2SD2115(L)/(S)
Silicon NPN Epitaxial Planar
Application
Low frequency power amplifier
Outline
4
123
4
3
2
11. Base
2. Collector
3. Emitter
4. Collector
DPAK
S Type
L Type
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to base voltage VCBO 150 V
Collector to emitter voltage VCEO 60 V
Emitter to base voltage VEBO 5V
Collector current IC2A
Collector peak current IC(peak) 2.5 A
Collector power dissipation PC*118 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
2SD2115(L)/(S)
2
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage V(BR)CBO 150 — — V IC = 1 mA, IE = 0
Collector to emitter breakdown
voltage V(BR)CEO 60 — — V IC = 10 mA, RBE = ∞
Emitter to base breakdown
voltage V(BR)EBO 5——VI
E
= 1 mA, IC = 0
Collector cutoff current ICBO ——10µAV
CB = 100 V, IE = 0
DC current transfer ratio hFE 150 — — VCE = 5 V, IC = 1.5 A*1
Collector to emitter saturation
voltage VCE(sat) — — 0.8 V IC = 1.5 A, IB = 0.05 A*1
Base to emitter saturation
voltage VBE(sat) — — 1.3 V IC = 1.5 A, IB = 0.05 A*1
Fall time tf— — 0.6 µs IC = 1.5 A, IB1 = –IB2 = 50 mA
Note: 1. Pulse test.
Maximum Collector Dissipation Curve
30
20
10
0 50 100 150
Case temperature TC (°C)
Collector power dissipation PC (W)
3.0
0.3
1.0
Collector current IC (A)
0.1
0.031103 30 100
Collector to emitter voltage VCE (V)
Ta = 25°C,
1 shot pulse
iC(peak)
IC(max)
PW = 10 ms
1 ms
Area of Safe Operation
DC Operation(T
C
= 25°C)
2SD2115(L)/(S)
3
TC = 25°C
IB = 0
1.0
0.8
0.6
0.4
0.2
0
Collector current IC (A)
2
Collector to emitter voltage VCE (V)
64108
Typical Output Characteristics
0.5 mA
1
1.5
2
2.5
3.5
4.5
4
3
5
1,000
300
30
100
10
0.03 0.1
DC current transfer ratio hFE
0.3
Collector current IC (A)
1.0 3.0
VCE = 5 V
Ta = 25°C
DC Current Transfer Ratio
vs. Collector Current
2SD2115(L)/(S)
4
Collector to Emitter Saturation Voltage
vs. Base Current
10
3.0
1.0
Collector to emitter saturation voltage VCE(sat) (V)
0.3
0.12 10 30 100 200
Base current IB (mA)
Ta = 25°C
IC = 2 A
1.5 A
1 A
Saturation Voltage
vs. Collector Current
10
3
1.0
Collector to emitter saturation voltage VCE(sat) (V)
Base to emitter saturation voltage VBE(sat) (V)
0.3
0.1
0.03
0.01
0.03 0.1 1.0
Collector current IC (A)
0.3 3.0
VBE(sat)
VCE(sat)
IC = 20 IB
Ta = 25°C
2SD2115(L)/(S)
5
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examples described herein.
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or Hitachi, Ltd.
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