MSS-39,000 SERIES P-TYPE SCHOTTKY DETECTOR DIODES is marei ne) [ess CORPORATION FEATURES e LowR, e Extremely Low I/f Noise e Low TSS e Strong Beam Leads e Tight Batch Matching Available e Hi-Rel Available (MIL-S-19500, MIL-STD-750) MAXIMUM RATINGS Operating Temperature ............. -65C to + 150C Storage Temperature ............... -65C to + 150C CW Power Dissipation ..........0..0000 0c eee 100 mW (derated to zero at + 150C) Soldering Temperature .............. + 230C for 5 sec. Beam Lead Puli Strength, Min ................ 4 grams CAUTION: Static Sensitive Device CH =a mH ot Pe oo a APPLICATIONS e Biased Detector e Unbiased Power Monitor (>-15 dBm) e Low I/f Noise Mixer/Phase Comparator CHIP & PACKAGE: ELECTRICAL SPECIFICATIONS AT 25C Tangential Ver Ve ct Sensitivity Sensitivity berating Mode!-Case @ 10 pA @1mA Tss 4 y Style* (Volts) (Volts) (pF) (dBm) (mV/mW) (GHz) MIN TYP MAX TYP! TYP MAX MSS-39, 045-C15 5.0 40 10 - - 18 MSS-39, 045-P55 5.0 .40 25 -58 5000 18 MSS-39, 045-P86 5.0 -40 27 -58 5000 18 MSS-39, 048-C15 5.0 39 15 - - 12 MSS-39, 048-P55 5.0 39 .30 -58 5000 12 MSS-39, 048-P86 5.0 39 32 -8 000 12 BEAM LEAD DIODES: ELECTRICAL SPECIFICATIONS AT 25C Tangential Operati Ver Ve Ct Sensitivity Sensitivity Frequency Model-Case @ 10 pA @ima Tss Y y Style* (Volts) (Volts) (pF) (dBm) (mV/mW) (GHz) MIN TYP MAX Typ! TYP MAX MSS-3S, 148-B10 3.5 39 12 - - 18 MSS-39, 148-E20 3.5 39 22 -58 5000 18 MSS-39, 148-H20 3.5 39 30 -58 5000 12 MSS-39, 152-B10 3.5 38 18 - - 12 MSS-39, 152-E20 3.5 38 28 -58 5000 12 MSS-39, 152-H20 3.5 38 36 -58 5000 18 1 20uA bias, RL = 100kQ, VIDEO BW = 2 MHz. * Parts are available in other package styles see outline drawings.State-of-the-Art Microwave Diodes BIASED DETECTOR SCHOTTKY DESCRIPTION The Metelics MSS-39,000 Series P-type silicon Schottky barrier diodes are constructed using advanced technology, materials and processes, resulting in a lower series resistance (Rs) than is produced with conventional methods. This type of Schottky diode is most often used as a biased de- tector where its low Rg results in an improved tangential signal sensitivity. This diode will self-rectify and can be used without bias for DC coupled large signal (-15 to + 20 dBm) detector applications. For most sampler applications, the MSS-50,000 Series high barrier Schottky diode is recommended because of its very low Rs. However, if a diode with high reverse breakdown voltage is needed because of either signal or drive level, this diode is recommended. This diode offers exceptionally low I/f noise for use in mixers and phase detectors where the output frequency is in the audio range. TYPICAL Ir vs. Vp CURVE 100 ms 40 = E 10 a MSS-39, 048-P55 wl 1G 20 40 60 80 1.00 1.20 1.40 Ve (V) TYPICAL DETECTOR OUTPUT CURVE 10v Bias = 20 yA Lenn vy LPL ka 7 V 60 -40 -20 0 +20 Pin (dBm) 975 Stewart Drive * Sunnyvale, California 94086 * 408-737-8181 SMITH IMPEDANCE CHART 50Q Reference 1mA, +'/2dBm A-Inect B-Ilrect = 2mA, +3 dBm B-lIpecy = 4mA, +6 dBm EQUIVALENT CIRCUITS PACKAGED FAX: 408-733-7645 Date: 3-15-90