MwT-3 26 GHz High Power GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns CHIP THICKNESS = 125 FEATURES 50 * 11 dB SMALL SIGNAL GAIN AT 12 GHz * +21.0 dBm OUTPUT POWER AT 12 GHz * 0.3 MICRON REFRACTORY METAL/GOLD GATE * 300 MICRON GATE WIDTH * CHOICE OF CHIP AND THREE PACKAGE TYPES 75 241 70 50 406 75 75 DESCRIPTION The MwT-3 is a GaAs MESFET device whose nominal quarter-micron gate length and 300 micron gate width make it ideally suited to applications requiring high-gain in the 500 MHz to 26 GHz frequency range with power outputs ranging from +18 to +21 dBm. The straight geometry of the MwT-3 makes it equally effective for either wideband (e.g. 6 to 18 GHz) or narrow-band applications. The chip is produced using MwT's reliable metal system and devices from each wafer are screened to insure reliability. All chips are passivated using MwT's patented "Diamond-Like Carbon" process for increased durability, Designers can use MwT's unique BIN selection feature to choose devices from narrow Idss ranges, insuring consistent circuit operation. DC SPECIFICATIONS AT Ta = 25C SYMBOL PARAM. & CONDITIONS IDSS Gm Vp BVGSO BVGDO Rth UNITS Saturated Drain Current Vds= 4.0 V VGS= 0.0 V Transconductance Vds= 4.0 V VGS= 0.0 V Pinch-off Voltage Vds= 3.0 V IDS= 2.0 mA Gate-to-Source Breakdown Volt. Igs= -0.2 mA Gate-to-Drain Breakdown Volt. Igd= -0.2 mA RF SPECIFICATIONS AT Ta = 25C MIN mA 30 mS 35 TYP -2.0 -6.0 V SYMBOL UNITS MIN TYP 120 P1dB Output Power at 1 dB Compression VDS= 6.0 V IDS= 0.6 x IDSS 12 GHz dBm 20.0 21.0 SSG Small Signal Gain VDS= 6.0 V IDS= 0.6 x IDSS 12 GHz dB 10.0 11.0 PAE Power Added Efficiency VDS= 6.0V IDS= 0.6 x IDSS 12 GHz % 30 35 IDSS Recommended IDSS Range for Optimum P1dB 55 V V MAX -5.0 -12.0 -8.0 MwT-3 Chip, 371 C/W MwT-370, 373 *Overall Rth depends on case mounting. PARAMETER Cgd Rd Cgs GATE Cpg Ri Ld DRAIN Rds gm tau mA 80110 150 320* DEVICE EQUIVALENT CIRCUIT MODEL Rg FREQ -12.0 Thermal Resistance Lg PARAMETERS AND CONDITIONS Cds Rs Ls SOURCE Cpd Source Resistance Source Inductance Drain-Source Resistance Drain-Source Capacitance Drain Resistance Drain Pad Capacitance Drain Inductance Gate Bond Wire Inductance Gate Pad Capacitance Gate Resistance Gate-Source Capacitance Channel Resistance Gate-Drain Capacitance Transconductance Transit Time VALUE Rs Ls Rds Cds Rd Cpd Ld Lg Cpg Rg Cgs Ri Cgd gm tau 1.48 0.034 253 0.074 3.11 0.012 0.227 0.136 0.034 0.314 0.348 5.78 0.022 51.0 3.7 nH pF pF nH nH pF pF pF mS psec ORDERING INFORMATION Chip Package 70 Package 71 Package 73 MwT-3 MwT-370 MwT-371 MwT-373 NOTE: For Package information, please see supplimentary application note from our website at www.mwtinc.com. When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required. 4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208 All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice. MwT-3 26 GHz High Power GaAs FET MwT-3 DUAL BIAS MwT-3 OPTIONAL BONDING Output Reference 50 Output Microstrip Plane 19 Mils Long 2 Mils Output Reference Plane 50 Output Microstrip 19 Mils Long 2 Mils Copper Heat Sink 5 Mils Below Level of Microstrip Copper Heat Sink 5 Mils Below Level of Microstrip MwT 20 Mils FP3 2 Mils 7 Mils Long 50 Input Microstrip Input Reference Plane MwT 2 Mils 7 Mils Long Gold Ridge 10x 10x 5 Mils (2 each) Gold Ridge 10x 10x 5 For Dual Bias, or All Bond Wires are 1.0 25pF Caps for Mil Diameter Single Bias (2 each) 50 Input Microstrip Input Reference Plane All Bond Wires are 1.0 Mil Diameter 20 Mils FP3 SAFE OPERATING LIMITS vs. BACKSIDE CHIP 200.0 Absolute Maximum Continuous Maximum 150 100 125 Ids (mA) 150.0 MAXIMUM RATINGS AT Ta = 25C SYMBOL 75C or Lower 100 125 75C or Lower VDS Tch Tst Pin 100.0 50.0 PARAMETER UNITS Drain to Source Voltage Channel Temperature Storage Temperature RF Input Power V C C mW CONT MAX1 ABSOLUTE MAX2 See Safe Operating Limits +150 +175 -65 to +150 +175 120 180 NOTES: 1. Exceeding any one of these limits in continuous operation may reduce the mean-time-to-failure below the design goals. 2. Exceeding any one of these limits may cause permanent damage. 0 0 2 4 6 8 Vds (V) BIN SELECTION BIN# 1 2 3 4 5 6 7 8 9 10 11 IDSS (mA) 3035 3540 4045 4550 5055 5560 6065 6570 7075 7580 8085 12 8590 13 14 15 16 17 18 9095 95100 100105 105110 110115 115120 BIN ACCURACY STATEMENT When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required. 4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208 All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.