©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
MJD45H11
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse T est: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage - 80 V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (DC) - 8 A
ICP Collector Current (Pulse) - 16 A
PC Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (Ta=25°C) 1.75 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) *Collector-Emitter Sustaining Voltage IC = - 30mA, IB = 0 - 80 V
ICEO Collector Cut-off Current VCE = - 80V, IB = 0 - 10 µA
IEBO Em i tt e r C u t-o ff C u rr e n t VBE = - 5V, IC = 0 - 50 µA
hFE *DC Current Gain VCE = - 1V, IC = - 2A
VCE = - 1V, IC = - 4A 60
40
VCE(sat) *Collector-Emitter Saturation Voltage IC = - 8A, IB = - 0.4A - 1 V
VBE(on) *Base-Emitter Saturation Voltage IC = - 8A, IB = - 0.8A - 1.5 V
fT Current Gain Bandwidth Product VCE= - 10A, IC = - 0.5A 40 MHz
Cob Collector Capacitance VCB = - 10V, f = 1MHz 230 pF
tON Turn ON Time IC = - 5A
IB1= - IB2 = - 0.5A 135 ns
tSTG Storage Time 500 ns
tF Fall Time 100 ns
MJD45H11
General Purpos e Power and Switchi ng Such
as Output or Driver Stages in Applications
D-PAK for Surface Mount Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular MJE45H
• Fast Switching Speeds
• Low Collector Emitter Saturation Voltage
1.Base 2.Collector 3.Emitter
D-PAK I-PAK
11
©2001 Fairchild Semiconductor Corporation
MJD45H11
Rev. A2, June 2001
Typical Characteristics
Figure 1. DC current Gain Figure 2. Safe Operating Area
Figure 3. Power Derating
-0.01 -0.1 -1 -10
1
10
100
1000 VCE = -1V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-1 -10 -100 -1000
-0.01
-0.1
-1
-10
-100
5ms
100µs
500µs
1ms
DC
ICP(max)
IC(max)
IC[A], COLLECTOR CURRENT
VCE[V], COL LECTOR- EMI TTE R VOLTAGE
0 25 50 75 100 125 150 175
0
5
10
15
20
25
PC[W], POWER DIS SIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
MJD45H11
Dimensions in Millimeters
6.60 ±0.20
2.30 ±0.10
0.50 ±0.10
5.34 ±0.30
0.70 ±0.20
0.60 ±0.20
0.80 ±0.20
9.50 ±0.30
6.10 ±0.20
2.70 ±0.20 9.50 ±0.30
6.10 ±0.20
2.70 ±0.20
MIN0.55
0.76 ±0.10 0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
6.60 ±0.20
0.76 ±0.10
(5.34)
(1.50)
(2XR0.25)
(5.04)
0.89 ±0.10
(0.10) (3.05)
(1.00)
(0.90)
(0.70)
0.91 ±0.10
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
MAX0.96
(4.34)(0.50) (0.50)
D-PAK
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR T HE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
©2001 Fairchild Semiconductor Corporation Rev. H3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor .
The datasheet is printed for reference information only.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET®
VCX™
STAR*POWE R is used under license
