DG441LE, DG442LE
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16 , Low Charge Injection and Leakage,
+12 V / +5 V / +3 V / ± 5 V Quad SPST Switches
DESCRIPTION
The DG441LE, DG442LE monolithic quad
single-pole-single-throw analog switches are designed to
provide high speed, low error switching of analog signals.
The DG441LE has a normally closed function. The DG442LE
has a normally open function.
The DG441LE, DG442LE feature low charge injection of a
few picocoulombs over the full analog switch range.
Combining low on resistance (16 , typ.), low parasitic
capacitance (CD(ON) 15 pF), and fast switching speed
(tON, 18 ns, typ.), the devices are ideal for data acquisition,
sample-and-hold, and ADC input circuit designs.
The DG441LE, DG442LE operate on single and dual
supplies. Single supply voltage ranges from 3 V to 16 V while
dual supply operation is recommended with ± 3 V to ± 8 V.
Each switch conducts equally well in both direction when
on, and blocks input voltages up to the supply levels when
off.
The DG441LE, DG442LE are available in 16 lead TSSOP,
SOIC, and PDIP packages.
FEATURES
• 3 V to 16 V single supply or ± 3 V to ± 8 V dual
supply
• On-resistance RDS(on): 16
• Fast switching tON: 18 ns,typ.
• Low parasitic capacitance:
CD(ON): 15 pF
CS(OFF): 5 pF
• Less than 8 pC charge injection over the full
signal swing range
• Low leakage: < 10 pA, typ.
• TTL, CMOS compatible
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
BENEFITS
• Wide operation voltage range
• Low signal errors and distortion
•Fast switching time
• Minimized switching glitch
APPLICATIONS
• Automatic test equipment
• Process control and automation
• Data acquisition systems
• Meters and instruments
• Medical and healthcare systems
• Communication systems
• Audio and video signal routing
• Relay replacement
• Battery powered systems
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Logic “0” 0.8 V
Logic “1” 2.4 V
Available
Available
Available
DG441LE / 442LE
Dual-In-Line, TSSOP and SOIC
IN1IN2
D1D2
S1S2
V- V+
GND NC
S4S3
D4D3
IN4IN3
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
Top View
9
TRUTH TABLE
LOGIC DG441LE DG442LE
0OnOff
1OffOn
DG441LE, DG442LE
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Notes
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 7 mW/°C above 75 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
OODERING INFORMATION
TEMP. RANGE CONFIGURATION PACKAGE PART NUMBER MIN. ORDER / PACK. QUANTITY
-40 °C to +85 °C
Lead (Pb)-free
DG441LE
16-pin TSSOP DG441LEDQ-GE3 Tube 360 units
DG441LEDQ-T1-GE3 Tape and reel, 3000 units
16-pin SOIC DG441LEDY-GE3 Tube 500 units
DG441LEDY-T1-GE3 Tape and reel, 2500 units
16-pin PDIP DG441LEDJ-GE3 Tube 500 units
DG442LE
16-pin TSSOP DG442LEDQ-GE3 Tube 360 units
DG442LEDQ-T1-GE3 Tape and reel, 3000 units
16-pin SOIC DG442LEDY-GE3 Tube 500 units
DG442LEDY-T1-GE3 Tape and reel, 2500 units
16-pin PDIP DG442LEDJ-GE3 Tube 500 units
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
V+ to V- -0.3 to +18
V
GND to V-A18
Digital Inputs a VS, VDGND -0.3 to (V +) + 0.3
or 30 mA, whichever occurs first
Continuous Current (any terminal) 30 mA
Current, S or D (pulsed 1 ms, 10 % duty cycle) 100
Storage Temperature (DQ, DY suffix) -65 to +125 °C
(AK suffix) -65 to +150
Power Dissipation (packages) b
16-pin TSSOP c450
mW16-pin narrow body SOIC d650
16-pin CerDIP e900
ESD Human Body Model (HBM); per ANSI / ESDA / JEDEC® JS-001 2500 V
Latch Up Current, per JESD78D 400 mA
DG441LE, DG442LE
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SPECIFICATIONS a (single supply 12 V)
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE
SPECIFIED
V+ = 12 V, V- = 0 V
VIN = 2.4 V, 0.8 V f
TEMP.
b TYP. c
A SUFFIX
LIMITS
-55 °C to +125 °C
D SUFFIX
LIMITS
-40 °C to +85 °C UNIT
MIN. dMAX. dMIN. dMAX. d
Analog Switch
Analog Signal Range eVANALOG Full - 0 12 0 12 V
Drain-Source
On-Resistance RDS(on) V+ = 10.8 V, V- = 0 V
IS = 10 mA, VD = 2 V / 9 V
Room 16 - 26 - 26
Full - - 40 - 35
On-Resistance Match
Between Channels eRDS(on) IS = 10 mA, VD = 9 V Room 0.1 - 0.5 - 0.5
Switch Off Leakage Current
IS(off) VD = 1 V / 11 V,
VS = 11 V / 1 V
Room - -1 1 -1 1
nA
Full - -15 15 -10 10
ID(off)
Room - -1 1 -1 1
Full - -15 15 -10 10
Channel On Leakage Current ID(on) VS = VD = 11 V / 1 V Room - -1 1 -1 1
Full - -15 15 -10 10
Digital Control
Input Current, VIN Low IIL VIN under test = 0.8 V Full 0.01 -1.5 1.5 -1 1 μA
Input Current, VIN High IIH VIN under test = 2.4 V Full - -1.5 1.5 -1 1
Dynamic Characteristics
Turn-On Time tON RL = 300 , CL = 35 pF
VS = 5 V, see figure 2
Room 18 - 60 - 60
ns
Full - - 80 - 70
Turn-Off Time tOFF
Room 18 - 35 - 35
Full - - 50 - 45
Charge Injection eQV
g = 0 V, Rg = 0 , CL = 10 nF Room 6.6 - - - - pC
Off Isolation eOIRR RL = 50 , CL = 5 pF,
f = 1 MHz
Room 68.4 - - - - dB
Channel-to-Channel Crosstalk eXTALK Room 114 - - - -
Source Off Capacitance eCS(off)
f = 1 MHz
Room 5 - - - -
pFDrain Off Capacitance eCD(off) Room 6 - - - -
Channel On Capacitance eCD(on) Room 15 - - - -
Power Supplies
Positive Supply Current I +
VIN = 0 V or 12 V
Full 0.03 - 1.5 - 1
μANegative Supply Current I - Room - -1 - -1 -
Full 0.002 -7.5 - -5 -
Ground Current IGND Full 0.002 -1.5 - -1 -
DG441LE, DG442LE
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SPECIFICATIONS a (dual supply ± 5 V)
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE
SPECIFIED
V+ = 5 V, V- = -5 V
VIN = 2.4 V, 0.8 V f
TEMP. b TYP. c
A SUFFIX
LIMITS
-55 °C to +125 °C
D SUFFIX
LIMITS
-40 °C to +85 °C UNIT
MIN. dMAX. dMIN. dMAX. d
Analog Switch
Analog Signal Range eVANALOG Full - -5 5 -5 5 V
Drain-Source
On-Resistance RDS(on) V+ = 5 V, V- = -5 V
IS = 10 mA, VD = ± 3.5 V
Room 18 - 30 - 30
Full - - 42 - 37
On-Resistance Match
Between Channels eRDS(on) IS = 10 mA, VD = ± 3.5 V Room 0.1 - 0.5 - 0.5
Switch Off
Leakage Current g
IS(off) V+ = 5.5, V- = -5.5 V
VD = ± 4.5 V, VS = ± 4.5 V
Room - -1 1 -1 1
nA
Full - -15 15 -10 10
ID(off)
Room - -1 1 -1 1
Full - -15 15 -10 10
Channel On
Leakage Current gID(on) V+ = 5.5 V, V- = -5.5 V
VS = VD = ± 4.5 V
Room - -1 1 -1 1
Full - -15 15 -10 10
Digital Control
Input Current, VIN Low eIIL VIN under test = 0.8 V Full 0.05 -1.5 1.5 -1 1 μA
Input Current, VIN High eIIH VIN under test = 2.4 V Full 0.05 -1.5 1.5 -1 1
Dynamic Characteristics
Turn-On Time tON RL = 300 , CL = 35 pF
VS = ± 3.5 V, see figure 2
Room 42 - 65 - 65
ns
Full - - 90 - 75
Turn-Off Time tOFF
Room 34 - 45 - 45
Full - - 65 - 55
Charge Injection eQV
g = 0 V, Rg = 0 , CL = 10 nF Room 5.8 - - - - pC
Off Isolation eOIRR
RL = 50 , CL = 5 pF, f = 1 MHz
Room 68.4 - - - -
dB
Channel-to-Channel
Crosstalk eXTALK Room 113 - - - -
Source Off Capacitance eCS(off)
f = 1 MHz
Room 5 - - - -
pFDrain Off Capacitance eCD(off) Room 6 - - - -
Channel On Capacitance eCD(on) Room 14 - - - -
Power Supplies
Positive Supply Current eI +
VIN = 0 V or 5 V
Full 0.002 - 1.5 - 1
μANegative Supply Current eI - Room -0.002 -1 - -1 -
Full - -7.5 - -5 -
Ground Current eIGND Full -0.002 -1.5 - -1 -
DG441LE, DG442LE
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SPECIFICATIONS a (single supply ± 5 V)
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE
SPECIFIED
V+ = 5 V, V- = 0 V
VIN = 2.4 V, 0.8 V f
TEMP. b TYP. c
A SUFFIX
LIMITS
-55 °C to +125 °C
D SUFFIX
LIMITS
-40 °C to +85 °C UNIT
MIN. dMAX. dMIN. dMAX. d
Analog Switch
Analog Signal Range eVANALOG Full - - 5 - 5 V
Drain-Source
On-Resistance eRDS(on) V + = 4.5 V
IS = 5 mA, VD = 1 V, 3.5 V
Room 36 - 50 - 50
Full - - 88 - 75
On-Resistance Match
Between Channels eRDS(on) IS = 10 mA, VD = 3.5 V Room 0.5 - 1 - 1
Dynamic Characteristics
Turn-On Time etON RL = 300 , CL = 35 pF
VS = 3.5 V, see figure 2
Room 53 - 70 - 70
ns
Hot - - 90 - 80
Turn-Off Time etOFF
Room 34 - 50 - 50
Hot - - 70 - 60
Charge Injection eQV
g = 0 V, Rg = 0 , CL = 10 nF Room 3.3 - - - - pC
Power Supplies
Positive Supply Current eI +
VIN = 0 V or 5 V
Full 10 - 200 - 100
μANegative Supply Current e I - Room -0.002 -1 - -1 -
Full - -7.5 - -5 -
Ground Current eIGND Full -10 -200 - -100 -
DG441LE, DG442LE
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Notes
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
SPECIFICATIONS a (single supply 3 V)
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE
SPECIFIED
V+ = 3 V, V- = 0 V
VIN = 0.4 V f
TEMP.
b TYP.
c
A SUFFIX
LIMITS
-55 °C to +125 °C
D SUFFIX
LIMITS
-40 °C to +85 °C UNIT
MIN. dMAX. dMIN. dMAX. d
Analog Switch
Analog Signal Range eVANALOG Full - 0 3 0 3 V
Drain-Source
On-Resistance RDS(on) V+ = 2.7 V, V- = 0 V
IS = 5 mA, VD = 0.5 V, 2.2 V
Room 106 - 130 - 130
Full - - 150 - 140
On-Resistance Match
Between Channels eRDS(on) IS = 5 mA, VD = 2.2 V Room 1 - 3 - 3
Switch Off
Leakage Current g
IS(off) V+ = 3.3, V- = 0 V
VD = 1 V, 2 V, VS = 2 V, 1 V
Room - -1 1 -1 1
nA
Full - -15 15 -10 10
ID(off)
Room - -1 1 -1 1
Full - -15 15 -10 10
Channel On
Leakage Current gID(on) V+ = 3.3 V, V- = 0 V
VS = VD = 1 V, 2 V
Room - -1 1 -1 1
Full - -15 15 -10 10
Digital Control
Input Current, VIN Low eIIL VIN under test = 0.4 V Full 0.005 -1.5 1.5 -1 1 μA
Input Current, VIN High eIIH VIN under test = 2.4 V Full 0.005 -1.5 1.5 -1 1
Dynamic Characteristics
Turn-On Time tON RL = 300 , CL = 35 pF
VS = 1.5 V, see figure 2
Room 141 - 200 - 200
ns
Full - - 220 - 210
Turn-Off Time tOFF
Room 84 - 120 - 120
Full - - 140 - 130
Charge Injection eQV
g = 0 V, Rg = 0 , CL = 10 nF Room 2 - - - - pC
Off Isolation eOIRR
RL = 50 , CL = 5 pF, f = 1 MHz
Room 68 - - - -
dB
Channel-to-Channel
Crosstalk eXTALK Room 107 - - - -
Source Off Capacitance eCS(off)
f = 1 MHz
Room 6 - - - -
pFDrain Off Capacitance eCD(off) Room 7 - - - -
Channel On Capacitance eCD(on) Room 15 - - - -
DG441LE, DG442LE
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
RDS(on) vs. Analog Voltage and Temperature
RDS(on) vs. Analog Voltage
RDS(on) vs. Drain Voltage and Temperature
RDS(on) vs. Analog Voltage
Leakage Current vs. Drain Voltage
(Dual Supply)
0
5
10
15
20
25
30
0123456789101112
R
ON
- On-Resistance ()
V
D
- Analog Voltage (V)
+125
°
C
+85 °C
+25
°
C-40
°
C
V+ = +12 V
I
S
= 10 mA
-55 °C
0
10
20
30
40
50
60
70
80
90
0246810121416
RON - On-Resistance ()
VD- Analog Voltage (V)
V+ = +3 V
V+ = +12 V
V+ = +5 V
V+ = +16 V
TA= 25 °C
IS= 10 mA
0
5
10
15
20
25
30
35
-5 -4 -3 -2 -1 0 1 2 3 4 5
R
ON
- On-Resistance ()
V
D
- Analog Voltage (V)
+125 °C
+85 °C
+25 °C-40 °C
V± = ± 5 V
I
S
= 10 mA
-55 °C
6
8
10
12
14
16
18
20
22
24
-8-6-4-202468
RON -On-Resistance (Ω)
VD- Analog Voltage (V)
TA= 25 °C
IS= 10 mA
V± = ± 8 V
V± = ± 5 V
-40
-30
-20
-10
0
10
20
30
40
-5-4-3-2-1012345
Leakage Current (pA)
VD- Drain Voltage (V), VS= -VD
V+ = +5 V
ID(ON)
ID(OFF)
IS(OFF)
DG441LE, DG442LE
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Switching Time vs. Single Supply
Capacitance vs. Analog Voltage
(Single Supply)
Switching Time vs. Dual Supply
Capacitance vs. Analog Voltage
(Dual Supply)
RDS(on) vs. Analog Voltage and Temperature
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
2 4 6 8 10121416
Switching Speed (ns)
V+ - Positive Supply Voltage (V)
Single Supply
t
ON
t
OFF
0
2
4
6
8
10
12
14
16
18
20
0123456789101112
Capacitance (pF)
Analog Voltage (V)
C
D
(
ON
)
, V+ = +12 V
Single Supply
C
D(ON)
, V+ = +5 V
C
D(ON)
, V+ = +3 V
C
S(OFF)
, V+ = +12 V
C
S(OFF)
, V+ = +5 V
C
D(OFF)
, V+ = +12 V
C
D(OFF)
, V+ = +3 V
C
S(OFF)
, V+ = +3 V
C
D(OFF)
, V+ = +5 V
0
10
20
30
40
50
60
70
80
90
100
110
120
345678
Switching Speed (ns)
V+/- - Positive Supply Voltage (V)
Dual Supply
t
ON
t
OFF
0
2
4
6
8
10
12
14
16
18
20
-5 -4 -3 -2 -1 0 1 2 3 4 5
Capacitance (pF)
Analog Voltage (V)
Dual Supply
CD(ON), V± = ± 5 V
CD(OFF), V± = ± 5 V
CS(OFF), V± = ± 5 V
10
15
20
25
30
35
40
45
50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
RON -On-Resistance (Ω)
VD- Analog Voltage (V)
+125 °C
+85
°
C
+25 °C-40
°
C
V+ = +5 V
IS= 10 mA -55 °C
DG441LE, DG442LE
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Input Threshold vs. Single Supply Voltage
Charge Injection vs. Analog Voltage
Insertion Loss, Off Isolation and Crosstalk vs. Frequency
(Single Supply)
Supply Current vs. Temperature
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
246810121416
V
TH
- Threshold (V)
V+ - Positive Supply Voltage (V)
V
IH
V
IL
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
-5-4-3-2-10123456789101112
Q
INJ
- Charge Injection (pC)
V
D
- Analog Voltage (V)
V± = ± 5 V
V+ = 12 V
V+ = 5 V
V+ = 3 V
-120
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10
100K 1M 10M 100M 1G
Loss, OIRR, X
TALK
(dB)
Frequency (Hz)
Insertion Loss, -3dB = 301 MHz
V+ = +3 V
V- = 0 V
OIRR
X
TALK
DG441LE, DG442LE
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SCHEMATIC DIAGRAM (typical channel)
Fig. 1
TEST CIRCUITS
Fig. 2 - Switching Time
Fig. 3 - Charge Injection
Level
Shift/
Drive
VIN
S
V+
GND
V-
D
0 V
Logic
Input
Switch
Input
Switch
Output
3 V
50 %
0 V
VO
VS
tr < 20 ns
tf < 20 ns
tOFF
tON
Note: Logic input waveform is inverted for DG442.
50 %
80 % 80 %
VS
CL (includes fixture and stray capacitance)
V-
V+
IN
SD
3 V
RL
1 kΩ
CL
35 pF
VO
V-
GND
V+
OFFONOFF
OFFONOFF
VO
ΔV
O
INX
INX
Q = ΔVO x CL
(DG441)
(DG442)
CL
1 nF
IN
DVO
V-
V+
S
3 V
Rg
V-
GND
V+
DG441LE, DG442LE
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TEST CIRCUITS
Fig. 4 - Crosstalk
Fig. 5 - Off Isolation
Fig. 6 - Source / Drain Capacitances
C = 1 µF tantalum in parallel with 0.01 µF ceramic
50 Ω
D1
VO
Rg = 50 Ω
S1
V+
V-
D2
GND
V+
V-
NC
C
C
S2
RL
IN1
XTA L K Isolation = 20 log VS
VO
0 V, 2.4 V
0 V, 2.4 V
VS
IN2
C = RF bypass
S
IN RL
D
Rg = 50 Ω
VS
VO
0 V, 2.4 V
Off Isolation = 20 log VS
VO
V+
V-
GND V- C
C
V+
S
D
IN
V+
V-
GND
V+
V- C
C
0 V, 2.4 V
Meter
HP4192A
Impedance
Analyzer
or Equivalent
DG441LE, DG442LE
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S16-0392-Rev. A, 07-Mar-16 12 Document Number: 76754
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APPLICATIONS
Fig. 7 - Power MOSFET Driver Fig. 8 - Open Loop Sample-and-Hold
Fig. 9 - Precision-Weighted Resistor Programmable-Gain Amplifier
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reliability data, see www.vishay.com/ppg?76754.
+ 12 V
+ 12 V
GND V-
V+
0 = Load Off
1 = Load On
+ 24 V
I = 3A
VN0300L, M
DG442L
+ 12 V
10 kΩ
150 Ω
RL
IN
H = Sample
L = Hold
0 V
+ 12 V
VIN
V
OUT
C
H
SD
IN
1/4 DG442L
+
-
+
-
+ 12 V
V
V+
V- GND
DG441L or DG442L
+
-
VIN VOUT
Gain error is determined only by the resistor
tolerance. Op amp offset and CMRR will limit ac-
curacy of circuit.
GAIN1
AV = 1
GAIN2
AV = 10
GAIN3
AV = 20
GAIN4
AV = 100
R1
90 kΩ
R2
5 kΩ
R3
4 kΩ
R4
1 kΩ
VOUT
VIN
=R1 + R2 + R3 + R4
R4
= 100
With SW4 Closed
All Leads
0.101 mm
0.004 IN
E
HC
D
e B A1 LĬ
4312 8756
131416 15 91012 11
Package Information
Vishay Siliconix
Document Number: 71194
02-Jul-01 www.vishay.com
1
SOIC (NARROW): 16ĆLEAD
JEDEC Part Number: MS-012
MILLIMETERS INCHES
Dim Min Max Min Max
A1.35 1.75 0.053 0.069
A10.10 0.20 0.004 0.008
B0.38 0.51 0.015 0.020
C0.18 0.23 0.007 0.009
D9.80 10.00 0.385 0.393
E3.80 4.00 0.149 0.157
e1.27 BS C 0.050 BSC
H5.80 6.20 0.228 0.244
L0.50 0.93 0.020 0.037
Ĭ0_8_0_8_
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300
E1E
Q1
A
L
A1
e1B
B1
S
CeA
D
15°
MAX
12345678
16 15 14 13 12 11 10 9
Package Information
Vishay Siliconix
Document Number: 71261
06-Jul-01 www.vishay.com
1
PDIP: 16ĆLEAD
MILLIMETERS INCHES
Dim Min Max Min Max
A3.81 5.08 0.150 0.200
A10.38 1.27 0.015 0.050
B0.38 0.51 0.015 0.020
B10.89 1.65 0.035 0.065
C0.20 0.30 0.008 0.012
D18.93 21.33 0.745 0.840
E7.62 8.26 0.300 0.325
E15.59 7.11 0.220 0.280
e12.29 2.79 0.090 0.110
eA7.37 7.87 0.290 0.310
L2.79 3.81 0.110 0.150
Q11.27 2.03 0.050 0.080
S0.38 1.52 .015 0.060
ECN: S-03946—Rev. D, 09-Jul-01
DWG: 5482
Vishay Siliconix
Package Information
Document Number: 74417
23-Oct-06
www.vishay.com
1
Symbols
DIMENSIONS IN MILLIMETERS
Min Nom Max
A - 1.10 1.20
A1 0.05 0.10 0.15
A2 - 1.00 1.05
B 0.22 0.28 0.38
C - 0.127 -
D 4.90 5.00 5.10
E 6.10 6.40 6.70
E1 4.30 4.40 4.50
e-0.65-
L 0.50 0.60 0.70
L1 0.90 1.00 1.10
y--0.10
θ10°3°6°
ECN: S-61920-Rev. D, 23-Oct-06
DWG: 5624
TSSOP: 16-LEAD
PAD Pattern
www.vishay.com Vishay Siliconix
Revision: 02-Sep-11 1Document Number: 63550
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RECOMMENDED MINIMUM PAD FOR TSSOP-16
0.281
(7.15)
Recommended Minimum Pads
Dimensions in inches (mm)
0.171
(4.35)
0.055
(1.40)
0.012
(0.30)
0.026
(0.65)
0.014
(0.35)
0.193
(4.90)
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 72608
24 Revision: 21-Jan-08
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SO-16
RECOMMENDED MINIMUM PADS FOR SO-16
0.246
(6.248)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.152
(3.861)
0.047
(1.194)
0.028
(0.711)
0.050
(1.270)
0.022
(0.559)
0.372
(9.449)
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Revision: 08-Feb-17 1Document Number: 91000
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