2
LND150
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
Electrical Characteristics (TA = 25OC unless otherwise specified)
Sym Parameter Min Typ Max Units Conditions
BVDSX Drain-to-source breakdown voltage 500 - - V VGS = -10V, ID = 1.0mA
VGS(OFF) Gate-to-source off voltage -1.0 - -3.0 V VGS = 25V, ID = 100nA
ΔVGS(OFF) Change in VGS(OFF) with temperature - - 5.0 mV/OC VGS = 25V, ID = 100nA
IGSS Gate body leakage current - - 100 nA VGS = ± 20V, VDS = 0V
ID(OFF) Drain-to-source leakage current
- - 100 nA VGS = -10V, VDS = 450V
- - 100 µA VDS = 0.8V Max Rating,
VGS = -10V, TA = 125OC
IDSS Saturated drain-to-source current 1.0 - 3.0 mA VGS = 0V, VDS = 25V
RDS(ON) Static drain-to-source on-state resistance - 850 1000 Ω VGS = 0V, ID = 0.5mA
ΔRDS(ON) Change in RDS(ON) with temperature - - 1.2 %/OC VGS = 0V, ID = 0.5mA
GFS Forward transductance 1.0 2.0 - m VDS = 0V, ID = 1.0mA
CISS Input capacitance - 7.5 10
pF
VGS = -10V,
VDS = 25V,
f = 1.0MHz
COSS Common source output capacitance - 2.0 3.5
CRSS Reverse transfer capacitance - 0.5 1.0
td(ON) Turn-on delay time - 0.09 -
µs
VDD = 25V,
ID = 1.0mA,
RGEN = 25Ω
trRise time - 0.45 -
td(OFF) Turn-off delay time - 0.1 -
tfFall time - 1.3 -
VSD Diode forward voltage drop - - 0.9 V VGS = -10V, ISD = 1.0mA
trr Reverse recovery time - 200 - ns VGS = -10V, ISD = 1.0mA
Notes:
All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
All A.C. parameters sample tested.
1.
2.
Notes:
† ID (continuous) is limited by max rated Tj.
‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm
Thermal Characteristics
Package
ID
(continuous)†
(mA)
ID
(pulsed)
(mA)
Power Dissipation
@TA = 25OC
(W)
θjc
(OC/W)
θja
(OC/W)
IDR
(mA)
IDRM
†
(mA)
TO-236AB (SOT-23) 13 30 0.36 200 350 13 30
TO-92 30 30 0.74 125 170 30 30
TO-243AA (SOT-89) 30 30 1.6‡15 78 30 30
Switching Waveforms and Test Circuit
90%
10%
90% 90%
10%
10%
PULSE
GENERATOR
V
DD
RL
OUTPUT
D.U.T.
t(ON)
td(ON)
t(OFF)
td(OFF) tf
tr
INPUT
INPUT
OUTPUT
0V
VDD
RGEN
0V
-10V
Ω