2SK2329(L), 2SK2329(S) Silicon N Channel MOS FET REJ03G1008-0200 (Previous: ADE-208-1356) Rev.2.00 Sep 07, 2005 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2)) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S)) 4 4 D 1. Gate 2. Drain 3. Source 4. Drain G 1 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 7 2 3 S 2SK2329(L), 2SK2329(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Ratings 30 10 10 40 10 20 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min 30 10 Typ -- -- Max -- -- Unit V V Test Conditions ID = 10 mA, VGS = 0 IG = 200 A, VDS = 0 Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage IGSS IDSS VGS(off) Static drain to source on state resistance RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF -- -- 0.4 -- -- 10 -- -- -- -- -- -- -- -- -- -- -- -- 0.03 0.04 18 1250 540 120 20 145 225 125 0.9 100 10 100 1.4 0.04 0.06 -- -- -- -- -- -- -- -- -- -- A A V S pF pF pF ns ns ns ns V ns VGS = 6.5 V, VDS = 0 VDS = 25 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 4 V*3 ID = 5 A, VGS = 2.5 V*3 ID = 5 A, VDS = 10 V*3 Body to drain diode reverse recovery time Note: 3. Pulse Test Rev.2.00 Sep 07, 2005 page 2 of 7 trr VDS = 10 V, VGS = 0, f = 1 MHz ID = 5 A, VGS = 4 V, RL = 2 IF = 10 A, VGS = 0 IF = 10 A, VGS = 0, diF / dt = 20 A / s 2SK2329(L), 2SK2329(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 100 Drain Current ID (A) 30 20 10 20 DC 10 5 16 100 150 200 2 1m =1 0m era s( tio n( s s Tc 1s ho =2 t) 5 C) 1 0.5 Ta = 25C 1 2 5 10 20 50 Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 20 10 V 5V 4V 2.5 V 2V 8 VGS = 1.5 V 4 2 4 6 8 VDS = 10 V Pulse Test 16 12 8 Tc = 75C 25C 4 -25C 0 10 1 2 3 5 4 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 1.0 Pulse Test 0.8 0.6 0.4 ID = 10 A 0.2 0 Op 0 Case Temperature TC (C) 12 0 PW Operation in this area is limited by RDS(on) 0.1 0.5 Drain Current ID (A) Drain Current ID (A) 20 50 s 10 0.2 0 Drain to Source Saturation Voltage VDS (on) (V) 10 50 5A 2A 2 4 6 8 10 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 7 Static Drain to Source on State Resistance RDS (on) () Channel Dissipation Pch (W) 40 1 Pulse Test 0.5 0.2 0.1 VGS = 2.5 V 0.05 4V 0.02 0.01 0.1 0.2 0.5 1 2 5 10 20 Drain Current ID (A) 50 100 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) () 2SK2329(L), 2SK2329(S) 0.10 Pulse Test 0.08 ID = 2 A, 5 A, 10 A 0.06 2.5 V 0.04 2 A, 5 A, 10 A VGS = 4 V 0.02 0 -40 0 40 80 120 160 Tc = -25C 10 25C 75C 5 2 1 0.5 0.1 VDS = 10 V Pulse Test 0.3 1 3 10 30 Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 100 5000 VGS = 0 f = 1 MHz Capacitance C (pF) 500 200 100 50 10 0.2 0.5 1 2 5 Ciss 1000 Coss 500 200 Crss 50 10 0 20 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 80 16 VDD = 10 V 25 V 60 12 VGS ID = 10 A 40 8 VDS 20 4 VDD = 25 V 10 V 20 40 60 80 Gate Charge Qg (nc) Rev.2.00 Sep 07, 2005 page 4 of 7 0 100 1000 VGS = 4 V, VDD = 10 V 500 PW = 3 s, duty < 1 % Switching Time t (ns) 100 0 2000 100 di/dt = 20 A/s VGS = 0, Ta = 25C 20 Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) 20 Case Temperature TC (C) 1000 Drain to Source Voltage VDS (V) 50 td(off) 200 tf 100 tr 50 td(on) 20 10 0.2 0.5 1 2 5 Drain Current ID (A) 10 20 2SK2329(L), 2SK2329(S) Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test 16 12 VGS = 0, -5 V 8 5V 4 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C D=1 1 0.5 0.3 0.2 0.1 0.05 0.1 ch - c(t) = s (t) * ch - c ch - c = 6.25C/W, Tc = 25C 0.02 1 0.0 0.03 t ho lse PDM Pu D= 1s PW T PW T 0.01 10 100 1m 100 m 10 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Waveforms Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vout Vin 4V 50 10% 10% 10% VDD = 10 V 90% td(on) Rev.2.00 Sep 07, 2005 page 5 of 7 tr 90% td(off) tf 2SK2329(L), 2SK2329(S) Package Dimensions RENESAS Code Package Name MASS[Typ.] PRSS0004ZD-B DPAK(L)-(2) / DPAK(L)-(2)V 0.42g Unit: mm 1.7 0.5 JEITA Package Code 2.3 0.2 0.55 0.1 1.2 0.3 16.2 0.5 3.1 0.5 1.15 0.1 0.8 0.1 (0.7) 4.7 0.5 5.5 0.5 6.5 0.5 5.4 0.5 0.55 0.1 0.55 0.1 2.29 0.5 2.29 0.5 RENESAS Code Package Name MASS[Typ.] SC-63 PRSS0004ZD-C DPAK(S) / DPAK(S)V 0.28g 6.5 0.5 5.4 0.5 (0.1) Unit: mm 2.3 0.2 0.55 0.1 0 - 0.25 2.5 0.5 (1.2) 1.0 Max. 2.29 0.5 Rev.2.00 Sep 07, 2005 page 6 of 7 (5.1) (5.1) (0.1) 1.2 Max 5.5 0.5 1.5 0.5 JEITA Package Code 0.8 0.1 2.29 0.5 0.55 0.1 2SK2329(L), 2SK2329(S) Ordering Information Part Name 2SK3239L-E 2SK3239STL-E Quantity 3000 pcs 3000 pcs Shipping Container Box (Sack) Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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