IRF630 - Intersil Corporation

4-202

File Number

1578.2

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

IRF630, RF1S630SM

9A, 200V, 0.400 Ohm, N-Channel Power

MOSFETs

These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

speciﬁed level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

convertors, motor drivers, relay drivers, and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. These types can be operated directly

from integrated circuits.

Formerly developmental type TA17412.

Features

• 9A, 200V

•r

DS(ON) = 0.400Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEC TO-220AB JEDEC TO-263AB

Ordering Information

PART NUMBER PACKAGE BRAND

IRF630 TO-220AB IRF630

RF1S630SM TO-263AB RF1S630

NOTE: When ordering, use the entire part number. Add the suffix 9A to

obtain the T O-263AB v ariant in the tape and reel, i.e., RF1S630SM9A.

GATE

DRAIN (FLANGE)

SOURCE

DRAIN

(FLANGE)

GATE

SOURCE

Data Sheet June 1999

4-203

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

IRF630, RF1S630SM UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 200 V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 200 V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID9

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 36 A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD75 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS 150 mJ

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ= 25oC to 125oC.

Electrical Speciﬁcations TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 10) 200 - - V

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA2-4V

Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - - 250 µA

On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V 9 - - A

Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA

Drain to Source On Resistance (Note 2) rDS(ON) ID = 5A, VGS = 10V (Figure 8, 9) - 0.25 0.4 Ω

Forward Transconductance (Note 2) gfs VDS > ID(ON) x rDS(ON)MAX, ID = 5A (Figure 12) 3 4.8 - S

Turn-On Delay Time td(ON) VDD = 90V, ID≈ 9A, RGS = 9.1Ω, VGS = 10V

RL = 9.6Ω

MOSFET Switching Times are Essentially

Independent of Operating Temperature

- - 30 ns

Rise Time tr- - 50 ns

Turn-Off Delay Time td(OFF) - - 50 ns

Fall Time tf- - 40 ns

Total Gate Charge

(Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 9A, VDS = 0.8 x Rated BVDSS

Ig(REF) = 1.5mA (Figure 14)

Gate Charge is Essentially Independent of

Operating Temperature

-1930nC

Gate to Source Charge Qgs -10-nC

Gate to Drain “Miller” Charge Qgd -9-nC

Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) - 600 - pF

Output Capacitance COSS - 250 - pF

Reverse Transfer Capacitance CRSS -80-pF

Internal Drain Inductance LDMeasured From the

Contact Screw on Tab to

Center of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

- 3.5 - nH

Measured From the Drain

Lead, 6mm (0.25in) From

Package to Center of Die

- 4.5 - nH

Internal Source Inductance LSMeasured From the

Source Lead, 6mm

(0.25in) From Header to

Source Bonding Pad

- 7.5 - nH

Thermal Resistance Junction to Case RθJC - - 1.67 oC/W

Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 80 oC/W

IRF630, RF1S630SM

4-204

Source to Drain Diode Speciﬁcations

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current ISD Modified MOSFET

Symbol Showing the

Integral Reverse

P-N Junction Diode

--9A

Pulse Source to Drain Current

(Note 3) ISDM - - 36 A

Source to Drain Diode Voltage (Note 2) VSD TJ = 25oC, ISD = 9A, VGS = 0V (Figure 13) - - 2 V

Reverse Recovery Time trr TJ = 150oC, ISD = 9A, dISD/dt = 100A/µs - 450 - ns

Reverse Recovery Charge QRR TJ = 150oC, ISD = 9A, dISD/dt = 100A/µs-3-µC

NOTES:

2. Pulse Test: Pulse width ≤300µs, Duty Cycle ≤2%.

3. Repetitive rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 20V, starting TJ= 25oC, L = 3.37mH, RG= 50Ω, peak IAS = 9A.

Typical Performance Curves

Unless Otherwise Speciﬁed

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE

0 50 100 150

TC, CASE TEMPERATURE (oC)

POWER DISSIPATION MULTIPLIER

0.2

0.4

0.6

0.8

1.0

1.2

025 50 75 100 125 150

ID, DRAIN CURRENT (A)

TC, CASE TEMPERATURE (oC)

t1, RECTANGULAR PULSE DURATION (s)

ZθJC, NORMALIZED TRANSIENT

THERMAL IMPEDANCE

10-3 10-2 10-1 1

10-5 10-4

1.0

0.01

0.1

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC RθJC + TC

PDM

0.1

0.02

0.2

0.5

0.01

0.05

SINGLE PULSE

IRF630, RF1S630SM

4-205

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

Typical Performance Curves

Unless Otherwise Speciﬁed (Continued)

VDS, DRAIN TO SOURCE VOLTAGE (V)

0.1

ID, DRAIN CURRENT (A)

100

100µs

10µs

1ms

10ms

100ms

1000

LIMITED BY rDS(ON)

AREA MAY BE

OPERATION IN THIS

TJ = MAX RATED

TC = 25oC

VDS, DRAIN TO SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

0020406080

100

VGS = 10V

VGS = 8V

VGS = 7V

VGS = 6V

VGS = 5V

VGS = 4V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

0123 5

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 4V

VGS = 5V

VGS = 6V

VGS = 10V

VGS = 7V

VGS = 8V

VGS = 9V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

025671

ID, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

25oC

125oC

-55oC

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VDS > ID(ON) x rDS(ON)MAX

0.4

0.6

0.8

10 20 30 40

rDS(ON), DRAIN TO SOURCE

ID, DRAIN CURRENT (A)

0.2

VGS = 10V

VGS = 20V

2µs PULSE TEST

ON RESISTANCE

NORMALIZED DRAIN TO SOURCE

2.2

1.4

0.6

0.2 -40 0 40

TJ, JUNCTION TEMPERATURE (oC)

120

1.8

ON RESISTANCE

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VGS = 10V, ID = 5A

IRF630, RF1S630SM

4-206

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Typical Performance Curves

Unless Otherwise Speciﬁed (Continued)

1.25

1.05

0.95

0.85

0.75

-40 0 40

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE

BREAKDOWN VOLTAGE

120 160

1.15

ID = 250µA

2000

400

010 20

C, CAPACITANCE (pF)

1200

VDS, DRAIN TO SOURCE VOLTAGE (V)

1600

800 CISS

COSS

CRSS

CRSS = CGD

COSS = CDS + CGD

30 40 501

VGS = 0V, f = 1MHz

CISS = CGS + CGD, CDS

ID, DRAIN CURRENT (A)

gfs, TRANSCONDUCTANCE (S)

002468

125oC

25oC

55oC

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

02341

100

ISD, SOURCE TO DRAIN CURRENT (A)

VSD, SOURCE TO DRAIN VOLTAGE (V)

150oC

25oC

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

Qg, GATE CHARGE (nC)

VGS, GATE TO SOURCE VOLTAGE (V)

00 8 16 24 32

15 20

ID = 9A

VDS = 40V

VDS = 160V

VDS = 100V

IRF630, IRF632

IRF630, RF1S630SM

4-207

Test Circuits and Waveforms

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

VGS

0.01Ω

IAS

VDS

VDD

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

VDD

VDS

BVDSS

IAS

tAV

VGS

DUT

-VDD

tON

td(ON)

90%

10%

VDS 90%

10%

td(OFF)

tOFF

90%

50%

10% PULSE WIDTH

VGS

0.3µF

12V

BATTERY 50kΩ

VDS

DUT

Ig(REF)

(ISOLATED

VDS

0.2µF

CURRENT

REGULATOR

ID CURRENT

SAMPLING

IG CURRENT

SAMPLING

SUPPLY)

RESISTOR RESISTOR

SAME TYPE

AS DUT Qg(TOT)

Qgd

Qgs

VDS

VGS

VDD

IG(REF)

IRF630, RF1S630SM

4-208

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is gr anted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

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FAX: (886) 2 2715 3029

IRF630, RF1S630SM