BSM600GA120DLCS - Eupec Power Semiconductors

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM600GA120DLC S

Höchstzulässige Werte / Maximum rated values

Elektrische Eigenschaften / Electrical properties

Kollektor-Emitter-Sperrspannung

collector-emitter voltage Tvj = 25°C VCES 1200 V

Kollektor-Dauergleichstrom TC = 80 °C IC,nom. 600 A

DC-collector current TC = 25 °C IC900 A

Periodischer Kollektor Spitzenstrom

repetitive peak collector current tP = 1 ms, TC = 80°C ICRM 1200 A

Gesamt-Verlustleistung

total power dissipation TC=25°C, Transistor Ptot 3900 W

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage VGES +/- 20V V

Dauergleichstrom

DC forward current IF600 A

Periodischer Spitzenstrom

repetitive peak forw. current tP = 1 ms IFRM 1200 A

Grenzlastintegral der Diode

I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125°C I2t74 k A2s

Isolations-Prüfspannung

insulation test voltage RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV

Charakteristische Werte / Characteristic values

Transistor / Transistor min. typ. max.

Kollektor-Emitter Sättigungsspannung IC = 600A, VGE = 15V, Tvj = 25°C VCE sat - 2,1 2,6 V

collector-emitter saturation voltage IC = 600A, VGE = 15V, Tvj = 125°C - 2,4 2,9 V

Gate-Schwellenspannung

gate threshold voltage IC = 24mA, VCE = VGE, Tvj = 25°C VGE(th) 4,5 5,5 6,5 V

Gateladung

gate charge VGE = -15V...+15V QG- 6,4 - µC

Eingangskapazität

input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cies -44-nF

Rückwirkungskapazität

reverse transfer capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cres - 2,8 - nF

Kollektor-Emitter Reststrom

collector-emitter cut-off current

Gate-Emitter Reststrom

gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C IGES - - 400 nA

prepared by: MOD-D2; Martin Knecht date of publication: 2003-01-29

approved by: SM TM; Wilhelm Rusche revision: 3.0

VGE= 0V, Tvj= 25°C, VCE= 1200V ICES - - 5 mA

1(8)

DB_BSM600GA120DLCS_3.0

2003-01-29

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM600GA120DLC S

Charakteristische Werte / Characteristic values

Transistor / Transistor min. typ. max.

Einschaltverzögerungszeit (ind. Last) IC = 600A, VCC = 600V

turn on delay time (inductive load) VGE = ±15V, RG = 3,0Ω, Tvj = 25°C td,on - 0,09 - µs

VGE = ±15V, RG = 3,0Ω, Tvj = 125°C - 0,09 - µs

Anstiegszeit (induktive Last) IC = 600A, VCC = 600V

rise time (inductive load) VGE = ±15V, RG = 3,0Ω, Tvj = 25°C tr- 0,09 - µs

VGE = ±15V, RG = 3,0Ω, Tvj = 125°C - 0,10 - µs

Abschaltverzögerungszeit (ind. Last) IC = 600A, VCC = 600V

turn off delay time (inductive load) VGE = ±15V, RG = 3,0Ω, Tvj = 25°C td,off - 0,54 - µs

VGE = ±15V, RG = 3,0Ω, Tvj = 125°C - 0,59 - µs

Fallzeit (induktive Last) IC = 600A, VCC = 600V

fall time (inductive load) VGE = ±15V, RG = 3,0Ω, Tvj = 25°C tf- 0,06 - µs

VGE = ±15V, RG = 3,0Ω, Tvj = 125°C - 0,09 - µs

Einschaltverlustenergie pro Puls IC = 600A, VCC = 600V, VGE = ±15V

turn-on energy loss per pulse RG = 3,0Ω, Tvj = 125°C, Lσ = 55nH Eon -58-mJ

Abschaltverlustenergie pro Puls IC = 600A, VCC = 600V, VGE = ±15V

turn-off energy loss per pulse RG = 3,0Ω, Tvj = 125°C, Lσ = 55nH Eoff - 104 - mJ

Kurzschlußverhalten tP ≤ 10µs, VGE ≤ 15V, RG = 3,0Ω

SC Data TVj≤125°C, VCC=900V, VCEmax=VCES -LσCE ·di/dt ISC - 3600 - A

Modulinduktivität

stray inductance module LσCE - 16 - nH

Modul Leitungswiderstand, Anschlüsse – Chip

module lead resistance, terminals – chip TC= 25°C RCC‘+EE‘ - 0,50 - mΩ

Charakteristische Werte / Characteristic values

Diode / Diode min. typ. max.

Durchlaßspannung IF = 600A, VGE = 0V, Tvj = 25°C VF- 1,8 2,3 V

forward voltage IF = 600A, VGE = 0V, Tvj = 125°C - 1,7 2,2 V

Rückstromspitze IF = 600A, - diF/dt = 6200A/µs

peak reverse recovery current VR = 600V, VGE = -15V, Tvj = 25°C IRM - 500 - A

VR = 600V, VGE = -15V, Tvj = 125°C - 670 - A

Sperrverzögerungsladung IF = 600A, - diF/dt = 6200A/µs

recovered charge VR = 600V, VGE = -15V, Tvj = 25°C -58-µC

VR = 600V, VGE = -15V, Tvj = 125°C - 120 - µC

Abschaltenergie pro Puls IF = 600A, - diF/dt = 6200A/µs

reverse recovery energy VR = 600V, VGE = -15V, Tvj = 25°C -22-mJ

VR = 600V, VGE = -15V, Tvj = 125°C -50-mJ

Erec

2(8)

DB_BSM600GA120DLCS_3.0

2003-01-29

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM600GA120DLC S

Thermische Eigenschaften / Thermal properties

min. typ. max.

Innerer Wärmewiderstand pro Transistor / per transistor, DC RthJC - - 0,032 K/W

thermal resistance, junction to case pro Diode / per Diode, DC - - 0,050 K/W

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink

pro Modul / per module

λPaste = 1 W/m * K / λgrease = 1 W/m * K RthCK - 0,010 - K/W

Höchstzulässige Sperrschichttemperatur

maximum junction temperature Tvj max - - 150 °C

Betriebstemperatur

operation temperature Tvj op -40 - 125 °C

Lagertemperatur

storage temperature Tstg -40 - 125 °C

Mechanische Eigenschaften / Mechanical properties

Gehäuse, siehe Anlage

case, see appendix

Innere Isolation

internal insulation Al2O3

Kriechstrecke

creepage distance 20 mm

Luftstrecke

clearance distance 11 mm

CTI

comperative tracking index 425

Anzugsdrehmoment f. mech. Befestigung

mounting torque

Anzugsdrehmoment f. elektr. Anschlüsse Anschlüsse / terminals M6 2,5 - 5,0 Nm

terminal connection torque Anschlüsse / terminals M4 1,1 - 2,0 Nm

Gewicht

weight G 340 g

Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.

Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.

This technical information specifies semiconductor devices but promises no characteristics. It is

valid in combination with the belonging technical notes.

Schraube / screw M6 M 3,0

- 6,0 Nm

3(8)

DB_BSM600GA120DLCS_3.0

2003-01-29

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM600GA120DLC S

IC [A]

VCE [V]

IC [A]

VCE [V]

100

200

300

400

500

600

700

800

900

1000

1100

1200

0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5

Tvj = 25°C

Tvj = 125°C

Ausgangskennlinie (typisch) IC = f (VCE)

Output characteristic (typical) VGE = 15V

100

200

300

400

500

600

700

800

900

1000

1100

1200

0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0

VGE = 17V

VGE = 15V

VGE = 13V

VGE = 11V

VGE = 9V

VGE = 7V

Ausgangskennlinienfeld (typisch) IC = f (VCE)

Output characteristic (typical) Tvj = 125°C

4(8)

DB_BSM600GA120DLCS_3.0

2003-01-29

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM600GA120DLC S

IC [A]

VGE [V]

IF [A]

VF [V]

100

200

300

400

500

600

700

800

900

1000

1100

1200

5 6 7 8 9 10 11 12

Tvj = 25°C

Tvj = 125°C

Übertragungscharakteristik (typisch) IC = f (VGE)

Transfer characteristic (typical) VCE = 20V

100

200

300

400

500

600

700

800

900

1000

1100

1200

0,0 0,5 1,0 1,5 2,0 2,5

Tvj = 25°C

Tvj = 125°C

Durchlaßkennlinie der Inversdiode (typisch) IF = f (VF)

Forward characteristic of inverse diode (typical)

5(8)

DB_BSM600GA120DLCS_3.0

2003-01-29

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM600GA120DLC S

E [mJ]

IC [A]

E [mJ]

RG [Ω]

120

160

200

240

0 200 400 600 800 1000 1200

Eoff

Eon

Erec

Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)

Switching losses (typical) VGE=±15V, RG = 3,0 Ω, VCE = 600V, Tvj = 125°C

100

150

200

250

300

350

400

450

500

0 3 6 9 12 15 18 21 24 27 30

Eoff

Eon

Erec

Schaltverluste (typisch) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)

Switching losses (typical) VGE=±15V , IC = 600A , VCE = 600V , Tvj = 125°C

6(8)

DB_BSM600GA120DLCS_3.0

2003-01-29

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM600GA120DLC S

ZthJC

[K / W]

i 1234

ri [K/kW] : IGBT 3,58 10,83 14,11 3,48

i [s] : IGBT 0,002 0,03 0,066 1,655

i [K/kW] : Diode 6,54 17,33 18,91 7,22

i [s] : Diode 0,002 0,03 0,072 0,682

IC [A]

t [s]

VCE [V]

Sicherer Arbeitsbereich (RBSOA)

Reverse bias safe operation area (RBSOA) VGE = ±15V, RG = 3,0 Ω, Tvj= 125°C

Transienter Wärmewiderstand ZthJC = f (t)

Transient thermal impedance

200

400

600

800

1000

1200

1400

0 200 400 600 800 1000 1200 1400

IC,Modul

IC,Chip

0,001

0,01

0,1

0,001 0,01 0,1 1 10

Zth:Diode

Zth:IGBT

7(8)

DB_BSM600GA120DLCS_3.0

2003-01-29

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM600GA120DLC S

Gehäusemaße / Schaltbild

Package outline / Circuit diagram

8(8)

DB_BSM600GA120DLCS_3.0

2003-01-29