported to the output using a two-step
process. Each line (row) of charge is first transported from the vertical CCD to the horizontal CCD register using the
V1 and V2 register clocks. The horizontal CCD is presented a new line on the falling edge of V2 while H1 is held
high. The horizontal CCD then transports each line, pixel by pixel, to the output structure by alternately clocking the
H1 and H2 pins in a complementary fashion. On each falling edge of H2 a new charge packet is transferred onto a
floating diffusion and sensed by the output amplifier.
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PHYSICAL DESCRIPTION
Pin Description and Device Orientation
Pin 1
Pixel 1,1
1
2
3
4
5
6
7
8
9
10
11
12
VOG
Vout
VDD
VRD
R
24
23
22
21
20
19
18
17
16
15
14
13
Guard
V1
V1
Vsub
V2
V2
V2
V2
V1
H2
H1
VSS
V1
N/C
N/C
N/C
N/C
Vsub
N/C
Figure 4: Pinout Diagram
Pin
Name
Description
Pin
Name
Description
1
OG
Output Gate
24
N/C
No Connection
2
VOUT
Video Output
23
GUARD
Guard Ring
3
VDD
Amplifier Supply
22
V1
Vertical CCD Clock - Phase 1
4
VRD
Reset Drain
21
V1
Vertical CCD Clock - Phase 1
5
R
Reset Clock
20
V2
Vertical CCD Clock - Phase 2
6
VSS
Amplifier Supply Return
19
V2
Vertical CCD Clock - Phase 2
7
H1
Horizontal CCD Clock - Phase 1
18
V2
Vertical CCD Clock - Phase 2
8
H2
Horizontal CCD Clock - Phase 2
17
V2
Vertical CCD Clock - Phase 2
9
N/C
No Connection
16
V1
Vertical CCD Clock - Phase 1
10
N/C
No Connection
15
V1
Vertical CCD Clock - Phase 1
11
VSUB
Substrate
14
VSUB
Substrate
12
N/C
No Connection
13
N/C
No Connection
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Imaging Performance
SPECIFICATIONS
Electro-Optical
All values measured at 25 °C and nominal operating conditions. These parameters exclude defective pixels.
Description
Symbol
Min.
Nom.
Max
Units
Notes
Verification Plan
Saturation Signal
Vertical CCD capacity
Horizontal CCD capacity
Output Node capacity
Nsat
85000
170000
190000
100000
200000
220000
240000
electrons/pixel
1
design9
Quantum Efficiency
(see Figure 5)
design9
Photoresponse Non-Linearity
PRNL
1.0
2.0
%
2
Photoresponse Non-
Uniformity
PRNU
0.8
%
3
die8
Dark Signal
Jdark
15
6
30
10
electrons/pixel/sec
pA/cm2
4
die8
Dark Signal Doubling
Temperature
6.3
7
°C
design9
Dark Signal Non-Uniformity
DSNU
15
30
electrons/pixel/sec
5
die8
Dynamic Range
DR
72
76
dB
6
design9
Charge Transfer Efficiency
CTE
0.99997
0.99999
die8
Output Amplifier DC Offset
Vodc
Vrd
Vrd + 0.5
Vrd + 1.0
V
design9
Output Amplifier Sensitivity
Vout/Ne-
9
10
µV/e-
design9
Output Amplifier Output
Impedance
Zout
180
200
220
Ohms
design9
Noise Floor
ne-
15
20
electrons
7
Notes:
1. For pixel binning applications, electron capacity up to 330000 can be achieved with modified CCD inputs.
2. Worst case deviation from straight line fit, between 2% and 90% of Vsat.
3. One Sigma deviation of a 128 x 128 sample when CCD illuminated uniformly at half of saturation.
4. Average of all pixels with no illumination at 25 °C.
5. Average dark signal of any of 11 x 8 blocks within the sensor (each block is 128 x 128 pixels).
6. 20log (Nsat/ne-) at nominal operating frequency and 25 °C.
7. Noise floor is specified at the nominal pixel frequency and excludes any dark or pattern noises. It is dominated by the
output amplifier power spectrum with a bandwidth = 5 * pixel rate.
8. A parameter that is measured on every sensor during production testing.
9. A parameter that is quantified during the design verification activity.
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Typical Performance Curves
Figure 5: Typical Spectral Response
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
400 500 600 700 800 900 1000
Absolute Quantum Efficiency
Wavelength (nm)
KAF-0402 Spectral Response
KAF-0402 (with microlenses) KAF-0402 (no microlenses)
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Defect Definitions
SPECIFICATIONS
Defect tests performed at T = 25 °C.
Grade
Point Defect
Cluster Defect
Column Defect
C1
<5
0
0
C2
<10
<4
0
Dark Defects A pixel which deviates by more than 6% from neighboring pixels when illuminated to 70% of
saturation
Bright Defect A pixel whose dark current >5000 electrons/pixel/second at 25 °C
Cluster Defect A grouping of not more than 5 adjacent point defects
Column Defect A grouping of >5 contiguous point defects along a single column
A column containing a pixel with dark current >12,000 electrons/pixel/second at 25 °C (Bright
Column)
A column that does not meet the minimum vertical CCD charge capacity (Low charge capacity
column)
A column that loses >250 electrons under 2 Ke- (trap defect)
Neighboring Pixels The surrounding 128 x 128 pixels of ± 64 columns/rows
Defect Separation Column and cluster defects are separated by no less than 2 pixels in any direction (excluding
single pixel defects.
768,512
1,1
768,1
1,512
Figure 6: Active Pixel Region
KAF-0402 Image Sensor
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Operation
ABSOLUTE MAXIMUM RATINGS
Description
Symbol
Minimum
Maximum
Units
Notes
Diode Pin Voltages
Vdiode
0
20
V
1,2
Gate Pin Voltages
Vgate1
-16
16
V
1,3,5
Output Bias Current
Iout
-10
mA
4
Output Load Capacitance
Cload
15
pF
4
Notes:
1. Referenced to pin Vsub or between each pin in this group.
2. Includes pins: Vrd, Vdd, Vss, Vout.
3. Includes pins: V1, V2, H1, H2, Vog, Vlg. R.
4. Avoid shorting output pins to ground or any low impedance source during operation.
5. This sensor contains gate protection circuits to provide some protection against ESD events. The circuits will turn on when
greater than 16 volts appears between any two gate pins. Permanent damage can result if excessive current is allowed to
flow under these conditions.
Warning:
This device contains limited protection against Electrostatic Discharge (ESD). Devices should be handled in accordance
with strict ESD procedures for Class 0 devices (JESD22 Human Body Model) or Class A (Machine Model). Refer to
Application Note Image Sensor Handling and Best Practices.
DC BIAS OPERATING CONDITIONS
Description
Symbol
Minimum
Nominal
Maximum
Units
Max DC Current (mA)
Notes
Reset Drain
Vrd
10
11.0
11.5
V
0.01
Output Amplifier Return
Vss
1.5
2.0
2.5
V
-0.5
Output Amplifier Supply
Vdd
14.75
15
15.5
V
Iout
Substrate
Vsub
0
0
0
V
0.01
Output Gate
Vog
3.75
4
5
V
0.01
Guard Ring
Vlg
8.0
9.0
12.0
V
0.01
Video Output Current
Iout
-5
-10
mA
-
1
Notes:
1. An output load sink must be applied to Vout to activate output amplifier - see Figure 7 below.
+15V
0.1uF
Vout
Buffered Output
1k
140
2N3904 or equivalent
~5ma
Figure 7: Example Output Structure Load Diagram
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AC OPERATING CONDITIONS
Clock Levels
Description
Symbol
Level
Minimum
Nominal
Maximum
Units
Effective Capacitance
Vertical CCD Clock - Phase 1
V1
Low
-10.5
-10.0
-9.5
V
6 nF (all ØV1 pins)
Vertical CCD Clock - Phase 1
V1
High
-0.5
0
1.0
V
6 nF (all ØV1 pins)
Vertical CCD Clock - Phase 2
V2
Low
-10.5
-10.0
-9.5
V
6 nF (all ØV1 pins)
Vertical CCD Clock - Phase 2
V2
High
-0.5
0
1.0
V
6 nF (all ØV1 pins)
Horizontal CCD Clock - Phase 1
H1
Low
-4.5
-4.0
-3.5
V
50 pF
Horizontal CCD Clock - Phase 1
H1
Amplitude
9.5
10.0
10.5
V
50 pF
Horizontal CCD Clock - Phase 2
H2
Low
-4.5
-4.0
-3.5
V
50 pF
Horizontal CCD Clock - Phase 2
H2
Amplitude
9.5
10.0
10.5
V
50 pF
Reset Clock
R
Low
-3.0
-2.0
-1.75
V
5 pF
Reset Clock
R
Amplitude
5.0
6.0
7.0
V
5 pF
Notes:
1. All pins draw less than 10 µA DC current.
2. Capacitance values relative to VSUB.
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Timing
REQUIREMENTS AND CHARACTERISTICS
Description
Symbol
Minimum
Nominal
Maximum
Units
Notes
H1, H2 Clock Frequency
fH
4
10
MHz
1, 2, 3
Pixel Period (1 Count)
tpix
100
250
ns
H1, H2 Set-up Time
tHS
0.5
1
μs
V1, V2 Clock Pulse Width
tV
1.5
2
μs
2
Reset Clock Pulse Width
tR
10
20
ns
4
Readout Time
treadout
43.7
107
ms
5
Integration Time
tint
6
Line Time
tline
84.1
206
μs
7
Notes:
1. 50% duty cycle values.
2. CTE may degrade above the nominal frequency.
3. Rise and fall times (10/90% levels) should be limited to 5-10% of clock period. Crossover of register clocks should be
between 40-60% of amplitude.
4. R should be clocked continuously
5. treadout = (520 * tline)
6. Integration time (tint) is user specified. Longer integration times will degrade noise performance due to dark signal fixed
pattern and shot noise
7. tline = (3 * tV) + tHS + (796* te) + te
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FRAME TIMING
Frame Timing
Treadout
Line
1
2
519
520
1 Frame = 520 Lines
V1
V2
H1
H2
tint
Figure 8: Frame Timing Diagram
LINE TIMING AND PIXEL TIMING
Pixel Timing
Detail
R
H1
H2
Vout
tR
Vsat
Vdark
Vsub
Vodc
1 count
te
Line Timing
Detail
1 line = 796 Pixels
V1
V2
H1
H2
R
796 counts
tHS
te
tV
tV
Vpix
Line Content
Photoactive
Pixels
Dark Reference
Pixels
Dummy Pixels
1-10
11-14
15 - 782
783-794
795-796
Vsat Saturated pixel video output
signal
Vdark Video output signal in no light situation, not zero due to
Jdark
Vpix Pixel video output signal level, more electrons =more
negative*
Vodc Video level offset with respect to
vsub
Vsub Analog
Ground
* See Image Aquisition section
(page 4)
Figure 9: Line and Pixel Timing Diagrams
KAF-0402 Image Sensor
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Storage and Handling
STORAGE CONDITIONS
Description
Symbol
Minimum
Maximum
Units
Notes
Storage
Temperature
TST
100
°C
Humidity
RH
5
90
%
1
Notes:
1. T = 25 °C. Excessive humidity will degrade MTTF.
ESD
1. This device contains limited protection against
Electrostatic Discharge (ESD). ESD events may
cause irreparable damage to a CCD image sensor
either immediately or well after the ESD event
occurred. Failure to protect the sensor from
electrostatic discharge may affect device
performance and reliability.
2. Devices should be handled in accordance with
strict ESD procedures for Class 0 (<250 V per
JESD22 Human Body Model test), or Class A
(<200 V JESD22 Machine Model test) devices.
Devices are shipped in static-safe containers and
should only be handled at static-safe
workstations.
3. See Application Note Image Sensor Handling Best
Practices for proper handling and grounding
procedures. This application note also contains
workplace recommendations to minimize
electrostatic discharge.
4. Store devices in containers made of electro-
conductive materials.
COVER GLASS CARE AND CLEANLINESS
1. The cover glass is highly susceptible to particles
and other contamination. Perform all assembly
operations in a clean environment.
2. Touching the cover glass must be avoided.
3. Improper cleaning of the cover glass may
damage these devices. Refer to Application Note
Image Sensor Handling Best Practices.
ENVIRONMENTAL EXPOSURE
1. Extremely bright light can potentially harm CCD
image sensors. Do not expose to strong sunlight
for long periods of time, as the color filters
and/or microlenses may become discolored. In
addition, long time exposures to a static high
contrast scene should be avoided. Localized
changes in response may occur from color
filter/microlens aging. For Interline devices, refer
to Application Note Using Interline CCD Image
Sensors in High Intensity Visible lighting
Conditions.
2. Exposure to temperatures exceeding maximum
specified levels should be avoided for storage
and operation, as device performance and
reliability may be affected.
3. Avoid sudden temperature changes.
4. Exposure to excessive humidity may affect
device characteristics and may alter device
performance and reliability, and therefore should
be avoided.
5. Avoid storage of the product in the presence of
dust or corrosive agents or gases, as
deterioration of lead solderability may occur. It is
advised that the solderability of the device leads
be assessed after an extended period of storage,
over one year.
SOLDERING RECOMMENDATIONS
1. The soldering iron tip temperature is not to
exceed 370 °C. Higher temperatures may alter
device performance and reliability.
2. Flow soldering method is not recommended.
Solder dipping can cause damage to the glass
and harm the imaging capability of the device.
Recommended method is by partial heating using
a grounded 30 W soldering iron. Heat each pin
for less than 2 seconds duration.
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Mechanical Information
COMPLETED ASSEMBLY
Figure 10: Completed Assembly (1 of 2)
KAF-0402 Image Sensor
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Figure 11: Completed Assembly (2 of 2)
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Quality Assurance and Reliability
QUALITY AND RELIABILITY
All image sensors conform to the specifications stated in this document. This is accomplished through a combination
of statistical process control and visual inspection and electrical testing at key points of the manufacturing process,
using industry standard methods. Information concerning the quality assurance and reliability testing procedures and
results are available from Truesense Imaging upon request. For further information refer to Application Note Quality
and Reliability.
REPLACEMENT
All devices are warranted against failure in accordance with the Terms of Sale. Devices that fail due to mechanical and
electrical damage caused by the customer will not be replaced.
LIABILITY OF THE SUPPLIER
A reject is defined as an image sensor that does not meet all of the specifications in this document upon receipt by the
customer. Product liability is limited to the cost of the defective item, as defined in the Terms of Sale.
LIABILITY OF THE CUSTOMER
Damage from mishandling (scratches or breakage), electrostatic discharge (ESD), or other electrical misuse of the
device beyond the stated operating or storage limits, which occurred after receipt of the sensor by the customer, shall
be the responsibility of the customer.
TEST DATA RETENTION
Image sensors shall have an identifying number traceable to a test data file. Test data shall be kept for a period of 2
years after date of delivery.
MECHANICAL
The device assembly drawing is provided as a reference.
Truesense Imaging reserves the right to change any information contained herein without notice. All information
furnished by Truesense Imaging is believed to be accurate.
Life Support Applications Policy
Truesense Imaging image sensors are not authorized for and should not be used within Life Support Systems without
the specific written consent of Truesense Imaging, Inc.
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©Truesense Imaging Inc., 2012. TRUESENSE is a registered trademark of Truesense Imaging, Inc.
Revision Changes
MTD/PS-0509
Revision Number
Description of Changes
1.0
Corrected Figure 4
Updated DC Operating Conditions, Section 2.4.
Updated CCD Parameters Specific to Low Gain (high dynamic range) Output Amplifier (page 13)
2.0
Corrected Figure 4. (Pixel locations incorrect.)
Updated DC Operating Conditions for Output Gate (Section 2.4).
Updated CCD parameters Specific to Low Gain (High Dynamic Range) Output Amplifier for Dynamic Range (page 13).
Removed appendix.
3.0
First version of the document in S9K. Formerly Revision 2 in hard copy format.
Removed Class 0 from the Cosmetic Specification and UV coated device. (Section 3.2)
Added ESD classification. (Section 2.3)
Replaced Quality and Reliability notes with current format. (Section 4.2)
4.0
Update specification format
Updated Completed Assembly Drawing
5.0
Removed 4H0333
PS-0028
Revision Number
Description of Changes
1.0
Initial release with new document number, updated branding and document template
Updated Storage and Handling and Quality Assurance and Reliability sections