MwT-3
26 GHz High Power
GaAs FET
MwT-3
26 GHz High Power
GaAs FET
••
••
• 11 dB SMALL SIGNAL GAIN AT 12 GHz
••
••
• +21.0 dBm OUTPUT POWER AT 12 GHz
••
••
• 0.3 MICRON REFRACTORY METAL/GOLD GATE
••
••
• 300 MICRON GATE WIDTH
••
••
• CHOICE OF CHIP AND THREE PACKAGE TYPES
SYMBOL P ARAMETERS AND CONDITIONS FREQ UNITS MIN TYP
P1dB
SSG
PAE
IDSS
Output Power at 1 dB Compression
VDS= 6.0 V IDS= 0.6 x IDSS
Small Signal Gain
VDS= 6.0 V IDS= 0.6 x IDSS
Power Added Efficiency
VDS= 6.0V IDS= 0.6 x IDSS
Recommended IDSS Range
for Optimum P1dB
12 GHz
12 GHz
12 GHz
dBm
dB
%
mA
10.0
21.0
11.0
35
80-
110
RF SPECIFICATIONS AT Ta = 25°°
°°
°C
DESCRIPTION
The MwT-3 is a GaAs MESFET device whose nominal quarter-micron gate length and 300 micron gate width make it ideally suited to
applications requiring high-gain in the 500 MHz to 26 GHz frequency range with power outputs ranging from +18 to +21 dBm. The
straight geometry of the MwT-3 makes it equally effective for either wideband (e.g. 6 to 18 GHz) or narrow-band applications. The chip is
produced using MwT’s reliable metal system and devices from each wafer are screened to insure reliability. All chips are passiv ated using
MwT’s patented “Diamond-Like Carbon” process for increased durability, Designers can use MwT’s unique BIN selection feature to
choose devices from narrow Idss ranges, insuring consistent circuit operation.
75
50
50
406
70
241
CHIP THICKNESS = 125
DC SPECIFICATIONS AT Ta = 25°°
°°
°C
SYMBOL P ARAM. & CONDITIONS UNITS MIN TYP MAX
IDSS
Gm
Vp
BVGSO
BVGDO
Saturated Drain Current
Vds= 4.0 V VGS= 0.0 V
Transconductance
Vds= 4.0 V VGS= 0.0 V
Pinch-off Voltage
Vds= 3.0 V IDS= 2.0 mA
Gate-to-Source Breakdown Volt.
Igs= -0.2 mA
Gate-to-Drain Breakdown Volt.
Igd= -0.2 mA
mA 30
-2.0
120
mS 35 55
-5.0
V
V
V
°C/W
-6.0
-8.0
-12.0
-12.0
150
320*
Lg Rg Rd Ld
Cgd
GATE DRAIN
Cgs
Cpg
Rds Cds Cpd
Ri
Rs
Ls
gm
tau
SOURCE
DEVICE EQUIVALENT CIRCUIT MODEL
Gate Bond Wire Inductance
Gate Pad Capacitance
Gate Resistance
Gate-Source Capacitance
Channel Resistance
Gate-Drain Capacitance
Transconductance
Transit T ime
Lg
Cpg
Rg
Cgs
Ri
Cgd
gm
tau
0.136 nH
0.034 pF
0.314 Ω
0.348 pF
5.78 Ω
0.022 pF
51.0 mS
3.7 psec
Source Resistance
Source Inductance
Drain-Source Resistance
Drain-Source Capacitance
Drain Resistance
Drain Pad Capacitance
Drain Inductance
VALUE
PARAMETER
Rs
Ls
Rds
Cds
Rd
Cpd
Ld
1.48 Ω
0.034 nH
253 Ω
0.074 pF
3.11 Ω
0.012 pF
0.227 nH
Rth Thermal
Resistance
30
4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-22084268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
DC SPECIFICATIONS AT Ta = 25°°
°°
°C RF SPECIFICATIONS AT Ta = 25°°
°°
°C
FEATURESFEATURES
NOTE:
For Package information, please see supplimentary application note from our website at
www.mwtinc.com. When placing order or inquiring, please specify BIN range, wafer no., if
known, and screening level required.
ORDERING INFORMATIONORDERING INFORMATION
Chip MwT-3
Package 70 MwT-370
Package 71 MwT-371
Package 73 MwT-373
All Dimensions in Microns
MwT-3 Chip, 371
MwT-370, 373
*Overall Rth depends on case mounting.
DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM
75
75
20.0
MwT-3
26 GHz High Power
GaAs FET
MwT-3
26 GHz High Power
GaAs FET
4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-22084268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
75°°
°°
°C or Lower
125
75°°
°°
°C or Lower
125
150
0 2 4 6 8
100.0
50.0
0
Vds (V)
Ids (mA)
Absolute Maximum Continuous Maximum
SAFE OPERATING LIMITS vs. BACKSIDE CHIP
MAXIMUM RATINGS AT Ta = 25°°
°°
°C
SYMBOL
VDS
Tch
Tst
Pin
P ARAMETER UNITS CONT MAX1ABSOLUTE MAX2
Drain to Source Voltage
Channel T emperature
Storage T emperature
RF Input Power
See Safe Operating Limits
°C
°C120
+175
+175
180
V
mW -65 to +150
+150
NOTES: 1. Exceeding any one of these limits in continuous operation may reduce the
mean-time-to-failure below the design goals.
2. Exceeding any one of these limits may cause permanent damage.
MwT-3
DUAL BIAS
50 Ω Output
Microstrip
50 Ω Input
Microstrip
Output Reference
Plane
Input Reference
Plane
7 Mils Long
19 Mils Long 2 Mils
MwT
2 Mils
All Bond
W ires are 1.0
Mil Diameter
20 Mils
Copper Heat Sink
5 Mils Below Level of
Microstrip
Gold Ridge
10x 10x 5 Mils
(2 each)
FP3
MwT-3
OPTIONAL BONDING
50 Ω Output
Microstrip
50 Ω Input
Microstrip
Output Reference
Plane
Input Reference
Plane
7 Mils Long
19 Mils Long 2 Mils
MwT
2 Mils
All Bond
W ires are 1.0
Mil Diameter
20 Mils
Copper Heat Sink
5 Mils Below Level of
Microstrip
Gold Ridge
10x 10x 5 For
Dual Bias, or
25pF Caps for
Single Bias
(2 each)
FP3
MAXIMUM RATINGS AT Ta = 25°°
°°
°C
IDSS
(mA)
BIN# 1 2 3
30-
35 35-
40 40-
45
45 6
45-
50 50-
55 55-
60
789
60-
65 65-
70 70-
75
10 11 12
75-
80 80-
85 85-
90
13 14 15
90-
95 95-
100 100-
105
16
105-
110
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required.
BIN SELECTION
BIN ACCURACY STATEMENT
150.0
200.0
100
100
17
110-
115
18
115-
120
