Technische Information / Technical Information IGBT-Module IGBT-Modules BSM600GA120DLC S Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Tvj = 25C VCES 1200 V TC = 80 C IC,nom. 600 A TC = 25 C IC 900 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80C ICRM 1200 A Gesamt-Verlustleistung total power dissipation TC=25C, Transistor Ptot 3900 W VGES +/- 20V V IF 600 A IFRM 1200 A I t 2 74 kA s VISOL 2,5 kV Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode 2 I t - value, Diode VR = 0V, t p = 10ms, T Vj = 125C Isolations-Prufspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. 2 Charakteristische Werte / Characteristic values min. typ. max. - 2,1 2,6 V - 2,4 2,9 V VGE(th) 4,5 5,5 6,5 V Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage IC = 600A, V GE = 15V, Tvj = 25C VCE sat IC = 600A, V GE = 15V, Tvj = 125C Gate-Schwellenspannung gate threshold voltage IC = 24mA, V CE = VGE, Tvj = 25C Gateladung gate charge VGE = -15V...+15V QG - 6,4 - C Eingangskapazitat input capacitance f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V Cies - 44 - nF Ruckwirkungskapazitat reverse transfer capacitance f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V Cres - 2,8 - nF Kollektor-Emitter Reststrom collector-emitter cut-off current VGE= 0V, Tvj= 25C, V CE= 1200V ICES - - 5 mA Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, V GE = 20V, Tvj = 25C IGES - - 400 nA prepared by: MOD-D2; Martin Knecht date of publication: 2003-01-29 approved by: SM TM; Wilhelm Rusche revision: 3.0 1(8) DB_BSM600GA120DLCS_3.0 2003-01-29 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM600GA120DLC S Charakteristische Werte / Characteristic values min. Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) VGE = 15V, R G = 3,0, Tvj = 25C td,on VGE = 15V, R G = 3,0, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) tr td,off VGE = 15V, R G = 3,0, Tvj = 25C Einschaltverlustenergie pro Puls turn-on energy loss per pulse IC = 600A, V CC = 600V, V GE = 15V Abschaltverlustenergie pro Puls turn-off energy loss per pulse IC = 600A, V CC = 600V, V GE = 15V RG = 3,0, Tvj = 125C, L = 55nH RG = 3,0, Tvj = 125C, L = 55nH - s - s - 0,09 - s - 0,10 - s - 0,54 - s - 0,59 - s tf - 0,06 - s - 0,09 - s Eon - 58 - mJ Eoff - 104 - mJ ISC - 3600 - A LCE - 16 - nH RCC`+EE` - 0,50 - m min. typ. max. tP 10s, V GE 15V, R G = 3,0 TVj125C, V CC=900V, V CEmax=VCES -LCE *di/dt Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip 0,09 0,09 IC = 600A, V CC = 600V VGE = 15V, R G = 3,0, Tvj = 125C Kurzschluverhalten SC Data - IC = 600A, V CC = 600V VGE = 15V, R G = 3,0, Tvj = 25C VGE = 15V, R G = 3,0, Tvj = 125C Fallzeit (induktive Last) fall time (inductive load) max. IC = 600A, V CC = 600V VGE = 15V, R G = 3,0, Tvj = 25C VGE = 15V, R G = 3,0, Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) typ. IC = 600A, V CC = 600V TC= 25C Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage IF = 600A, V GE = 0V, Tvj = 25C Ruckstromspitze peak reverse recovery current IF = 600A, - di F/dt = 6200A/s VF IF = 600A, V GE = 0V, Tvj = 125C VR = 600V, V GE = -15V, Tvj = 25C IRM VR = 600V, V GE = -15V, Tvj = 125C Sperrverzogerungsladung recovered charge 1,8 2,3 V 1,7 2,2 V - 500 - A - 670 - A IF = 600A, - di F/dt = 6200A/s VR = 600V, V GE = -15V, Tvj = 25C Qr VR = 600V, V GE = -15V, Tvj = 125C Abschaltenergie pro Puls reverse recovery energy - - 58 - C - 120 - C - 22 - mJ - 50 - mJ IF = 600A, - di F/dt = 6200A/s VR = 600V, V GE = -15V, Tvj = 25C VR = 600V, V GE = -15V, Tvj = 125C 2(8) Erec DB_BSM600GA120DLCS_3.0 2003-01-29 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM600GA120DLC S Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,032 K/W - - 0,050 K/W RthCK - 0,010 - K/W Hochstzulassige Sperrschichttemperatur maximum junction temperature Tvj max - - 150 C Betriebstemperatur operation temperature Tvj op -40 - 125 C Lagertemperatur storage temperature Tstg -40 - 125 C Innerer Warmewiderstand thermal resistance, junction to case pro Transistor / per transistor, DC Ubergangs-Warmewiderstand thermal resistance, case to heatsink pro Modul / per module Paste = 1 W/m * K / grease = 1 W/m * K RthJC pro Diode / per Diode, DC Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation Al2O3 Kriechstrecke creepage distance 20 mm Luftstrecke clearance distance 11 mm CTI comperative tracking index 425 Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Schraube / screw M6 M Anschlusse / terminals M6 M Anschlusse / terminals M4 Gewicht weight 3,0 - 6,0 Nm 2,5 - 5,0 Nm 1,1 - 2,0 Nm G 340 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) DB_BSM600GA120DLCS_3.0 2003-01-29 Technische Information / Technical Information BSM600GA120DLC S IGBT-Module IGBT-Modules Ausgangskennlinie (typisch) Output characteristic (typical) IC = f (VCE) V GE = 15V 1200 1100 1000 Tvj = 25C 900 Tvj = 125C IC [A] 800 700 600 500 400 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) IC = f (VCE) T vj = 125C 1200 1100 1000 900 VGE = 17V IC [A] 800 VGE = 15V VGE = 13V 700 VGE = 11V 600 VGE = 9V VGE = 7V 500 400 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4(8) DB_BSM600GA120DLCS_3.0 2003-01-29 Technische Information / Technical Information BSM600GA120DLC S IGBT-Module IGBT-Modules Ubertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 20V 1200 1100 1000 Tvj = 25C 900 Tvj = 125C IC [A] 800 700 600 500 400 300 200 100 0 5 6 7 8 9 10 11 12 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) IF = f (VF) 1200 1100 1000 Tvj = 25C 900 Tvj = 125C IF [A] 800 700 600 500 400 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 VF [V] 5(8) DB_BSM600GA120DLCS_3.0 2003-01-29 Technische Information / Technical Information BSM600GA120DLC S IGBT-Module IGBT-Modules Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) VGE=15V, RG = 3,0 , VCE = 600V, Tvj = 125C 240 Eoff 200 Eon Erec E [mJ] 160 120 80 40 0 0 200 400 600 800 1000 1200 IC [A] Schaltverluste (typisch) Switching losses (typical) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=15V , I C = 600A , V CE = 600V , T vj = 125C 500 450 Eoff 400 Eon Erec E [mJ] 350 300 250 200 150 100 50 0 0 3 6 9 12 15 18 21 24 27 30 RG [] 6(8) DB_BSM600GA120DLCS_3.0 2003-01-29 Technische Information / Technical Information BSM600GA120DLC S IGBT-Module IGBT-Modules Transienter Warmewiderstand Transient thermal impedance ZthJC = f (t) 0,01 Zth:Diode Zth:IGBT 0,001 0,001 0,01 0,1 1 10 t [s] i ri [K/kW] : IGBT i [s] : IGBT ri [K/kW] : Diode i [s] : Diode 1 2 3 4 3,58 10,83 14,11 3,48 0,002 0,03 0,066 1,655 6,54 17,33 18,91 7,22 0,002 0,03 0,072 0,682 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) VGE = 15V, R G = 3,0 , T vj= 125C 1400 1200 1000 IC [A] ZthJC [K / W] 0,1 800 IC,Modul IC,Chip 600 400 200 0 0 200 400 600 800 1000 1200 1400 VCE [V] 7(8) DB_BSM600GA120DLCS_3.0 2003-01-29 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM600GA120DLC S Gehausemae / Schaltbild Package outline / Circuit diagram 8(8) DB_BSM600GA120DLCS_3.0 2003-01-29