960-1215 MHz 90 W 2-Stage GaN Module
Surface Mount Laminate Package
Rev. V2
MAMG-000912-090PSM
2
2
2
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Electrical Specifications 6
Parameter Symbol Min. Typ. Max. Typ. Typ. Units
RF FUNCTIONAL TESTS: Freq. = 960-1215 MHz, VDD = 50 V, IDQ = 300 mA, TA = 25°C, ZL = 50 Ω, Pulse Width = 300 us,
Duty Cycle = 10%, PIN = 19 dBm
Frequency f 960 1090 1215 MHz
Peak Output Power 7 POUT 90 95 - 105 105 W
Power Gain GP - 30 - 31 31 dB
Power Added Efficiency PAE 55 58 - 63 63 %
Pulse Droop 8 Droop - 0.2 0.3 0.2 0.2 dB
2nd Harmonic 2F0 - -30 - -30 -30 dBc
3rd Harmonic 3F0 - -40 - -40 -40 dBc
Load Mismatch Stability VSWR-S - 5:1 - 5:1 5:1 -
Load Mismatch Tolerance VSWR-T - 6:1 - 6:1 6:1 -
6. Typical RF performance measured in RF evaluation board (see layout on page 3).
7. Peak output power measured at center of pulse.
8. Pulse droop measured between 10% and 90% of pulse.
Parameter Absolute Maximum
Input Power 24 dBm
Drain Supply Voltage (pulsed), VDD +55 V
Gate Supply Voltage Range, VGG -9 V to -2.5 V
Supply Current, IDD 4.0 A
Power Dissipation, Pulsed Mode @ 85ºC 80 W
Junction Temperature14 200 °C
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
ESD Maximum - Human Body Model (HBM) 600 V
ESD Maximum - Charged Device Model (CDM) 300 V
Absolute Maximum Ratings 9,10,11,12,13
9. Exceeding any one or combination of these limits may cause permanent damage to this device.
10. MACOM does not recommend sustained operation near these survivability limits.
11. For saturated performance it is recommended that the sum of (3 * VDD + abs (VGG)) < 175 V.
12. CW operation is not recommended.
13. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours. Junction temperature directly affects device MTTF
and should be kept as low as possible to maximize lifetime.
14. Junction Temperature (TJ) = TC + ӨJC * ((V * I) - (POUT - PIN)).
Typical Transient Thermal Resistance ӨJC = 1.6 °C/W (50V, 600 μs pulses, 10% duty cycle)