Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Hybrid IC
IGBT Gate Driver
VLA503
1Rev. 2/06
Description:
The VLA503 is a hybrid
integrated circuit designed to
provide optimum gate drive
for IGBT modules. This device
provides high current optically
isolated gate drive with a large
output voltage swing. The driver
also provides short circuit
protection based on desaturation
detection.
Features:
£ Electrical Isolation Voltage
Between Input and Output
with Opto-coupler
(2500 Vrms for 1 Minute)
£ Two Supply Driver Topology
£ Built-in Short-Circuit Protection
(With a Pin for Fault Output)
£ TTL Compatible Input Interface
Application:
To drive IGBT modules for inverter
or AC servo systems applications
Recommended IGBT Modules:
600V module up to 600A
1200V module up to 1400A
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 2.0 51.0
B 1.02 26.0
C 0.4 10.0
D 0.45 11.5
E 0.12 3.0
F 0.3 7.5
G 0.25 6.5
H 0.10 2.54
J 0.02+0.006/-0.004 0.5+0.15/-0.1
K 0.18±0.06 4.5±1.5
L 0.01+0.01/-0.004 0.25+0.2/-0.1
Note: All dimensions listed are maximums except H, J,
K, and L.
DETECT
CIRCUIT
LATCH
TIMER AND
RESET
CIRCUIT
INTERFACE
OPTO COUPLER
180
VCC
CONTROL PIN
FOR ttrip
DETECT PIN
VO
VEE
FAULT OUTPUT
13
GATE
SHUTDOWN
CIRCUIT
C
L
E F
14
3 , 7 , 9 , 10 PIN : NC
6
8
5
1
2
4
14
1
A
B
K
J
D G
H
VLA503
Hybrid IC IGBT Gate Driver
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
2 Rev. 2/06
Absolute Maximum Ratings, Ta = 25°C unless otherwise specified
Characteristics Symbol VLA503 Units
Supply Voltage, DC VCC 18 Volts
VEE -15 Volts
Input Signal Voltage (Applied between Pin 13 - 14, 50% Duty Cycle, Pulse Width 1ms) Vi -1 ~ +7 Volts
Output Voltage (When the Output Voltage is "H") VO VCC Volts
Output Current IOHP -5 Amperes
(Pulse Width 2µs, f 20kHz) IOLP 5 Amperes
Isolation Voltage (Sine Wave Voltage 60Hz, for 1 Minute) VISO 2500 Vrms
Case Temperature TC 85 °C
Operating Temperature (No Condensation Allowable) T
opr -20 ~ +60 °C
Storage Temperature (No Condensation Allowable) Tstg -25 ~ +100* °C
Fault Output Current (Applied Pin 8) IFO 20 mA
Input Voltage at Pin 1 (Applied Pin 1) VR1 50 Volts
*Differs from H/C condition.
Electrical and Mechanical Characteristics, Ta = 25°C unless otherwise specified, VCC = 15V, VEE = -10V)
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Supply Voltage VCC Recommended Range 14 15 Volts
VEE Recommended Range -7 -10 Volts
Pull-up Voltage on Primary Side VIN Recommended Range 4.75 5 5.25 Volts
"H" Input Current IIH Recommended Range 15.2 16 19 mA
Switching Frequency f Recommended Range 20 kHz
Gate Resistance RG Recommended Range 2 Ω
"H" Input Current IIH VIN = 5V 16 mA
"H" Output Voltage VOH 13 14 Volts
"L" Output Voltage VOL -8 -9 Volts
"L-H" Propagation Time tPLH IIH = 16mA 0.5 1 µs
"L-H" Rise Time tr IIH = 16mA 0.3 1 µs
"H-L" Propagation Time tPHL IIH = 16mA 1 1.3 µs
"H-L" Fall Time tf IIH = 16mA 0.3 1 µs
Timer ttimer Between Start and Cancel 1 2 ms
(Under Input Sign "L")
Fault Output Current IFO Applied 8 Pin, R = 4.7kΩ 5 mA
Controlled Time Detect Short-Circuit 1 ttrip1 Pin 1: 15V and More, Pin 2: Open 2.6 µs
Controlled Time Detect Short-Circuit 2** ttrip2 Pin 1: 15V and More, Pins 2-4: 10pF 3 µs
(Connective Capacitance)
SC Detect Voltage VSC Collector Voltage of Module 15 Volts
**Length of wiring capacitor controlled time detect short-circuit is within 5cm from Pin 2 and Pin 4 coming and going.
VLA503
Hybrid IC IGBT Gate Driver
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
3Rev. 2/06
VLA503
+
+
+
14 13 10 9 8 6 5 4 3 2 1
+
+
VCC
VEE
IGBT
MODULE
18V
18V
G
C
E
E
4.7k
B1
+5V
CONTROL
FAULT
30V
RG
C2C1
D1
Ctrip
PS2501
Component Selection:
Design Description
VCC, VEE +15V/-10V Typical, See data sheet for usable limits
RG Adjust for application requirements. See IGBT module application notes
for recommendations and power rating
C1, C2 10µF-100µF 25V low impedance electrolytic
D1 Ultra fast recovery trr<100ns, High voltage Vrrm>Vces(IGBT)
Ctrip 0-200pF adjusts desaturation trip time (ttrip)
B1 CMOS Buffer 74HC04 or similar – Must actively pull high to maintain noise immunity
Notes:
(1) Power supply decoupling capacitors C1 and C2 should be connected as close as possible to the pins of the
gate driver and must be sized to have appropriate ESR and ripple current capability for the IGBT being driven.
(2) Ctrip should be connected as close as possible to the pins of the gate driver to avoid noise pick-up.
(3) All zener diodes 1W, all resistors 0.25W unless otherwise noted.
VLA503
+
+
14 13 10 9 8 6 5 4 3 2 1
+
+
VCC
IGBT
MODULE
18V
18V
G
C
E
E
4.7k
2.7k
8.2V
B1
+5V
CONTROL
FAULT
30V
RG
C2C1
D1
Ctrip
PS2501
Application Circuit
Single Supply Operation
VLA503
Hybrid IC IGBT Gate Driver
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
4 Rev. 2/06
5
3
4
2
1
0 20 6040 80
AMBIENT TEMPERATURE, Ta, (°C)
POWER DISSIPATION, PD, (WATTS)
0
25
15
20
10
5
0 10 3020 40
SUPPLY VOLTAGE, VCC, (VOLTS)
(PIN: 4 – 6)
QUIESCENT CURRENT, ID, (mAMPERES)
0
tPLH
tPHL
1.0
1.6
1.4
1.2
0.8
0.6
0.2
0.4
0 20 40 60 80
AMBIENT TEMPERATURE, Ta, (°C)
PROPAGATION DELAY TIME “L-H”, tPLH, (µs)
PROPAGATION DELAY TIME “H-L”, tPHL, (µs)
0
VCC = 15V
VEE = 10V
RG= 3.1
VIN = 5.0V
LOAD: CM400DY-24NF
tPLH
tPHL
1.0
1.6
1.4
1.2
0.8
0.6
0.2
0.4
3.5 4.0 4.5 5.0 5.5 6.0
INPUT SIGNAL VOLTAGE, Vi, (VOLTS)
PROPAGATION DELAY TIME “L-H”, tPLH, (µs)
PROPAGATION DELAY TIME “H-L”, tPHL, (µs)
0
VCC = 15V
VEE = 10V
RG= 3.1
Ta = 25°C
LOAD: CM400DY-24NF
6
5
4
3
2
0 20 6040 80
AMBIENT TEMPERATURE, Ta, (°C)
CONTROLLED TIME SHORT-CIRCUIT
DETECT, ttrip1, ttrip2, (µs)
0
1
VCC = 15V
VEE = -10V
ttrip2 : Ctrip = 10pF
ttrip1 : Ctrip = 0pF
9
5
6
7
8
4
3
2
0 25 75 100 12550 150
CONNECTIVE CAPACITANCE, Ctrip, (pF)
(PIN: 2 – 4)
CONTROLLED TIME SHORT-CIRCUIT
DETECT, ttrip, (µs)
0
1
VCC = 15V
VEE = -10V
Ta = 25°C
Ta = 25°C
PROPAGATION DELAY TIME VS.
AMBIENT CHARACTERISTICS
(TYPICAL)
PROPAGATION DELAY TIME VS.
INPUT VOLTAGE CHARACTERISTICS
(TYPICAL)
PROPAGATION DELAY TIME VS.
AMBIENT TEMPERATURE CHARACTERISTICS
(TYPICAL)
POWER DISSIPATION VS. AMBIENT TEMPERATURE
CHARACTERISTICS (MAXIMUM RATING)
(TYPICAL)
SWITCHING TIME DEFINITIONS
QUIESCENT CURRENT VS. SUPPLY VOLTAGE
CHARACTERISTICS (PIN: 4 – 6)
INPUT SIGNAL “L (TYPICAL)
CONTROLLED TIME SHORT-CIRCUIT DETECT VS.
CONNECTIVE CAPACITANCE CHARACTERISTICS
(TYPICAL)
VIN
(PIN 14 TO 13)
VO
(PIN 5 TO 6) tPLH tPHL
90%
50%
10%
trtf
VLA503
Hybrid IC IGBT Gate Driver
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
5Rev. 2/06
General Description
The VLA503 is a hybrid integrated circuit designed
to provide gate drive for high power IGBT modules.
This circuit has been optimized for use with Powerex
NF-Series and A-Series IGBT modules. However,
the output characteristics are compatible with most
MOS gated power devices. The VLA503 features a
compact single-in-line package design. The upright
mounting minimizes required printed circuit board space
to allow efficient and flexible layout. The VLA503
converts logic level control signals into fully isolated
+15V/-8V gate drive with up to 5A of peak drive current.
Control signal isolation is provided by an integrated high
speed opto-coupler. Short circuit protection is provided
by means of destauration detection.
Short Circuit Protection
Figure 1 shows a block diagram of a typical desatura-
tion detector. In this circuit, a high voltage fast recovery
diode (D1) is connected to the IGBT’s collector to moni-
tor the collector to emitter voltage. When the IGBT is
in the off state, VCE is high and D1 is reverse biased.
With D1 off the (+) input of the comparator is pulled up
to the positive gate drive power supply (V+) which is
normally +15V. When the IGBT turns on, the compara-
tors (+) input is pulled down by D1 to the IGBT’s VCE(sat).
The (-) input of the comparator is supplied with a fixed
voltage (VTRIP). During a normal on-state condition
the comparator’s (+) input will be less than VTRIP and
it’s output will be low. During a normal off-state condi-
tion the comparator’s (+) input will be larger than VTRIP
and it’s output will be high. If the IGBT turns on into a
short circuit, the high current will cause the IGBT’s col-
lector-emitter voltage to rise above VTRIP even though
the gate of the IGBT is being driven on. This abnormal
presence of high VCE when the IGBT is supposed to
be on is often called desaturation. Desaturation can
be detected by a logical AND of the driver’s input signal
and the comparator output. When the output of the AND
goes high a short circuit is indicated. The output of the
AND can be used to command the IGBT to shut down in
order to protect it from the short circuit. A delay (tTRIP)
must be provided after the comparator output to allow
for the normal turn on time of the IGBT. The tTRIP delay
is set so that the IGBTs VCE has enough time to fall
below VTRIP during normal turn on switching. If tTRIP
is set too short, erroneous desaturation detection will
occur. The maximum allowable tTRIP delay is limited by
the IGBT’s short circuit withstanding capability. In typical
applications using Powerex IGBT modules the recom-
mended limit is 10µs.
Operation of the VLA503 Desaturation Detector
The Powerex VLA503 incorporates short circuit pro-
tection using desaturation detection as described
above. A flow chart for the logical operation of the
short-circuit protection is shown in Figure 2. When a
desaturation is detected the hybrid gate driver performs
a soft shut down of the IGBT and starts a timed (ttimer)
1.5ms lock out. The soft turn-off helps to limit the tran-
sient voltage that may be generated while interrupting
the large short circuit current flowing in the IGBT. During
the lock out the driver pulls Pin 8 low to indicate the fault
status. Normal operation of the driver will resume after
the lock-out time has expired and the control input signal
returns to its off state.
Adjustment of Trip Time
The VLA503 has a default short-circuit detection
time delay (tTRIP) of approximately 2.5µs. This will
prevent erroneous detection of short-circuit conditions
as long as the series gate resistance (RG) is near the
minimum recommended value for the module being
used. The 2.5µs delay is appropriate for most applica-
tions so adjustment will not be necessary. However, in
some low frequency applications it may be desirable to
use a larger series gate resistor to slow the switching of
the IGBT, reduce noise, and limit turn-off transient volt-
ages. When RG is increased, the switching delay time
of the IGBT will also increase. If the delay becomes
GATE
DRIVE
IGBT
MODULE
AND
INPUT
V+
D1
Vtrip
C
E
G
E
RG
DELAY
ttrip COMPARE
SHUTDOWN
+
Figure 1. Desaturation Detector
VLA503
Hybrid IC IGBT Gate Driver
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
6 Rev. 2/06
NO
START
IS
VCE > VSC
IS
VCE > VSC
IS
INPUT
SIGNAL
ON
SLOW SHUTDOWN
DISABLE OUTPUT
SET FAULT SIGNAL
WAIT ttimer
IS
INPUT
SIGNAL
OFF
YES
NO
DELAY
ttrip
YES
YES
YES
YES
YES
NO
NO
CLEAR FAULT
SIGNAL
ENABLE OUTPUT
Figure 2. VLA503-01 Desaturation Detector
-5V
10V 10V
ttimer
ttrip
VO
(PIN 23)
FAULT SIGNAL
(PIN 28)
Figure 3. Adjustment of ttrip
long enough so that the voltage on the detect Pin 1 is
greater than VSC at the end of the tTRIP delay the driver
will erroneously indicate that a short circuit has occurred.
To avoid this condition the VLA503 has provisions for
extending the tTRIP delay by connecting a capacitor
(CTRIP) between Pin 2 and VCC (Pins 4). The effect of
adding CTRIP on trip time is shown in Figure 3. If tTRIP
is extended care must be exercised not to exceed the
short-circuit withstanding capability of the IGBT mod-
ule. Normally this will be satisfied for Powerex NF and
A-Series IGBT modules as long as the total shut-down
time does not exceed 10µs.