International Rectifier HEXFET Power MOSFET Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low Isolated Package High Voltage Isolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm 175C Operating Temperature Dynamic dv/dt Rating Low Thermal Resistance PD-9.753 IRFIZ44G Voss = 60V Rpsvon) = 0.0280 5 Ip = 30A on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK Absolute Maximum Ratings Parameter Max. Units Ip @ Te = 25C Continuous Drain Current, Ves @ 10 V 30 Ip @ Te = 100C _ | Continuous Drain Current, Vas @ 10 V 21 A Ibm Pulsed Drain Current 120 Pp @ Tc = 25C _ | Power Dissipation 48 Ww Linear Derating Factor 0.32 WC Ves Gate-to-Source Voltage +20 Vv Eas Single Pulse Avalanche Energy @ 100 mJ dv/dt Peak Diode Recovery dv/dt 4.5 Vins Ty Operating Junction and -65 to +175 Tst Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting Torque, 6-32 or M3 screw 10 Ibfein (1.1 Nem) Thermal Resistance Parameter Min. Typ. Max. Units Rasc Junction-to-Case = = 3.1 CAN Raia Junction-to-Ambient _ _ 65 869IRFIZ44G | Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions Vierjoss Drain-to-Source Breakdown Voltage 60 = _ V__| Vas=0V, Ib= 250uA AV erypss/ATy| Breakdown Voltage Temp. Coefficient |0.060] | V/C | Reference to 25C, ip= 1mA Rpsvon) Static Drain-to-Source On-Resistance = |0.028| Q | Vas=10V, In=18A Vasith) Gate Threshold Voltage 2.0 _ 4.0 VV | Vos=Ves, Ip= 250uA Cis Forward Transconductance 15 _ S| Vos=25V, Ip=18A @ loss Drain-to-Source Leakage Current | | 25 uA Vos=60V, Ves=0V _ 250 Vos=48V, Vas=0V, Ty=150C lass Gate-to-Source Forward Leakage _ _ 100 nA Vas=20V Gate-to-Source Reverse Leakage _ | -100 Ves=-20V Qg Total Gate Charge _ _ 95 lp=52A Qgs Gate-to-Source Charge _ 27 nC | Vps=48V Qga Gate-to-Drain ("Miller") Charge _ 46 Vas=10V See Fig. 6 and 13 ta(on) Turn-On Delay Time _ 19 _ Vpp=30V tr Rise Time | 120 _ ns Ip=52A ta(ott) Turn-Off Delay Time _ 55 _ Re=9.192 tt Fall Time = 86 = Rp=0.549 See Figure 10 Lo Internal Drain Inductance - 45 _ ao goad ) nH | from package (i= Ls Internal Source Inductance | 75 | and center of die contact 8 Ciss Input Capacitance | 2500) Ves=0V Coss Output Capacitance | 1200; pF | Vps= 25V Ciss Reverse Transfer Capacitance _ 200 _ f=1,.0MHz See Figure 5 Cc Drain to Sink Capacitance _ 12 _ pF | f=1.0MHz Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current _ _ 30 MOSFET symbol D (Body Diode) A showing the ; Ism Pulsed Source Current _ | 120 integral reverse Ce (Body Diode) p-n junction diode. 8 Vsp Diode Forward Voltage _ _ 25 Vs | Ty=25C, Is=30A, Vas=0V ter Reverse Recovery Time _ 140 | 300 ns | Ty=25C, fr=52A Qr Reverse Recovery Charge _ 1.2 | 28 | pC |di/dt=100A/us ton Forward Turn-On Time Intrinsic tum-on time is neglegible (turn-on is dominated by Ls+Lp) Notes: @ Repetitive rating; pulse width limited by Isp<52A, di/dt<250A/1s, VopsViar)pss, t-60s, f=60Hz max. junction temperature (See Figure 11) Tyst175C Vpp=25V, starting Ty=25C, L=129WH @ Pulse width < 300 ps; duty cycle <2%. Re=25Q, las=30A (See Figure 12) 870Ip, Drain Current (Amps) Ip, Drain Current (Amps) 4.Y 20us PULSE WIDTH To = 25C 107 so! Vps. Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To=25C 101 10 Vog = 25V 20us PULSE WIDTH 4 8 10 Ves, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics Ros(on) Drain-to-Source On Resistance Ip, Drain Current (Amps) (Normalized) IRFIZ44G 20us PULSE WIDTH To = 175C tovd 10 sot Vps, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, To=175C Vv, = 10V -40-20 0 40 60 80 100 140 160 180 Ty, Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 871IRFIZ44G Capacitance (pF) Isp, Reverse Drain Current (Amps) 5000 _ Cgs + Cgg. Cys SHORTED Coa 4000 Cds + 3000 2000 1000 Veg, Gate-to-Source Voltage (volts) FOR TEST CIRCUIT SEE FIGURE 13 {00 to! 0 20 40 60 80 100 Vos, Drain-to-Source Voltage (volts) Qe, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 102 Bea z 102 Bos 3 O 2 & 10 1 a 40 2 Os Tp=25C 2 T y=175C Ves = OV 0. 1.1 1 af E O 2 5 4 2 5 10 2 5 402 2 5 104 Vsp, Source-to-Drain Voltage (volts) Vos, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 872!p, Drain Current (Amps) 30 24 fe Fig 9. Tc, Case Temperature (C) Maximum Drain Current Vs. Case Temperature Thermal Response (Zgjc) 0.4 1072 Fig 11. 1 1 1074 ty, Rectangular Pulse Duration (seconds) Maximum Effective Transient Thermal Impedance, Junction-to-Case 1 IRFIZ44G Vos WA D.U.T. K "Vop YE10v Pulse Width < tps Duty Factor < 0.1% ee Fig 10a. Switching Time Test Circuit oe NN 10% t Ves / | taon) tr tajot tt | | | | | | | | | t Fig 10b. Switching Time Waveforms Pa 4 ad te | NOTES: 1. DUTY FACTOR, D=ty/to 2, PEAK T, x + 7 1072 0.4 1 10 873IRFIZ44G | Vary tp to obtain Vps AD. required las tk: Yop 250 200 0.010 150 100 50 Eas, Single Pulse Energy (mJ) = 25V Vps-| / 25 50 75 400 125 150 175 Starting Ty, Junction Temperature(C) as TT Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current Current Regulator Ves ama FIL Ig = I Charge Current Sampling nestetors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1505 Appendix B: Package Outline Mechanical Drawing See page 1510 Appendix C: Part Marking Information - See page 1517 International Rectifier 874